16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET

Description The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applica

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 20V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET

Description The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applica

N-Channel 30-V (D-S) MOSFET

文件：959.96 Kbytes Page：8 Pages

16A, 20V, 0.022 Ohm, N-Channel, Logic Level, Power MOSFET

Description The RFD16N02L and RFD16N02LSM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applica

N-Channel 30-V (D-S) MOSFET

文件：960.01 Kbytes Page：8 Pages

20V N-Channel Enhancement Mode MOSFET

文件：995.53 Kbytes Page：7 Pages