3.0 V OPERATION SILICON RF POWER LDMOS FET

FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS

DESCRIPTION

The NE552R679A is an N-channel silicon power laterally diffused MOS FET specially designed as the

transmission power amplifier for 3.0 V FRS (Family Radio Service). Dies are manufactured using our NEWMOS2

technology (our WSi gate laterally diffused MOS FET) and housed in a surface mount package. This device can

deliver 28.0 dBm output power with 60 power added efficiency at 460 MHz under the 3.0 V supply voltage.

FEATURES

• High output power : Pout = 28.0 dBm TYP. (VDS = 3.0 V, IDset = 300 mA, f = 460 MHz, Pin = 15 dBm)

• High power added efficiency : ηadd = 60 TYP. (VDS = 3.0 V, IDset = 300 mA, f = 460 MHz, Pin = 15 dBm)

• High linear gain : GL = 20 dB TYP. (VDS = 3.0 V, IDset = 300 mA, f = 460 MHz, Pin = 5 dBm)

• Surface mount package : 5.7 × 5.7 × 1.1 mm MAX.

• Single supply : VDS = 2.8 to 6.0 V