16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in application

16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri

16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in application

丝印代码：16N05L；60V N-Channel MOSFET

Features VDS (V) =60V RDS(ON)

16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

文件：226.37 Kbytes Page：8 Pages

16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri

16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N 沟道逻辑电平功率 MOSFET 50V，16A，47mΩ

这些N沟道逻辑电平功率MOSFET使用MegaFET工艺制造。 这种工艺使用接近LSI集成电路的特征尺寸，优化了硅原料利用率，可以带来出色的性能。 这些器件设计用于逻辑电平(5V)驱动源，适用于可编程控制器、车用开关、开关稳压器、开关转换器、电机继电器驱动器和双极晶体管发射极开关等应用。 这种性能通过一个特殊的栅极氧化设计来实现，在栅极偏置范围为3V到5V时提供完整的额定电导，从而可以通过逻辑电路电源电压直接实现真正的开-关电源控制。 以前的开发类型为TA09871。 •16A, 50V\n•rDS(ON)= 0.047Ω\n•UIS SOA等级曲线（单脉冲）\n•针对5V栅极驱动优化的设计\n•可直接从CMOS、NMOS、TTL电路驱动\n•SOA为有限功耗\n•纳秒开关速度\n•线性传递特性\n•高输入阻抗\n•多数载流子器件\n•相关文献;

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

MOSFET - Power, N-Channel, Logic Level 50 V, 16 A, 47 m

These are N−Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5 V

16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri

16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri

N-Channel Logic Level Power MOSFET 50V, 16A, 47 m廓

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri

MOSFET - Power, N-Channel, Logic Level 50 V, 16 A, 47 m

These are N−Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5 V

丝印代码：16N05L；60V N-Channel MOSFET

Features VDS (V) =60V RDS(ON)

N-Channel Logic Level Power MOSFET 50V, 16A, 47 m廓

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri

N-channel Enhancement Mode Power MOSFET

Features VDS= 60V, ID= 30A RDS(ON)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N 沟道，功率 MOSFET，50V，16A，47mΩ

RFD16N05和RFD16N05SM N沟道MOSFET是利用MegaFET工艺制造而成的。 这种工艺使用接近LSI集成电路的特征尺寸，优化了硅原料利用率，可以带来出色的性能。 这些器件设计用于开关稳压器、开关转换器、电机驱动和继电器驱动器等应用。 此类晶体管可以直接通过集成电路运行。 以前的开发类型为TA09771。 •16A, 50V\n•rDS(ON)= 0.047Ω\n•温度补偿式PSPICE模型\n•峰值电流与脉宽曲线\n•UIS额定值曲线\n•175°C工作温度\n•相关文献;

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in application

16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in application

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

文件：226.37 Kbytes Page：8 Pages

N-Channel 60-V (D-S) MOSFET

文件：897.13 Kbytes Page：6 Pages

N-Channel 6 0-V (D-S) MOSFET

文件：896.98 Kbytes Page：6 Pages

N-Channel 60-V (D-S) MOSFET

文件：898.21 Kbytes Page：6 Pages

N-Channel 6 0-V (D-S) MOSFET

文件：897.27 Kbytes Page：6 Pages

16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

文件：226.37 Kbytes Page：8 Pages