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RFD16N价格

参考价格：￥2.5912

型号：RFD16N05LSM9A 品牌：Fairchild 备注：这里有RFD16N多少钱，2025年最近7天走势，今日出价，今日竞价，RFD16N批发/采购报价，RFD16N行情走势销售排行榜，RFD16N报价。

型号	功能描述	生产厂家企业	LOGO
RFD16N02	16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET Description The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applica	Intersil	Intersil
RFD16N02L	16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET Description The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applica	Intersil	Intersil
RFD16N02L	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 20V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFD16N02LSM	16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET Description The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applica	Intersil	Intersil
RFD16N02LSM	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 20V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFD16N03	16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s	Fairchild 仙童半导体	Fairchild
RFD16N03	16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s	Intersil	Intersil
RFD16N03L	16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s	Fairchild 仙童半导体	Fairchild
RFD16N03L	16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s	Intersil	Intersil
RFD16N03L	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFD16N03LSM	16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s	Fairchild 仙童半导体	Fairchild
RFD16N03LSM	16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s	Intersil	Intersil
RFD16N03LSM	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFD16N05	16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in application	Fairchild 仙童半导体	Fairchild
RFD16N05	16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri	Intersil	Intersil
RFD16N05	16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in application	Intersil	Intersil
RFD16N05	60V N-Channel MOSFET Features VDS (V) =60V RDS(ON)	UMW 友台半导体	UMW
RFD16N05L	16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri	Fairchild 仙童半导体	Fairchild
RFD16N05L	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFD16N05L	16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri	Intersil	Intersil
RFD16N05LSM	16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri	Intersil	Intersil
RFD16N05LSM	16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri	Fairchild 仙童半导体	Fairchild
RFD16N05LSM	N-Channel Logic Level Power MOSFET 50V, 16A, 47 m廓 These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri	Fairchild 仙童半导体	Fairchild
RFD16N05LSM	MOSFET - Power, N-Channel, Logic Level 50 V, 16 A, 47 m These are N−Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5 V	ONSEMI 安森美半导体	ONSEMI
RFD16N05LSM	N-channel Enhancement Mode Power MOSFET Features  VDS= 60V, ID= 30A RDS(ON)	Bychip 百域芯	Bychip
RFD16N05LSM	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFD16N05LSM9A	N-Channel Logic Level Power MOSFET 50V, 16A, 47 m廓 These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri	Fairchild 仙童半导体	Fairchild
RFD16N05LSM9A	MOSFET - Power, N-Channel, Logic Level 50 V, 16 A, 47 m These are N−Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5 V	ONSEMI 安森美半导体	ONSEMI
RFD16N05LSM9A	60V N-Channel MOSFET Features VDS (V) =60V RDS(ON)	UMW 友台半导体	UMW
RFD16N05LSM9A	N-channel Enhancement Mode Power MOSFET Features VDS= 60V, ID= 30A RDS(ON)	Bychip 百域芯	Bychip
RFD16N05SM	16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in application	Fairchild 仙童半导体	Fairchild
RFD16N05SM	16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in application	Intersil	Intersil
RFD16N05SM	N-channel Enhancement Mode Power MOSFET Features  VDS= 60V, ID= 30A RDS(ON)	Bychip 百域芯	Bychip
RFD16N05SM	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFD16N05SM9A	N-channel Enhancement Mode Power MOSFET Features  VDS= 60V, ID= 30A RDS(ON)	Bychip 百域芯	Bychip
RFD16N06	16A, 60V, 0.047 Ohm, N-Channel Power MOSFET Description These N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as	Intersil	Intersil
RFD16N06	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFD16N06LE	16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. Features • 16A, 60V • rDS(ON) = 0.047Ω • Temperature Compensati	Intersil	Intersil
RFD16N06LE	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFD16N06LESM	16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. Features • 16A, 60V • rDS(ON) = 0.047Ω • Temperature Compensati	Fairchild 仙童半导体	Fairchild
RFD16N06LESM	16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. Features • 16A, 60V • rDS(ON) = 0.047Ω • Temperature Compensati	Intersil	Intersil
RFD16N06LESM	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFD16N06SM	16A, 60V, 0.047 Ohm, N-Channel Power MOSFET Description These N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as	Intersil	Intersil
RFD16N06SM	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFD16N02	N-Channel 30-V (D-S) MOSFET 文件：959.96 Kbytes Page：8 Pages	VBSEMI 微碧半导体	VBSEMI
RFD16N03	N-Channel 30-V (D-S) MOSFET 文件：959.98 Kbytes Page：8 Pages	VBSEMI 微碧半导体	VBSEMI
RFD16N03	16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs	ONSEMI 安森美半导体	ONSEMI
RFD16N03	16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs	RENESAS 瑞萨	RENESAS
RFD16N05	16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs	RENESAS 瑞萨	RENESAS
RFD16N05	16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs 文件：226.37 Kbytes Page：8 Pages	Fairchild 仙童半导体	Fairchild
RFD16N05_03	16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs 文件：226.37 Kbytes Page：8 Pages	Fairchild 仙童半导体	Fairchild
RFD16N05LSM	N-Channel 60-V (D-S) MOSFET 文件：897.13 Kbytes Page：6 Pages	VBSEMI 微碧半导体	VBSEMI
RFD16N05LSM9A	N-Channel 6 0-V (D-S) MOSFET 文件：896.98 Kbytes Page：6 Pages	VBSEMI 微碧半导体	VBSEMI
RFD16N05LSM-NL	N-Channel 60-V (D-S) MOSFET 文件：898.21 Kbytes Page：6 Pages	VBSEMI 微碧半导体	VBSEMI
RFD16N05SM	16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs 文件：226.37 Kbytes Page：8 Pages	Fairchild 仙童半导体	Fairchild
RFD16N05SM	N-Channel 6 0-V (D-S) MOSFET 文件：897.27 Kbytes Page：6 Pages	VBSEMI 微碧半导体	VBSEMI
RFD16N06	N-Channel 60 V (D-S) MOSFET 文件：960.51 Kbytes Page：7 Pages	VBSEMI 微碧半导体	VBSEMI
RFD16N06LESM	N-Channel 6 0-V (D-S) MOSFET 文件：897.91 Kbytes Page：6 Pages	VBSEMI 微碧半导体	VBSEMI

RFD16N产品属性

类型
描述
型号
RFD16N
制造商
Rochester Electronics LLC
功能描述
- Bulk

RFD16N供应商更多...

更新时间：2025-12-23 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	RFD16N02LSM	FAIRCHILD/仙童	24+	NA/	1000	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市金芯世纪电子有限公司	RFD16N02LSM	INTERSIL	22+	TO-252	100000	代理渠道/只做原装/可含税	询价
深圳市拓亿芯电子有限公司	RFD16N03LSM	FAIRCHILD	25+	TO252	30000	代理全新原装现货,价格优势	询价
深圳市赛美科科技有限公司	RFD16N03	FAIRCHILD		SOT-252	68500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市赛尔通科技有限公司	RFD16N02L	INTERSIL	23+		65480		询价
贸泽芯城（深圳）电子科技有限公司	RFD16N03L	INTERSIL	23+	TO251AA	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价
深圳市一线半导体有限公司	RFD16N02LSM	FAIRCHILD	24+	TO-252	36800		询价
深圳市宏捷佳电子科技有限公司	RFD16N02LSM	INTERSIL	2023+	TO-252	50000	原装现货	询价
深圳市安富世纪电子有限公司	RFD16N02LSM9A	FAIRCHILD/仙童	23+	SOT252	8000	只做原装现货	询价
艾睿（深圳）半导体有限公司	RFD16N02LSM	FAIRCHILD/仙童	2447	SOT252	100500	一级代理专营品牌!原装正品,优势现货,长期排单到货	询价

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RFD16N价格

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RFD16N供应商更多...

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RFDIP160806BLM6T25信号调节

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DdatasheetPDF页码索引