Silicon NPN Transistor Ultra High Frequency Amp

Description: The NTE23 is suitable for a low noise amplifier in the VHF to UHF band. Features: ● Low Noise Figure: NF 3.0dB Typ. @ f = 500MHz ● High Power Gain: Gpe 15dB Typ. @ f = 500MHz ● High Cutoff Frequency: fT = 2.0GHz Typ

Bi-Polar transistor Selector Guide

Silicon Controlled Rectifier (SCR) TV Deflection Circuit

Features: • CTV 110° – CRT Horizontal Deflection • Tracer Switch

Silicon NPN Transistor High Voltage, Horizontal Output

Description: The NTE2300 is a silicon NPN transistor in a TO3P type package designed for use in large screen color TV deflection circuits. Features: • High Breakdown Voltage and High Reliability • High Switching Speed

Silicon NPN Transistor High Voltage Horizontal Output

Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Glassivated Base–Collector Junction • Safe Operating Area @ 50µs = 20A, 400V • Switchin

Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode

Features: • High Breakdown Voltage and High Reliability • High Switching Speed • Capable of Being Mounted in a Variety of Methods

Silicon NPN Transistor Horizontal Deflection

Description: The NTE2303 is a silicon NPN transistor in a TO220 type package designed for use in small screen black and white deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Glassivated Base–Collector Junction • Switching Times with Inductive Loads: tf =

Silicon NPN Transistor High Current, High Speed Switch (Compl to NTE2314)

Description: The NTE2304 is a silicon NPN transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications. Features: • Low Collector–Emitter Saturation Voltage • Wide ASO and Resist

Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

Silicon NPN Transistor High Gain Power Amp

Features: • High Voltage • High DC Current Gain • High Collector Power Dissipation Capability

Silicon NPN Transistor High Voltage, High Current Switch

Features: • High Breakdown Voltage • Fast Switching Speed • Wide ASO

Silicon NPN Transistor High Voltage, High Current Switch

Features: • High Breakdown Voltage • Fast Switching Speed • Wide ASO

Silicon Controlled Rectifier (SCR) TV Deflection Circuit

Features: • CTV 110° – CRT Horizontal Deflection • Comutater Switch

Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications.

Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: ● High Blocking Capability: VCEX = 1000V ● Wide Surge Area: ICSM = 55A @ 350V Applications: ● Switchmode Power Supply ● DC/DC and DC/AC Co

Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2312 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. This device is particularly suited for 115V and 220V switch–mode applications such as switching regulators, inverter

Silicon NPN Transistor High Speed Switch

Description: The NTE2313 is a high–voltage, high–speed, glass–passivated NPN power transistor in a TO220 type package designed for use in converters, inverters, switching regulators, motor control systems, and switching applications.

Silicon PNP Transistor High Current, High Speed Switch (Compl to NTE2304)

Description: The NTE2314 is a silicon PNP transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications. Features: • Low Collector–Emitter Saturation Voltage • Wide ASO and Resist

Silicon NPN Transistor Fast Switching Power Darlington

Description: The NTE2315 is a silicon epitaxial planer NPN power Darlington transistor in a TO220 type package with an integrated base–emitter speed–up diode designed for use in high voltage, high current, fast switching applications. In particular, the NTE2315 can be used in horizontal output

Silicon NPN Transistor Fast Switching Power Darlington

Description: The NTE2317 is an NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter circuits for motor controls. Applications: • Automotive Ignition Applications • Invert Circuits for

Silicon NPN Transistor High Voltage Fast Switching Power Darlington

Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter circuits for motor controls. Controlled performances in the linear region make this devi

Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2318 is a high–voltage, high–speed, switching NPN transistor with an internal damper diode in a TO218 type package. This device is specifically designed for use in large screen color deflection circuits. Features: ● Collector–Emitter Voltage: VCE = 1500V ● Collector–Emitter

Silicon NPN Transistor High Voltage, High Speed Power Switch

Description: The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated switchmode applications. Features: • Fast Turn–On Times @ TC =

Silicon PNP Transistor Darlington Amplifier, Preamp

Description: The NTE232 is a silicon, planar, epitaxial passivated PNP Darlington transistor in a TO92 type package designed for preamplifier input applications where high impedance is a requirement.

Silicon NPN/PNP Transistor Quad, General Purpose Switch, Amp (Complementary Pair)

Silicon NPN/PNP Transistor Quad, General Purpose Switch, Amp (Complementary Pair)

Silicon NPN Transistor Quad, General Purpose

Silicon NPN Transistor Quad, General Purpose

Silicon NPN Transistor Quad, Amplifier

Silicon NPN Transistor Quad, Amplifier

Silicon NPN Transistor Color TV Horizontal Deflection Output

Features: • High Speed (tf = 100nsec) • High Breakdown Voltage (VCBO = 1500V) • High Reliability (adoption of HVP process) Applications: • Color TV Horizontal Deflection Output

Silicon NPN Transistor High Voltage Switch

Features: • High Reverse Voltage: VCBO = 900V (Max) • High Speed Switching: tf = 0.7µs (Max)

Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2327 is a silicon NPN transistor in a TO126 type package designed for use in converters, inverters, switching regulators, motor control systems and switching applications.

cSilicon Complementary Transistors Audio Power Output

Features: • Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage

cSilicon Complementary Transistors Audio Power Output

Features: • Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage

Silicon NPN Transistor Video IF, Oscillator

Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . .

Silicon NPN Transistor High Gain Amp w/Internal Zener Diode

Features: • Excellent Wide Safe Operating Area • Included Avalanche Diode • High DC Current Gain • High Collector Power Dissipation Capability

Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode

Features: • High Speed (tf = 100nsec) • High Breakdown Voltage (VCBO = 1500V) • High Reliability • On–Chip Damper Diode Applications: • Color TV Horizontal Deflection Output • Color Display Horizontal Deflection Output

Darlington Silicon NPN Transistor w/ Internal Damper & Zener Diode

Description: The NTE2332 Darlington transistor is especially well suited for use in switching of L load motor drivers, printer hammer drivers, relay drivers, etc. Features: High DC Current Gain Large Current Capacity and Wide ASO Contains 60 ±10V Avalanche Diode Between Collector

Silicon NPN Power Transistor for Switching Power Applications

Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line–operated Switchmode Power supplies and electronic light ballasts. Features: • Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain hFE

Silicon NPN Transistor Darlington Driver w/Internal Damper and Zener Diode

Description: The NTE2334 is a silicon Darlington NPN Driver with an internal damper and zener diode in a TO220 type package designed for use in applications such as the switching of the L load of a motor driver, hammer driver, relay driver, etc. Features: • High DC Current Gain • Lar

Silicon NPN Transistor Darlington w/Internal Zener Diode for Line Operated TV

Features: • Excellent Wide Safe Operating Area • Included Avalanche Diode • High DC Current Gain

Silicon NPN Transistor Darlington Switch w/Internal Damper & Zener Diode

Features: • 60V Zener Diode Built–In Between Collector and Base • Low Fluctuation in Breakdown Voltages • High Energy Handling Capability • High Speed Switching

Silicon NPN Transistor High Speed Switch

Features: • High Collector–Base Voltage (VCBO) • Wide Area of Safety Operation (ASO) • Good Linearity of DC Current Gain (hFE)

Silicon NPN Transistor Darlington Power Amp w/Internal Damper & Zener Diode

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous

Silicon NPN Transistor High Voltage, High Speed Switch

Features: ● High Breakdown Voltage, High Reliability ● Fast Switching Speed ● Wide Safe Operating Area

Silicon PNP Transistor Low Noise, High Gain Amplifier

Description: The NTE234 is a silicon PNP transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications. This device features low collector satu ration voltage, tight beta control, and excellent low noise characteristics

Silicon NPN Transistor Darlington Power Amp, Switch

Silicon NPN Transistor Darlington Power Amp, Switch Features:
60V Zener Diode Built–In Between Collector and Base
Very Small Fluctuation in Breakdown Voltages
Large Energy Handling Capability
High Speed Switching

Silicon Complementary Transistors Darlington Driver

Description: The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a TO92 type package designed for general purpose, low frequency applications and as relay drivers.

Silicon Complementary Transistors Darlington Driver

Description: The NTE2341 (NPN) and NTE2342 (PNP) are silicon complementary Darlington transistors in a TO92 type package designed for general purpose, low frequency applications and as relay drivers.

Silicon Complementary Transistors Darlington Power Amp, Switch

NTE2343 (NPN) & NTE2344 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch

Silicon Complementary Transistors Darlington Power Amp, Switch

NTE2343 (NPN) & NTE2344 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch

Silicon Complementary Transistors General Purpose Darlington, Power Amplifier

Description: The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT–82 type package designed for use in audio output stages and general amplifier and switching applications.. Features:
High DC Current Gain: hFE= 750 (Min) @ IC= 3A, VCE= 3V

Silicon Complementary Transistors General Purpose Darlington, Power Amplifier

Description: The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT–82 type package designed for use in audio output stages and general amplifier and switching applications.. Features:
High DC Current Gain: hFE= 750 (Min) @ IC= 3A, VCE= 3V

Silicon NPN Transistor General Purpose, Medium Power

Description: The NTE2347 is a silicon NPN transistor in a TO39 type package designed for use in high current, fast switching applications and for power amplifiers.

Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications. Features:
High DC Current Gain: hFE= 1000 (Min) @ IC= 25A hFE=

Silicon Darlington Transistors High Current, General Purpose

Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC

Silicon NPN Transistor Final RF Power Output

Description: The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment.

Silicon Darlington Transistors High Current, General Purpose

Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications. Features: • High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC

Silicon Complementary Transistors Darlington Power Amp, Switch

Features: • High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A • Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A

Silicon Complementary Transistors Darlington Power Amp, Switch

Features: • High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A • Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A

Silicon NPN Transistor TV Horizontal Deflection Output w/Damper Diode

Features: • High Speed: tf = 100nsec • High Breakdown Voltage: VCBO = 1500V • On–Chip Damper Diode