Silicon Complementary Transistors General Purpose Darlington, Power Amplifier

Description: The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT–82 type package designed for use in audio output stages and general amplifier and switching applications.. Features:
High DC Current Gain: hFE= 750 (Min) @ IC= 3A, VCE= 3V

CTCSS(Continuous Tone Controlled Squelch System

CTCSS Encoder/Decoder with Voice Signal Circuit Continuous Tone Controlled Squelch System (CTCSS) Encoder/Decoder Can be programmed with up to 50 frequencies Built-in high speed tone decoder (Typ. : 150ms@67Hz) Integrated voice signal circuits such as limiter, splatter filter, etc.

P - Channel 40V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA

P - Channel 40V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA

PLL Synthesizer Module

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P-Channel MOSFET

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