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型号	功能描述	生产厂家&企业	LOGO
NP80N055	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 文件：79.49 Kbytes Page：8 Pages	NEC 瑞萨	NEC
NP80N055CHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055CHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055CHE-S12-AZ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055CHE-S12-AZ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055CLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900	RENESAS 瑞萨	RENESAS
NP80N055CLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC
NP80N055CLE-S12-AZ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC
NP80N055CLE-S12-AZ	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900	RENESAS 瑞萨	RENESAS
NP80N055DHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055DHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055DHE-S12-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055DHE-S12-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055DLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC
NP80N055DLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900	RENESAS 瑞萨	RENESAS
NP80N055DLE-S12-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900	RENESAS 瑞萨	RENESAS
NP80N055DLE-S12-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC
NP80N055EHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055EHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055EHE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055EHE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055EHE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055EHE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055ELE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900	RENESAS 瑞萨	RENESAS
NP80N055ELE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC
NP80N055ELE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC
NP80N055ELE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900	RENESAS 瑞萨	RENESAS
NP80N055ELE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900	RENESAS 瑞萨	RENESAS
NP80N055ELE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC
NP80N055KHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055KHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055KHE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055KHE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055KHE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055KHE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055KLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC
NP80N055KLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900	RENESAS 瑞萨	RENESAS
NP80N055KLE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900	RENESAS 瑞萨	RENESAS
NP80N055KLE-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC
NP80N055KLE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC
NP80N055KLE-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900	RENESAS 瑞萨	RENESAS
NP80N055MDG	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N055MDG, NP80N055NDG, and NP80N055PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance - NP80N055MDG, NP80N055NDG RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A)	RENESAS 瑞萨	RENESAS
NP80N055MDG-S18-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N055MDG, NP80N055NDG, and NP80N055PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance - NP80N055MDG, NP80N055NDG RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A)	RENESAS 瑞萨	RENESAS
NP80N055MHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055MHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055MHE	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 11mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP80N055MHE-S18-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055MHE-S18-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055MLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC
NP80N055MLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900	RENESAS 瑞萨	RENESAS
NP80N055MLE-S18-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC
NP80N055MLE-S18-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900	RENESAS 瑞萨	RENESAS
NP80N055NDG	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N055MDG, NP80N055NDG, and NP80N055PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance - NP80N055MDG, NP80N055NDG RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A)	RENESAS 瑞萨	RENESAS
NP80N055NDG-S18-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP80N055MDG, NP80N055NDG, and NP80N055PDG are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Logic level • Super low on-state resistance - NP80N055MDG, NP80N055NDG RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A)	RENESAS 瑞萨	RENESAS
NP80N055NHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055NHE	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 11mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP80N055NHE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055NHE-S18-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode	RENESAS 瑞萨	RENESAS
NP80N055NHE-S18-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T	NEC 瑞萨	NEC
NP80N055NLE	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4	NEC 瑞萨	NEC

NP80N055产品属性

类型
描述
型号
NP80N055
制造商
NEC
制造商全称
NEC
功能描述
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NP80N055供应商更多...

更新时间：2025-8-12 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	NP80N055	NEC	24+	NA/	2000	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市高捷芯城科技有限公司	NP80N055PDG-E1B-AY	RENESAS(瑞萨)/IDT	24+	TO263	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市凌旭科技有限公司	NP80N055KLE	NEC	2016+	TO263	6000	公司只做原装,假一罚十,可开17%增值税发票!	询价
深圳市纳艾斯科技有限公司	NP80N055MLE-S18-AY	R	24+	TO-220	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
中天科工半导体（深圳）有限公司	NP80N055KHE-E1-AY	RENESAS	20+	TO-251	19570	原装优势主营型号-可开原型号增税票	询价
深圳市金芯世纪电子有限公司	NP80N055PDG	RENESAS/瑞萨	22+	TO-263	100000	代理渠道/只做原装/可含税	询价
深圳市正纳电子有限公司	NP80N055KLE-E1-AY	RENESAS/瑞萨	/ROHS.original	原封	22102	电子元件,供应 -正纳电子/ 元器件IC -MOS -MCU.	询价
深圳市星辰微电科技有限公司	NP80N055NHE	RENESAS/瑞萨	22+	TO-262	12500	瑞萨全系列在售,终端可出样品	询价
深圳市威雅利发展有限公司	NP80N055KHE	RENESAS	21+	TO263	10026	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市富利微电子科技有限公司	NP80N055KHE-E1-AY	RENESAS/瑞萨	24+	TO-251	30000	房间原装现货特价热卖,有单详谈	询价

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NP80N055芯片相关品牌

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DdatasheetPDF页码索引

NP16N06QLK-E1-AY 瑞智芯只有原装

NP90N04NUK-S18-AY 瑞智芯只有原装

NOSE687M002R0060 深圳市得捷芯城电子科技 AVX KEMET 尼康三洋钽电容代理商