16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri

16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri

N-Channel Logic Level Power MOSFET 50V, 16A, 47 m廓

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri

MOSFET - Power, N-Channel, Logic Level 50 V, 16 A, 47 m

These are N−Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5 V

N-channel Enhancement Mode Power MOSFET

Features  VDS= 60V, ID= 30A RDS(ON)

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N 沟道逻辑电平功率 MOSFET 50V，16A，47mΩ

N-Channel 60-V (D-S) MOSFET

文件：897.13 Kbytes Page：6 Pages

16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in application

16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

The RFD16N05 and RFD16N05SM N-channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in application

N-Channel Logic Level Power MOSFET 50V, 16A, 47 m廓

These are N-Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) dri

MOSFET - Power, N-Channel, Logic Level 50 V, 16 A, 47 m

These are N−Channel logic level power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5 V

60V N-Channel MOSFET

Features VDS (V) =60V RDS(ON)

N-channel Enhancement Mode Power MOSFET

Features VDS= 60V, ID= 30A RDS(ON)

N-Channel 6 0-V (D-S) MOSFET

文件：896.98 Kbytes Page：6 Pages

N-Channel 60-V (D-S) MOSFET

文件：898.21 Kbytes Page：6 Pages

N-Channel 60-V (D-S) MOSFET

文件：897.38 Kbytes Page：6 Pages

16A, 50V, 0.047 Ohm, N-Channel Power MOSFETs

文件：226.37 Kbytes Page：8 Pages

N-Channel 5.5V Dual Power MOSFET

文件：417.89 Kbytes Page：8 Pages