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RFD16N价格
参考价格：￥2.5912
型号：RFD16N05LSM9A 品牌：Fairchild 备注：这里有RFD16N多少钱，2025年最近7天走势，今日出价，今日竞价，RFD16N批发/采购报价，RFD16N行情走势销售排行榜，RFD16N报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET Description TheRFD16N02LandRFD16N02LSMareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplica | Intersil Intersil Corporation |  |   | |
16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET Description TheRFD16N02LandRFD16N02LSMareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplica | Intersil Intersil Corporation | | | |
16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET Description TheRFD16N02LandRFD16N02LSMareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplica | Intersil Intersil Corporation | | | |
16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregulators,s | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregulators,s | Intersil Intersil Corporation | | | |
16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregulators,s | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregulators,s | Intersil Intersil Corporation | | | |
16A, 30V, Avalanche Rated N-Channel Logic Level Enhancement-Mode Power MOSFETs TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregulators,s | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
16A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFETs TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregulators,s | Intersil Intersil Corporation | | | |
60V N-Channel MOSFET Features VDS(V)=60V RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 |  | | |
16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri | Intersil Intersil Corporation | | | |
16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication | Intersil Intersil Corporation | | | |
16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri | Intersil Intersil Corporation | | | |
16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri | Intersil Intersil Corporation | | | |
16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-Channel Logic Level Power MOSFET 50V, 16A, 47 m廓 TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-channel Enhancement Mode Power MOSFET Features VDS=60V,ID=30A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 |  | | |
MOSFET - Power, N-Channel, Logic Level 50 V, 16 A, 47 m TheseareN−ChannellogiclevelpowerMOSFETsmanufactured usingtheMegaFETprocess.Thisprocess,whichusesfeaturesizes approachingthoseofLSIintegratedcircuitsgivesoptimumutilization ofsilicon,resultinginoutstandingperformance.Theyweredesigned forusewithlogiclevel(5V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
N-Channel Logic Level Power MOSFET 50V, 16A, 47 m廓 TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
MOSFET - Power, N-Channel, Logic Level 50 V, 16 A, 47 m TheseareN−ChannellogiclevelpowerMOSFETsmanufactured usingtheMegaFETprocess.Thisprocess,whichusesfeaturesizes approachingthoseofLSIintegratedcircuitsgivesoptimumutilization ofsilicon,resultinginoutstandingperformance.Theyweredesigned forusewithlogiclevel(5V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
60V N-Channel MOSFET Features VDS(V)=60V RDS(ON) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | | | |
N-channel Enhancement Mode Power MOSFET Features VDS=60V,ID=30A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | | | |
16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication | Intersil Intersil Corporation | | | |
N-channel Enhancement Mode Power MOSFET Features VDS=60V,ID=30A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | | | |
N-channel Enhancement Mode Power MOSFET Features VDS=60V,ID=30A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | | | |
16A, 60V, 0.047 Ohm, N-Channel Power MOSFET Description TheseN-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.ThisprocesswhichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas | Intersil Intersil Corporation | | | |
16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs TheseareN-ChannelpowerMOSFETsmanufacturedusingamodernprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance. Features •16A,60V •rDS(ON)=0.047Ω •TemperatureCompensati | Intersil Intersil Corporation | | | |
16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs TheseareN-ChannelpowerMOSFETsmanufacturedusingamodernprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance. Features •16A,60V •rDS(ON)=0.047Ω •TemperatureCompensati | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs TheseareN-ChannelpowerMOSFETsmanufacturedusingamodernprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance. Features •16A,60V •rDS(ON)=0.047Ω •TemperatureCompensati | Intersil Intersil Corporation | | | |
16A, 60V, 0.047 Ohm, N-Channel Power MOSFET Description TheseN-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.ThisprocesswhichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas | Intersil Intersil Corporation | | | |
N-Channel 30-V (D-S) MOSFET 文件：959.96 Kbytes Page：8 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
N-Channel 30-V (D-S) MOSFET 文件：959.98 Kbytes Page：8 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs 文件：226.37 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs 文件：226.37 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-Channel 60-V (D-S) MOSFET 文件：897.13 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-Channel 6 0-V (D-S) MOSFET 文件：896.98 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-Channel 60-V (D-S) MOSFET 文件：898.21 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs 文件：226.37 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-Channel 6 0-V (D-S) MOSFET 文件：897.27 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-Channel 60 V (D-S) MOSFET 文件：960.51 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-Channel 6 0-V (D-S) MOSFET 文件：897.91 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | | |
RFD16N产品属性
- 类型
描述
- 型号
RFD16N
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTERSIL |
23+ |
65480 |
|||||
FAIRCHILD |
SOT-252 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
FAIRCHILD |
24+ |
TO-252 |
36800 |
||||
FAIRCHILD/仙童 |
2447 |
SOT252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
INTERSIL |
2022+ |
TO-252 |
30000 |
进口原装现货供应,原装 假一罚十 |
|||
FAIRCHILD/仙童 |
23+ |
SOT252 |
8000 |
只做原装现货 |
|||
INTERSIL |
22+ |
TO-252 |
20000 |
保证原装正品,假一陪十 |
|||
FAIRCHILD/仙童 |
24+ |
NA/ |
1000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
FAIRCHILD/仙童 |
2022+ |
SOT252 |
42560 |
原厂代理 终端免费提供样品 |
|||
INTERSIL |
21+ |
9852 |
只做原装正品现货!或订货假一赔十! |
RFD16N芯片相关品牌
RFD16N规格书下载地址
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- RFC5K
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- RFC3311
- RFC3265
- RFC3264
- RFC3261
- RFC2K
- RFC2976
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只做原装正品，原包装标签欢迎咨询！
2021-6-10RFBLN0605040YM9T16深圳市光华微科技有限公司18138231376
联系人：刘冬英 电话：0755-83203002 手机：18138231376、18806643356 QQ号：1546282226、微信号：18138231376 公司名称：深圳市光华微科技有限公司 公司地址：深圳市福田区振兴路华匀大厦1栋712室
2019-8-15RFBLN0605040YM9T16深圳市光华微科技有限公司18138231376
联系人：刘冬英 电话：0755-83203002 手机：18138231376、18806643356 QQ号：1546282226、微信号：18138231376 公司名称：深圳市光华微科技有限公司 公司地址：深圳市福田区振兴路华匀大厦1栋712室
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RFDIP160806BLM6T25原装现货
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只做原装，假一罚十，可开16%增值税票。TE.NXP.ON.Renesas.Microchip.英飞凌.ALLEGRO
2019-3-14
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