60 V, 1 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5160T. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required •

60 V, 1 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5160T. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces print

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits.

60 V, 1 A NPN low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency, reduces heat generation •Reduces printed-circuit board area required •Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS •Major applica

三极管

60 V, 1 A NPN low VCEsat (BISS) transistor

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

60 V, 1 A NPN low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency, reduces heat generation •Reduces printed-circuit board area required •Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS •Major applica

60 V, 1 A NPN low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency, reduces heat generation •Reduces printed-circuit board area required •Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS •Major applica

60 V, 1 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5160T-Q. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces pri

60 V, 1 A NPN low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency, reduces heat generation •Reduces printed-circuit board area required •Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS •Major applica

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 60V 1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN low VCEsat (BISS) transistor

文件：370.12 Kbytes Page：10 Pages

60 V, 1 A NPN low VCEsat (BISS) transistor

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 60V 1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Full/Low Speed USB Digital Isolator

Digital isolators with iCoupler® technology enable designers to implement isolation in designs without the cost, size, power, performance, and reliability constraints found with optocouplers. iCoupler digital isolators also meet the wide range of creepage/clearance requirements and are the industr

Connector, BNC (Female), Bulkhead

文件：24.27 Kbytes Page：1 Pages

Lockit™ Loops

文件：121.71 Kbytes Page：1 Pages

20-pin 0.1 Female Headers - Rainbow Color Mix - 5 pack

文件：525.84 Kbytes Page：2 Pages

Full/Low Speed USB Digital Isolator

文件：302.16 Kbytes Page：16 Pages