型号 功能描述 生产厂家 企业 LOGO 操作
NE5520279A-T1-A

3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology (our WSi gate laterally diffused MOS FET) and housed in a surface mount package

CEL

SILICON POWER MOS FET

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2

RENESAS

瑞萨

NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET

文件:166.31 Kbytes Page:7 Pages

NEC

瑞萨

SILICON POWER MOS FET

3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2

RENESAS

瑞萨

NE5520279A-T1-A产品属性

  • 类型

    描述

  • 型号

    NE5520279A-T1-A

  • 功能描述

    射频MOSFET电源晶体管 L/S Band Med Power

  • RoHS

  • 制造商

    Freescale Semiconductor

  • 配置

    Single

  • 频率

    1800 MHz to 2000 MHz

  • 增益

    27 dB

  • 输出功率

    100 W

  • 封装/箱体

    NI-780-4

  • 封装

    Tray

更新时间:2026-2-6 10:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NEC
25+
SMD
10000
原装现货假一罚十
NEC
2450+
SMT-86
6540
只做原装正品假一赔十为客户做到零风险!!
NEC
2023+
LD-MOS
50000
原装现货
RENESAS
24+
LD-MOS
5000
十年沉淀唯有原装
Renesas
21+
-
20
只做原装鄙视假货15118075546
Renesas(瑞萨)
24+
标准封装
9428
支持大陆交货,美金交易。原装现货库存。
NEC
2023+
3
RENESAS
25+23+
NA
25249
绝对原装正品全新进口深圳现货
07
2022+
1000
全新原装 货期两周
NEC
0746+
900
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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