60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

General description NPN/PNP low VCEsat (BISS) transistor pair in a SOT457 (SC-74) plastic package. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High efficiency, reduces heat generation ■ Reduces printed-circuit board area require

丝印代码：B4；60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

60 V, 1 A NPN/PNP low VCEsat transistor

NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.\n PNP/PNP complement: PBSS5160DS. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability: IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• AEC-Q101 qualifi;

丝印代码：B8；60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

丝印代码：B8；60 V 1 A NPN/NPN low VCEsat (BISS) transistor

General description NPN/NPN low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5160DS. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM

60 V, 1 A NPN/NPN low VCEsat transistor

NPN/NPN low VCEsat transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.\n PNP/PNP complement: PBSS5160DS-Q • Low collector-emitter saturation voltage VCEsat\n• High collector current capability: IC and ICM\n• High collector current gain (hFE) at high IC\n• High efficiency due to less heat generation\n• Smaller required Printed-Circuit Board (PCB) area than for conventional transistors\n• Qualified accord;

丝印代码：2K；60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4160PANP. PNP/PNP complement: PBSS5160PAP. 2. Features and benefits • Very low collec

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

丝印代码：2M；60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4160PAN. PNP/PNP complement: PBSS5160PAP. 2. Features and benefits • Very low collect

丝印代码：3G；60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4160PANS. PNP/PNP complement: PBSS5160PAPS. Features

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

丝印代码：110010；60 V, 1 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5160QA. 2. Features and benefits • Very low collector-

丝印代码：11；60 V, 1 A NPN low VCEsat transistor

1. General description NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capabi

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits.

丝印代码：U5；60 V, 1 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5160T. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces print

60 V, 1 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5160T. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required •

60 V, 1 A NPN low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency, reduces heat generation •Reduces printed-circuit board area required •Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS •Major applica

60 V, 1 A NPN low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency, reduces heat generation •Reduces printed-circuit board area required •Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS •Major applica

60 V, 1 A NPN low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency, reduces heat generation •Reduces printed-circuit board area required •Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS •Major applica

丝印代码：U5；60 V, 1 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5160T-Q. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces pri

60 V, 1 A NPN low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency, reduces heat generation •Reduces printed-circuit board area required •Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS •Major applica

丝印代码：52；60 V, 1 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

丝印代码：52*；60 V, 1 A NPN low VCEsat (BISS) transistor

丝印代码：41；60 V, 1 A NPN low VCEsat (BISS) transistor

丝印代码：41；60 V, 1 A NPN low VCEsat (BISS) transistor

General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High efficiency, reduces heat generation ■ Reduces printed-circuit board a

丝印代码：41；60 V, 1 A NPN low VCEsat (BISS) transistor

1. General description Low VCEsat(BISS) NPN transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5160V 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM •

60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

文件：267.84 Kbytes Page：18 Pages

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

文件：216.47 Kbytes Page：14 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 60V 0.75A SMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

文件：276.45 Kbytes Page：17 Pages

60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

文件：368.23 Kbytes Page：21 Pages

丝印代码：3F；60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

文件：762.59 Kbytes Page：19 Pages

60 V, 1 A NPN low VCEsat (BISS) transistor

封装/外壳：3-XDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 60V 1A DFN1010D-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

NPN low VCEsat (BISS) transistor

文件：370.12 Kbytes Page：10 Pages

60 V, 1 A NPN low VCEsat (BISS) transistor

文件：211.39 Kbytes Page：14 Pages

60 V, 1 A NPN low VCEsat (BISS) transistor

文件：166.98 Kbytes Page：14 Pages

丝印代码：S41；60 V, 1 A NPN low VCEsat BISS transistor

文件：221.45 Kbytes Page：12 Pages

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Extremely low noise voltage caused from diode (1/3 to 1/10 of our conventional MAZ4000 series) • Extremely good rising performance (in the low-current range) • Easy-to-identify the zener-voltage rank by the color bands • Easy