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位置：首页 > IC中文资料第1304页 > RFD16N05

RFD16N05价格

参考价格：￥2.5912

型号：RFD16N05LSM9A 品牌：Fairchild 备注：这里有RFD16N05多少钱，2025年最近7天走势，今日出价，今日竞价，RFD16N05批发/采购报价，RFD16N05行情走势销售排行榜，RFD16N05报价。
型号 功能描述 生产厂家&企业 LOGO 操作
RFD16N05

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
RFD16N05

16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

Intersil

Intersil Corporation

Intersil
RFD16N05

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication

Intersil

Intersil Corporation

Intersil
RFD16N05

60VN-ChannelMOSFET

Features VDS(V)=60V RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW
RFD16N05

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

文件：226.37 Kbytes Page：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
RFD16N05L

16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
RFD16N05L

16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

Intersil

Intersil Corporation

Intersil
RFD16N05LSM

16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

Intersil

Intersil Corporation

Intersil
RFD16N05LSM

16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
RFD16N05LSM

N-ChannelLogicLevelPowerMOSFET50V,16A,47m廓

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
RFD16N05LSM

N-channelEnhancementModePowerMOSFET

Features VDS=60V,ID=30A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

Bychip
RFD16N05LSM

MOSFET-Power,N-Channel,LogicLevel50V,16A,47m

TheseareN−ChannellogiclevelpowerMOSFETsmanufactured usingtheMegaFETprocess.Thisprocess,whichusesfeaturesizes approachingthoseofLSIintegratedcircuitsgivesoptimumutilization ofsilicon,resultinginoutstandingperformance.Theyweredesigned forusewithlogiclevel(5V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
RFD16N05LSM9A

MOSFET-Power,N-Channel,LogicLevel50V,16A,47m

TheseareN−ChannellogiclevelpowerMOSFETsmanufactured usingtheMegaFETprocess.Thisprocess,whichusesfeaturesizes approachingthoseofLSIintegratedcircuitsgivesoptimumutilization ofsilicon,resultinginoutstandingperformance.Theyweredesigned forusewithlogiclevel(5V

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
RFD16N05LSM9A

60VN-ChannelMOSFET

Features VDS(V)=60V RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW
RFD16N05LSM9A

N-ChannelLogicLevelPowerMOSFET50V,16A,47m廓

TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
RFD16N05LSM9A

N-channelEnhancementModePowerMOSFET

Features VDS=60V,ID=30A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

Bychip
RFD16N05SM

N-channelEnhancementModePowerMOSFET

Features VDS=60V,ID=30A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

Bychip
RFD16N05SM

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
RFD16N05SM

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication

Intersil

Intersil Corporation

Intersil
RFD16N05SM9A

N-channelEnhancementModePowerMOSFET

Features VDS=60V,ID=30A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

Bychip
RFD16N05_03

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

文件：226.37 Kbytes Page：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
RFD16N05LSM

N-Channel60-V(D-S)MOSFET

文件：897.13 Kbytes Page：6 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
RFD16N05LSM9A

N-Channel60-V(D-S)MOSFET

文件：896.98 Kbytes Page：6 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
RFD16N05LSM-NL

N-Channel60-V(D-S)MOSFET

文件：898.21 Kbytes Page：6 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
RFD16N05SM

N-Channel60-V(D-S)MOSFET

文件：897.27 Kbytes Page：6 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
RFD16N05SM

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

文件：226.37 Kbytes Page：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
16N05

N-Channel60-V(D-S)MOSFET

文件：897.38 Kbytes Page：6 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体（台湾）有限公司

VBSEMI
D16N05

16A,50V,0.047Ohm,N-ChannelPowerMOSFETs

文件：226.37 Kbytes Page：8 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
KGF16N05D

N-Channel5.5VDualPowerMOSFET

文件：417.89 Kbytes Page：8 Pages

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

RFD16N05产品属性

  • 类型

    描述

  • 型号

    RFD16N05

  • 功能描述

    MOSFET TO-251AA N-Ch Power

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS（导通）

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

RFD16N05供应商更多...

更新时间：2025-5-15 13:44:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市汇莱威科技有限公司
RFD16N05SM9A
ON/安森美
24+
TO-252
505348
免费送样原盒原包现货一手渠道联系
询价
深圳市高捷芯城科技有限公司
RFD16N05SM9A
onsemi(安森美)
24+
TO-252
9555
支持大陆交货,美金交易。原装现货库存。
询价
深圳市芯皇电子有限公司
RFD16N05LSM9A
FAIRCHILD/仙童
TO252
23+
6000
原装现货有上库存就有货全网最低假一赔万
询价
深圳市坤融电子科技有限公司
RFD16N05LSM9A
FAIRCHILD/仙童
24+
TO252
8950
BOM配单专家,发货快,价格低
询价
标准国际(香港)有限公司
RFD16N05LSM
FSC
40
全新原装!优势库存热卖中!
询价
深圳市硅虎电子有限公司
RFD16N05LSM
FAIRCHILD
06+
TO-252
49
进口原装公司现货
询价
深圳市明嘉莱科技有限公司
RFD16N05LSM
FAIRCHILD/仙童
25+
TO-252
154573
明嘉莱只做原装正品现货
询价
深圳市得捷芯城科技有限公司
RFD16N05LSM96S5000
哈里斯
24+
NA/
6259
原厂直销,现货供应,账期支持!
询价
深圳市宏兴瑞科技有限公司
RFD16N05SM9A
ONSEMI/安森美
24+
TO-252-3
60000
询价
深圳市金华微盛电子有限公司
RFD16N05LSM9A
ON
19+
TO-252
18500
询价

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RFD16N05规格书下载地址

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RFD16N05数据表相关新闻

DdatasheetPDF页码索引

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