Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features Low VCE(sat), high current. Applications General purpose switching and muting, LCD back-lighting, supply line switching circuits.

丝印代码：U5；60 V, 1 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5160T. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces print

60 V, 1 A NPN low VCEsat (BISS) transistor

DESCRIPTION NPN low VCEsat transistor in a SOT23 plastic package. PNP complement: PBSS5160T. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required •

60 V, 1 A NPN low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency, reduces heat generation •Reduces printed-circuit board area required •Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS •Major applica

60 V, 1 A NPN low VCEsat (BISS) transistor

NPN low VCEsat transistor in a SOT23 plastic package.\n PNP complement: PBSS5160T. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High efficiency, reduces heat generation\n• Reduces printed-circuit board area required\n• Cost effective replacement for medium power transistor BCP55 and BCX55.\n• AEC-Q101 qualified;

Low VCEsat (BISS) transistors

文件：948.33 Kbytes Page：12 Pages

三极管

60 V, 1 A NPN low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency, reduces heat generation •Reduces printed-circuit board area required •Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS •Major applica

60 V, 1 A NPN low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency, reduces heat generation •Reduces printed-circuit board area required •Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS •Major applica

60 V, 1 A NPN low VCEsat (BISS) transistor

NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5160T-Q. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High efficiency, reduces heat generation\n• Reduces printed-circuit board area required\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

丝印代码：U5；60 V, 1 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat transistor in a small SOT23 plastic package. PNP complement: PBSS5160T-Q. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces pri

60 V, 1 A NPN low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency, reduces heat generation •Reduces printed-circuit board area required •Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS •Major applica

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 60V 1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN low VCEsat (BISS) transistor

文件：370.12 Kbytes Page：10 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 60V 1A TO236AB 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • High reliability, achieved by the DHD structure • Allowing to insert to a 5 mm pitch hole • Finely divided zener-voltage rank • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 39 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Extremely low noise voltage caused from diode (1/3 to 1/10 of our conventional MAZ4000 series) • Extremely good rising performance (in the low-current range) • Easy-to-identify the zener-voltage rank by the color bands • Easy