1. General description

Low VCEsat(BISS) NPN transistor in a SOT666 ultra small and flat lead Surface-Mounted Device

(SMD) plastic package.

PNP complement: PBSS5160V

2. Features and benefits

• Low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High efficiency, reduces heat generation

• Reduces printed-circuit board area required

• Cost effective replacement for medium power transistor BCP55 and BCX55

3. Applications

• Major application segments:

• Telecom infrastructure

• Industrial

• Power management:

• DC-to-DC conversion

• Supply line switching

• Peripheral driver:

• Driver in low supply voltage applications (e.g. lamps and LEDs)

• Inductive load driver (e.g. relays, buzzers and motors)