Silicon Complementary Transistors General Purpose Darlington, Power Amplifier

Description: The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an SOT–82 type package designed for use in audio output stages and general amplifier and switching applications.. Features:
High DC Current Gain: hFE= 750 (Min) @ IC= 3A, VCE= 3V

Twopower supply (5 V and 12 V) operation CCIR 1/3 type B/W CCD Area Sensor for CCIR

DESCRIPTION LZ2346 is 1 /3-type (6.0 mm) solid-state image sensor that consists of PN phote-diodes and CCDS (charge-coupled devices) driven by only positive voltages. Having approximately 220000 pixels (horizontal 384 X vertical 582), the sensor provides a stable B/W image. FEATURES ● Number of

PLLatinum??Frequency Synthesizer for RF Personal Communications

文件：606.06 Kbytes Page：27 Pages

PLLatinum??Frequency Synthesizer for RF Personal Communications

文件：606.06 Kbytes Page：27 Pages

PLLatinum??Frequency Synthesizer for RF Personal Communications

文件：606.06 Kbytes Page：27 Pages