60 V 1 A NPN/NPN low VCEsat (BISS) transistor

General description NPN/NPN low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5160DS. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

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60 V, 1 A NPN/NPN low VCEsat transistor

封装/外壳：SC-74，SOT-457 包装：卷带（TR） 描述：TRANS 2NPN 60V 1A SC-74 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列

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