型号 功能描述 生产厂家&企业 LOGO 操作
RFD16N03L

16A,30V,AvalancheRatedN-ChannelLogicLevelEnhancement-ModePowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregulators,s

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
RFD16N03L

16A,30V,0.025Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregulators,s

Intersil

Intersil Corporation

Intersil

16A,30V,AvalancheRatedN-ChannelLogicLevelEnhancement-ModePowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregulators,s

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

16A,30V,0.025Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregulators,s

Intersil

Intersil Corporation

Intersil

N-ChannelEnhancementModePowerMOSFET

Description TheG16N03Susesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=16A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=67mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-Channel30-V(D-S)MOSFET

文件:959.96 Kbytes Page:8 Pages

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-ChannelEnhancementModeFieldEffectTransistor

文件:667.81 Kbytes Page:5 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

N-channelTrenchMOS??logiclevelFET

文件:92.88 Kbytes Page:12 Pages

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

RFD16N03L产品属性

  • 类型

    描述

  • 型号

    RFD16N03L

  • 功能描述

    MOSFET TO-251

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-6-7 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
24+
NA/
6350
优势代理渠道,原装正品,可全系列订货开增值税票
HARRIS
23+
TO252
20000
全新原装假一赔十
INTERSI
24+
TO252
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
FAIRCHILD/仙童
22+
TO-252
100000
代理渠道/只做原装/可含税
HARRIS
23+
TO252
4500
全新原装、诚信经营、公司现货销售!
FAIRCHILD
06+
TO252
150
一级代理,专注军工、汽车、医疗、工业、新能源、电力
HARRIS(哈利斯)
20+
TO-252-3(DPAK)
3000
INTERSIL
23+
65480
HARRIS
1998
TO252
1480
原装现货海量库存欢迎咨询
24+
N/A
5000
公司存货

RFD16N03L芯片相关品牌

  • ATS
  • CTS
  • EMLSI
  • EXAR
  • FORMOSA
  • ISC
  • lyontek
  • MURATA-PS
  • PANJIT
  • Phoenix
  • SEME-LAB
  • SEMTECH

RFD16N03L数据表相关新闻