位置：PBSS4160DS > PBSS4160DS详情
PBSS4160DS中文资料
PBSS4160DS数据手册规格书PDF详情
General description
NPN/NPN low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.
PNP complement: PBSS5160DS.
Features
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability: IC and ICM
■ High collector current gain (hFE) at high IC
■ High efficiency due to less heat generation
■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Applications
■ Dual low power switches (e.g. motors, fans)
■ Automotive applications
PBSS4160DS产品属性
- 类型
描述
- 型号
PBSS4160DS
- 功能描述
两极晶体管 - BJT LO VCESAT(BISS)TRANS TAPE-7
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Nexperia(安世) |
24+ |
SOT-23-6 |
7957 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
NEXPERIA/安世 |
25+ |
SOT457 |
600000 |
NEXPERIA/安世全新特价PBSS4160DS即刻询购立享优惠#长期有排单订 |
|||
2015+ |
200 |
公司现货库存 |
|||||
原厂原包 |
24+ |
原装 |
38560 |
原装进口现货,工厂客户可以放款。17377264928微信同 |
|||
恩XP |
23+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEXPERIA |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
NEXPERIA/安世 |
20+ |
TSOP-6 |
120000 |
原装正品 可含税交易 |
|||
NEXPERIA/安世 |
2021+ |
SOT-457 |
9000 |
原装现货,随时欢迎询价 |
|||
恩XP |
19+ |
NA |
3000 |
||||
恩XP |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
PBSS4160DS,115 价格
参考价格：￥0.8337
PBSS4160DS 资料下载更多...
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PHILIPS相关芯片制造商
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