型号 功能描述 生产厂家&企业 LOGO 操作
NP80N055KLE

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4

NEC

瑞萨

NP80N055KLE

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900

RENESAS

瑞萨

NP80N055KLE

Product Scout Automotive

文件:5.67799 Mbytes Page:6 Pages

RENESAS

瑞萨

NP80N055KLE

SWITCHING N-CHANNEL POWER MOS FET

文件:225.97 Kbytes Page:10 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

文件:79.49 Kbytes Page:8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) RDS(on)3 = 15 mΩ MAX. (VGS = 4.5 V, ID = 40 A) • Low input capacitance Ciss = 2900

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 4

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件:225.97 Kbytes Page:10 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件:225.97 Kbytes Page:10 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF TYP. • Built-in gate protection diode

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. FEATURES • Channel temperature 175 degree rated • Super low on-state resistance RDS(on) = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) • Low input capacitance Ciss = 2400 pF T

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

文件:79.49 Kbytes Page:8 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

文件:79.49 Kbytes Page:8 Pages

NEC

瑞萨

NP80N055KLE产品属性

  • 类型

    描述

  • 型号

    NP80N055KLE

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

更新时间:2025-8-11 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
24+
NA/
50
优势代理渠道,原装正品,可全系列订货开增值税票
NEC
2016+
TO263
6000
公司只做原装,假一罚十,可开17%增值税发票!
RENESAS/瑞萨
22+
TO-263
12500
瑞萨全系列在售,终端可出样品
RENESAS
1020+
TO-263
800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS/瑞萨
24+
TO-263
8540
只做原装正品现货或订货假一赔十!
RENESAS/瑞萨
2022+
TO-263
30000
进口原装现货供应,原装 假一罚十
RENESAS/瑞萨
22+
TO-263
9000
专业配单,原装正品假一罚十,代理渠道价格优
NEC
22+
TO263
12245
现货,原厂原装假一罚十!
NK/南科功率
2025+
TO-263-2
986966
国产
NEC
2020+
TO263
18600
百分百原装正品 真实公司现货库存 本公司只做原装 可

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