60 V, 1 A NPN low VCEsat (BISS) transistor

60 V, 1 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

60 V, 1 A NPN low VCEsat (BISS) transistor

封装/外壳：SC-70，SOT-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 60V 0.75A SOT323 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

60 V, 1 A NPN low VCEsat (BISS) transistor

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Digital isolators with iCoupler® technology enable designers to implement isolation in designs without the cost, size, power, performance, and reliability constraints found with optocouplers. iCoupler digital isolators also meet the wide range of creepage/clearance requirements and are the industr

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