1. General description

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power

DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

NPN/NPN complement: PBSS4160PAN. PNP/PNP complement: PBSS5160PAP.

2. Features and benefits

• Very low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain hFE at high IC

• Reduced Printed-Circuit Board (PCB) requirements

• High efficiency due to less heat generation

• AEC-Q101 qualified

3. Applications

• Load switch

• Battery-driven devices

• Power management

• Charging circuits

• Power switches (e.g. motors, fans)