16A, 60V, 0.047 Ohm, N-Channel Power MOSFET

Description These N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

16A, 60V, 0.047 Ohm, N-Channel Power MOSFET

N-Channel 60 V (D-S) MOSFET

文件：960.51 Kbytes Page：7 Pages

16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. Features • 16A, 60V • rDS(ON) = 0.047Ω • Temperature Compensati

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. Features • 16A, 60V • rDS(ON) = 0.047Ω • Temperature Compensati

16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. Features • 16A, 60V • rDS(ON) = 0.047Ω • Temperature Compensati

16A, 60V, 0.047 Ohm, N-Channel Power MOSFET

Description These N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N 沟道逻辑电平功率 MOSFET 60V，16A，47mΩ

N-Channel 6 0-V (D-S) MOSFET

文件：897.91 Kbytes Page：6 Pages

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 16mΩ ID 42A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 16mΩ ID 6.7A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 16mΩ ID 42A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 16mΩ ID 15A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

文件：230.07 Kbytes Page：5 Pages