3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology (our WSi gate laterally diffused MOS FET) and housed in a surface mount package

SILICON POWER MOS FET

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2

SILICON POWER MOS FET

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2

SILICON POWER MOS FET

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2

3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology (our WSi gate laterally diffused MOS FET) and housed in a surface mount package

NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION NECs NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NECs NEWMOS technology (NECs 0.6 μm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver

SILICON POWER MOS FET

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology

SILICON POWER MOS FET

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology

SILICON POWER MOS FET

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology

NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION NECs NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NECs NEWMOS technology (NECs 0.6 μm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver

LVDT signal conditioner

DESCRIPTION The NE/SA/SE5521 is a signal conditioning circuit for use with Linear Variable Differential Transformers (LVDTs) and Rotary Variable Differential Transformers (RVDTs). The chip includes a low distortion, amplitude-stable sine wave oscillator with programmable frequency to drive the

LVDT signal conditioner

DESCRIPTION The NE/SA/SE5521 is a signal conditioning circuit for use with Linear Variable Differential Transformers (LVDTs) and Rotary Variable Differential Transformers (RVDTs). The chip includes a low distortion, amplitude-stable sine wave oscillator with programmable frequency to drive the

LVDT signal conditioner

DESCRIPTION The NE/SA/SE5521 is a signal conditioning circuit for use with Linear Variable Differential Transformers (LVDTs) and Rotary Variable Differential Transformers (RVDTs). The chip includes a low distortion, amplitude-stable sine wave oscillator with programmable frequency to drive the

SILICON POWER MOS FET

3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS

SILICON POWER MOS FET

3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS

SILICON POWER MOS FET

3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS

SILICON POWER MOS FET

3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS (Family Radio Service). Dies are manufactured using ou

SILICON POWER MOS FET

3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS (Family Radio Service). Dies are manufactured using ou

SILICON POWER MOS FET

3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V FRS (Family Radio Service). Dies are manufactured using ou

NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

文件：166.31 Kbytes Page：7 Pages

NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

文件：166.31 Kbytes Page：7 Pages

NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET

包装：盒 描述：EVAL BOARD NE5520379A 开发板，套件，编程器 射频评估和开发套件，开发板

封装/外壳：4-SMD，扁平引线 包装：托盘 描述：FET RF 15V 915MHZ 79A-PKG 分立半导体产品 晶体管 - FET，MOSFET - 射频

LVDT signal conditioner

LVDT signal conditioner

NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET

文件：495.06 Kbytes Page：9 Pages

3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS

文件：605.16 Kbytes Page：7 Pages

3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS

文件：605.16 Kbytes Page：7 Pages

3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS

文件：605.16 Kbytes Page：7 Pages

3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS

文件：605.16 Kbytes Page：7 Pages

NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET

文件：495.06 Kbytes Page：9 Pages

3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS

文件：68.5 Kbytes Page：9 Pages

3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS

文件：68.5 Kbytes Page：9 Pages

3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS

文件：68.5 Kbytes Page：9 Pages

(22.2 mm) Three Turn Wirewound Upper Grade Precision Potentiometer

FEATURES • Large range of ohmic values: 5  to 20 k • Bushing mount or servo mount designs are available • Gangable up to 3 sections • Extra taps available upon request

PISTON SEALS

DESCRIPTION The BECA 552M profile is a double acting composite piston seal composed of a filled PTFE friction ring with oil passages and a flexible pre-tightened rubber ring. It meets the standards MIL-G-5514F and AS4716. APPLICATIONS Actuators Brakes systems Flight controls Engine

PECL Output

文件：133.92 Kbytes Page：2 Pages

Wide Input Range, 5W Single & Dual Output DC/DC Converters

文件：164.75 Kbytes Page：2 Pages

TO-8 CASCADABLE AMPLIFIER

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