60 V, 1 A NPN low VCEsat (BISS) transistor

General description Low VCEsat (BISS) NPN transistor in a SOT666 plastic package. PNP complement: PBSS5160V. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High efficiency, reduces heat generation ■ Reduces printed-circuit board a

60 V, 1 A NPN low VCEsat (BISS) transistor

60 V, 1 A NPN low VCEsat (BISS) transistor

1. General description Low VCEsat(BISS) NPN transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS5160V 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM •

60 V, 1 A NPN low VCEsat (BISS) transistor

封装/外壳：SOT-563，SOT-666 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 60V 0.9A SOT666 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

60 V, 1 A NPN low VCEsat (BISS) transistor

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