NP80N055集成电路资料瑞萨原装现货专卖NEC-IC资料网

您好,欢迎来到114ic资料网！

114ic电子网登录注册

芯片资料

数据手册
丝印反查
库存查询
行业新闻
生产厂家
替换型号
晶体管

精确

型号	功能描述	生产厂家企业	LOGO
NP80N055	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 文件：79.49 Kbytes Page：8 Pages	NEC 瑞萨	NEC
NP80N055	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE	RENESAS 瑞萨	RENESAS
NP80N055CHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055CHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055CHE-S12-AZ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055CHE-S12-AZ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055CLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900	RENESAS 瑞萨	RENESAS
NP80N055CLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC
NP80N055CLE-S12-AZ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC
NP80N055CLE-S12-AZ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900	RENESAS 瑞萨	RENESAS
NP80N055DHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055DHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055DHE-S12-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055DHE-S12-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055DLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC
NP80N055DLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900	RENESAS 瑞萨	RENESAS
NP80N055DLE-S12-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900	RENESAS 瑞萨	RENESAS
NP80N055DLE-S12-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC
NP80N055EHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055EHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055EHE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055EHE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055EHE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055EHE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055ELE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900	RENESAS 瑞萨	RENESAS
NP80N055ELE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC
NP80N055ELE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC
NP80N055ELE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900	RENESAS 瑞萨	RENESAS
NP80N055ELE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900	RENESAS 瑞萨	RENESAS
NP80N055ELE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC
NP80N055KHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055KHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055KHE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055KHE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055KHE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055KHE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055KLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC
NP80N055KLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900	RENESAS 瑞萨	RENESAS
NP80N055KLE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900	RENESAS 瑞萨	RENESAS
NP80N055KLE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC
NP80N055KLE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC
NP80N055KLE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900	RENESAS 瑞萨	RENESAS
NP80N055MDG	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N055MDG, NP80N055NDG, and NP80N055PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance - NP80N055MDG, NP80N055NDG RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A)	RENESAS 瑞萨	RENESAS
NP80N055MDG-S18-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N055MDG, NP80N055NDG, and NP80N055PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance - NP80N055MDG, NP80N055NDG RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A)	RENESAS 瑞萨	RENESAS
NP80N055MHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055MHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055MHE	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 11mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP80N055MHE-S18-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055MHE-S18-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055MLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC
NP80N055MLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900	RENESAS 瑞萨	RENESAS
NP80N055MLE-S18-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC
NP80N055MLE-S18-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900	RENESAS 瑞萨	RENESAS
NP80N055NDG	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N055MDG, NP80N055NDG, and NP80N055PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance - NP80N055MDG, NP80N055NDG RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A)	RENESAS 瑞萨	RENESAS
NP80N055NDG-S18-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N055MDG, NP80N055NDG, and NP80N055PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance - NP80N055MDG, NP80N055NDG RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A)	RENESAS 瑞萨	RENESAS
NP80N055NHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055NHE	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 11mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP80N055NHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055NHE-S18-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055NHE-S18-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC

NP80N055产品属性

类型
描述
型号
NP80N055
制造商
NEC
制造商全称
NEC
功能描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NP80N055供应商更多...

更新时间：2025-11-19 10:32:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市诺美思科技有限公司	NP80N055KLE-E1-AY	RENESAS		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市宝芯创电子有限公司	NP80N055KHE-E1-AY	RENESAS/瑞萨	13+	TO263	28744	进口原盘现货/800	询价
深圳市河锋鑫科技有限公司	NP80N055NDGS18AY	Renesas	22+	TO2623 Long Leads I2Pak TO262A	9000	原厂渠道,现货配单	询价
深圳市中联芯电子有限公司	NP80N055CLE	VBsemi	24+	TO220	9000	只做原装正品有挂有货假一赔十	询价
深圳市富利微电子科技有限公司	NP80N055KHE-E1-AY	RENESAS/瑞萨	24+	TO-251	30000	房间原装现货特价热卖,有单详谈	询价
深圳市鹏和科技有限公司	NP80N055	NEC	24+	TO-262	5000	只做原装公司现货	询价
深圳市东来宝电子科技有限公司	NP80N055KLE-E1-AY	RENESAS/瑞萨	24+	TO-263	17500	郑重承诺只做原装进口现货	询价
深圳市勤思达科技有限公司	NP80N055CLE	VBsemi	24+	TO220	5000	全新原装正品,现货销售	询价
京海半导体(深圳)有限公司	NP80N055	NEC	21+	TO-262	10000	原装现货假一罚十	询价
现代芯城（深圳）科技有限公司	NP80N055PDG-E1B-AY		24+	N/A	56000	一级代理-主营优势-实惠价格-不悔选择	询价

NP80N055芯片相关品牌

NP80N055规格书下载地址

NP80N055参数引脚图相关

NP80N055数据表相关新闻

NOVATEK
公司原装现货
2022-4-14
NP16N06QLK-E1-AY 瑞智芯只有原装
深圳市瑞智芯科技有限公司联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号： NP16N06QLK-E1-AY 类别分立半导体产品晶体管 - FET，MOSFET - 阵列制造商 Renesas Electronics America Inc 封装：8-PowerL
2021-9-4
NP90N04NUK-S18-AY 瑞智芯只有原装
深圳市瑞智芯科技有限公司联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：NP90N04NUK-S18-AY 类别分立半导体产品晶体管 - FET，MOSFET - 单个制造商 Renesas Electronics America Inc 包装：50 封装
2021-9-3
NOSE687M002R0060 深圳市得捷芯城电子科技 AVX KEMET 尼康三洋钽电容代理商
NOSE687M002R0060 深圳市得捷芯城电子科技 AVX KEMET 尼康三洋钽电容代理商
2020-8-24
NPA1006假一罚十
只做原装正品，欢迎咨询。
2020-7-16
NPA-730B-005D
板机接口压力传感器
2019-9-10

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107

您好,欢迎来到114ic资料网！

NP80N055产品属性

NP80N055供应商更多...

NP80N055芯片相关品牌

NP80N055规格书下载地址

NP80N055参数引脚图相关

NP80N055数据表相关新闻

NOVATEK

NP16N06QLK-E1-AY 瑞智芯 只有原装

NP90N04NUK-S18-AY 瑞智芯 只有原装

NOSE687M002R0060 深圳市得捷芯城电子科技 AVX KEMET 尼康 三洋 钽电容代理商

NPA1006假一罚十

NPA-730B-005D

DdatasheetPDF页码索引

NP16N06QLK-E1-AY 瑞智芯只有原装

NP90N04NUK-S18-AY 瑞智芯只有原装

NOSE687M002R0060 深圳市得捷芯城电子科技 AVX KEMET 尼康三洋钽电容代理商