DESCRIPTION

NECs NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NECs NEWMOS technology (NECs 0.6 μm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 35.5 dBm output power at 915 MHz and 3.2 V, or 34.6 dBm output power at 2.8 V by varying the gate voltage as a power control function.

FEATURES

• LOW COST PLASTIC SURFACE MOUNT PACKAGE

• HIGH OUTPUT POWER: +35.5 dBm TYP

• HIGH LINEAR GAIN: 16 dB TYP @ 915 MHz

• HIGH POWER ADDED EFFICIENCY: 65 TYP @ VDS = 3.2 V, f = 915 MHz

• SINGLE SUPPLY: 2.8 to 6.0 V

• CLASS AB OPERATION

• SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX

APPLICATIONS

• DIGITAL CELLULAR PHONES: 3.2 V GSM900/DCS 1800 Dual Band Handsets

• OTHERS:

Two-Way Pagers

Retail Business Radio

Special Mobile Radio

Short Range Wireless