Silicon Controlled Rectifier (SCR) TV Deflection Circuit

Features: • CTV 110° – CRT Horizontal Deflection • Tracer Switch

Gate Turn-Off SCRs

Silicon NPN Transistor High Voltage, Horizontal Output

Description: The NTE2300 is a silicon NPN transistor in a TO3P type package designed for use in large screen color TV deflection circuits. Features: • High Breakdown Voltage and High Reliability • High Switching Speed

Silicon NPN Transistor High Voltage Horizontal Output

Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Glassivated Base–Collector Junction • Safe Operating Area @ 50µs = 20A, 400V • Switchin

Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode

Features: • High Breakdown Voltage and High Reliability • High Switching Speed • Capable of Being Mounted in a Variety of Methods

Silicon NPN Transistor Horizontal Deflection

Description: The NTE2303 is a silicon NPN transistor in a TO220 type package designed for use in small screen black and white deflection circuits. Features: • Collector–Emitter Voltage: VCEX = 1500V • Glassivated Base–Collector Junction • Switching Times with Inductive Loads: tf =

Silicon NPN Transistor High Current, High Speed Switch (Compl to NTE2314)

Description: The NTE2304 is a silicon NPN transistor in a TO3P type package. Typical applications include relay drivers, high–speed inverters, converters, and other general high–current switching applications. Features: • Low Collector–Emitter Saturation Voltage • Wide ASO and Resist

Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

Silicon Complementary Transistors High Voltage Power Amplifier

Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits. Features: • High Collector–Emitter Sustaining Voltage: VCEO(sus) = 16

Silicon NPN Transistor High Gain Power Amp

Features: • High Voltage • High DC Current Gain • High Collector Power Dissipation Capability

Silicon NPN Transistor High Voltage, High Current Switch

Features: • High Breakdown Voltage • Fast Switching Speed • Wide ASO

Silicon NPN Transistor High Voltage, High Current Switch

Features: • High Breakdown Voltage • Fast Switching Speed • Wide ASO

Bi-Polar transistor Selector Guide

Complementary Transistors

Low voltage fast-switching PNP power transistor

Description The device is a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Features • Very low collector-emitter saturation voltage • Hig

Modular Radio Telemetry System

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1/4 FLAT PLUG PHONE PLUGS

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MINIATURE FUSES - 5x20 mm

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5x20 mm MINIATURE FUSES

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