16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. Features • 16A, 60V • rDS(ON) = 0.047Ω • Temperature Compensati

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 47mΩ(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. Features • 16A, 60V • rDS(ON) = 0.047Ω • Temperature Compensati

16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. Features • 16A, 60V • rDS(ON) = 0.047Ω • Temperature Compensati

N-Channel 6 0-V (D-S) MOSFET

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N 沟道逻辑电平功率 MOSFET 60V，16A，47mΩ

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 16mΩ ID 42A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 16mΩ ID 6.7A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 16mΩ ID 42A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 16mΩ ID 15A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

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