Silicon NPN Transistor Video IF, Oscillator

Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . .

Bi-Polar transistor Selector Guide

Silicon NPN Transistor High Gain Amp w/Internal Zener Diode

Features: • Excellent Wide Safe Operating Area • Included Avalanche Diode • High DC Current Gain • High Collector Power Dissipation Capability

Silicon NPN Transistor Color TV Horizontal Deflection Output w/Damper Diode

Features: • High Speed (tf = 100nsec) • High Breakdown Voltage (VCBO = 1500V) • High Reliability • On–Chip Damper Diode Applications: • Color TV Horizontal Deflection Output • Color Display Horizontal Deflection Output

Darlington Silicon NPN Transistor w/ Internal Damper & Zener Diode

Description: The NTE2332 Darlington transistor is especially well suited for use in switching of L load motor drivers, printer hammer drivers, relay drivers, etc. Features: High DC Current Gain Large Current Capacity and Wide ASO Contains 60 ±10V Avalanche Diode Between Collector

Silicon NPN Power Transistor for Switching Power Applications

Description: The NTE2333 is a silicon NPN Power Transistor in a TO220 package designed for use in 220V line–operated Switchmode Power supplies and electronic light ballasts. Features: • Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain hFE

Silicon NPN Transistor Darlington Driver w/Internal Damper and Zener Diode

Description: The NTE2334 is a silicon Darlington NPN Driver with an internal damper and zener diode in a TO220 type package designed for use in applications such as the switching of the L load of a motor driver, hammer driver, relay driver, etc. Features: • High DC Current Gain • Lar

Silicon NPN Transistor Darlington w/Internal Zener Diode for Line Operated TV

Features: • Excellent Wide Safe Operating Area • Included Avalanche Diode • High DC Current Gain

Silicon NPN Transistor Darlington Switch w/Internal Damper & Zener Diode

Features: • 60V Zener Diode Built–In Between Collector and Base • Low Fluctuation in Breakdown Voltages • High Energy Handling Capability • High Speed Switching

Silicon NPN Transistor High Speed Switch

Features: • High Collector–Base Voltage (VCBO) • Wide Area of Safety Operation (ASO) • Good Linearity of DC Current Gain (hFE)

Silicon NPN Transistor Darlington Power Amp w/Internal Damper & Zener Diode

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous

Silicon NPN Transistor High Voltage, High Speed Switch

Features: ● High Breakdown Voltage, High Reliability ● Fast Switching Speed ● Wide Safe Operating Area

Bi-Polar transistor Selector Guide

Bi-Polar transistor Selector Guide

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

DC-DC Converters 50 to 200 Watts

Product Highlights The VI-200 family, with over 14 million units shipped, is Vicor’s broad series of “zero-current-switching” component-level DC-DC converters. Operating at frequencies up to 2 MHz, VI-200 family converters offer exceptional power density, efficiency, noise performance, reliabili

PLLatinum??Dual Frequency Synthesizer for RF Personal Communications

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1.0 mm X 4.0 mm Series

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