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PBSS4160价格
参考价格：￥0.4819
型号：PBSS4160DPN,115 品牌：NXP 备注：这里有PBSS4160多少钱，2025年最近7天走势，今日出价，今日竞价，PBSS4160批发/采购报价，PBSS4160行情走势销售排行榜，PBSS4160报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 |   | ||
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor General description NPN/PNP low VCEsat (BISS) transistor pair in a SOT457 (SC-74) plastic package. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High efficiency, reduces heat generation ■ Reduces printed-circuit board area require | Philips 飞利浦 | | ||
60 V 1 A NPN/NPN low VCEsat (BISS) transistor General description NPN/NPN low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5160DS. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM | Philips 飞利浦 | | ||
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4160PANP. PNP/PNP complement: PBSS5160PAP. 2. Features and benefits • Very low collec | NEXPERIA 安世 | | ||
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 1. General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4160PAN. PNP/PNP complement: PBSS5160PAP. 2. Features and benefits • Very low collect | NEXPERIA 安世 | | ||
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4160PANS. PNP/PNP complement: PBSS5160PAPS. Features | NEXPERIA 安世 | | ||
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
60 V, 1 A NPN low VCEsat (BISS) transistor 1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5160QA. 2. Features and benefits • Very low collector- | NEXPERIA 安世 | | ||
60 V, 1 A NPN low VCEsat transistor 1. General description NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • High collector current capabi | NEXPERIA 安世 | | ||
60 V, 1 A NPN low VCEsat (BISS) transistor 1. General description NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5160T. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces print | NEXPERIA 安世 | | ||
Silicon NPN transistor in a SOT-23 Plastic Package Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits. | FOSHAN 蓝箭电子 | | ||
60 V, 1 A NPN low VCEsat (BISS) transistor DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5160T. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required • | Philips 飞利浦 | | ||
60 V, 1 A NPN low VCEsat (BISS) transistor 1. General description NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5160T-Q. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces pri | NEXPERIA 安世 | | ||
60 V, 1 A NPN low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
60 V, 1 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
60 V, 1 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
60 V, 1 A NPN low VCEsat (BISS) transistor 1. General description Low VCEsat(BISS) NPN transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5160V 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • | NEXPERIA 安世 | | ||
60 V, 1 A NPN low VCEsat (BISS) transistor General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High efficiency, reduces heat generation ■ Reduces printed-circuit board a | Philips 飞利浦 | | ||
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 文件：267.84 Kbytes Page：18 Pages | Philips 飞利浦 | | ||
60 V, 1 A NPN/PNP low VCEsat transistor | NEXPERIA 安世 | | ||
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor | NEXPERIA 安世 | | ||
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 文件：216.47 Kbytes Page：14 Pages | Philips 飞利浦 | | ||
60 V, 1 A NPN/NPN low VCEsat transistor | NEXPERIA 安世 | | ||
封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：散装 描述：TRANS NPN 60V 0.75A SMT3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 文件：276.45 Kbytes Page：17 Pages | Philips 飞利浦 | | ||
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor 文件：368.23 Kbytes Page：21 Pages | Philips 飞利浦 | | ||
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor 文件：762.59 Kbytes Page：19 Pages | NEXPERIA 安世 | | ||
60 V, 1 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
封装/外壳：3-XDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 60V 1A DFN1010D-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ETC 知名厂家 | ETC | | |
Low VCEsat (BISS) transistors 文件：948.33 Kbytes Page：12 Pages | Philips 飞利浦 | | ||
NPN low VCEsat (BISS) transistor 文件：370.12 Kbytes Page：10 Pages | Philips 飞利浦 | | ||
60 V, 1 A NPN low VCEsat (BISS) transistor 文件：211.39 Kbytes Page：14 Pages | Philips 飞利浦 | | ||
60 V, 1 A NPN low VCEsat (BISS) transistor 文件：166.98 Kbytes Page：14 Pages | Philips 飞利浦 | | ||
60 V, 1 A NPN low VCEsat BISS transistor 文件：221.45 Kbytes Page：12 Pages | NEXPERIA 安世 | | ||
Full/Low Speed USB Digital Isolator Digital isolators with iCoupler® technology enable designers to implement isolation in designs without the cost, size, power, performance, and reliability constraints found with optocouplers. iCoupler digital isolators also meet the wide range of creepage/clearance requirements and are the industr | AD 亚德诺 | | ||
Connector, BNC (Female), Bulkhead 文件：24.27 Kbytes Page：1 Pages | POMONA Pomona Electronics | | ||
20-pin 0.1 Female Headers - Rainbow Color Mix - 5 pack 文件：525.84 Kbytes Page：2 Pages | Adafruit | | ||
Lockit™ Loops 文件：121.71 Kbytes Page：1 Pages | Heyco | | ||
Full/Low Speed USB Digital Isolator 文件：302.16 Kbytes Page：16 Pages | AD 亚德诺 | |
PBSS4160产品属性
- 类型
描述
- 型号
PBSS4160
- 制造商
NXP Semiconductors
- 功能描述
Trans GP BJT NPN/PNP 60V 1A,PBSS4160DPN
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
NA/ |
12000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEXPERIA/安世 |
24+ |
原厂原封可拆样 |
65258 |
百分百原装现货,实单必成 |
|||
恩XP |
23+ |
NA |
61598 |
电子元器件供应原装现货. 优质独立分销。原厂核心渠道 |
|||
NEXPERIA |
18+ |
SMD |
2988 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
恩XP |
23+ |
LQFP64 |
12700 |
买原装认准中赛美 |
|||
恩XP |
21+ |
DFN6 |
12000 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
恩XP |
25+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
|||
恩XP |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
恩XP |
24+ |
SOT-883 |
30000 |
原装正品公司现货,假一赔十! |
|||
恩XP |
25+ |
DFN6 |
32360 |
NXP/恩智浦全新特价PBSS4160PANS即刻询购立享优惠#长期有货 |
PBSS4160规格书下载地址
PBSS4160参数引脚图相关
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PBSS4160数据表相关新闻
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