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NE55价格
参考价格：￥5.8503
型号：NE5517DG 品牌：ON 备注：这里有NE55多少钱，2026年最近7天走势，今日出价，今日竞价，NE55批发/采购报价，NE55行情走势销售排行榜，NE55报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NE55 | PRECISION TIMERS Description These devices are precision timing circuits capable of producing accurate time delays or oscillation. In the time delay or monostable mode of operation, the timed interval is controlled by a single external resistor and capacitor network. In the astable mode of operation, the frequenc | DIODES 美台半导体 |   | |
NE55 | Internally Compensated Dual Low Noise Operational Amplifier 文件：170.42 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | |
丝印代码：NE5532AP；NE5532x, SA5532x Dual Low-Noise Operational Amplifiers 1 Features 1• Equivalent Input Noise Voltage: 5 nV/√Hz Typ at 1 kHz • Unity-Gain Bandwidth: 10 MHz Typ • Common-Mode Rejection Ratio: 100 dB Typ • High DC Voltage Gain: 100 V/mV Typ input• Peak-to-Peak Output Voltage Swing 26 V Typ With VCC± = ±15 V and RL = 600 Ω • High Slew Rate: 9 V/μs | TI 德州仪器 | | ||
丝印代码：NE5532AP；NE5532x, SA5532x Dual Low-Noise Operational Amplifiers 1 Features 1• Equivalent Input Noise Voltage: 5 nV/√Hz Typ at 1 kHz • Unity-Gain Bandwidth: 10 MHz Typ • Common-Mode Rejection Ratio: 100 dB Typ • High DC Voltage Gain: 100 V/mV Typ input• Peak-to-Peak Output Voltage Swing 26 V Typ With VCC± = ±15 V and RL = 600 Ω • High Slew Rate: 9 V/μs | TI 德州仪器 | | ||
丝印代码：NE5532AP；NE5532x, SA5532x Dual Low-Noise Operational Amplifiers 1 Features 1• Equivalent Input Noise Voltage: 5 nV/√Hz Typ at 1 kHz • Unity-Gain Bandwidth: 10 MHz Typ • Common-Mode Rejection Ratio: 100 dB Typ • High DC Voltage Gain: 100 V/mV Typ input• Peak-to-Peak Output Voltage Swing 26 V Typ With VCC± = ±15 V and RL = 600 Ω • High Slew Rate: 9 V/μs | TI 德州仪器 | | ||
丝印代码：NE5532AP；NE5532x, SA5532x Dual Low-Noise Operational Amplifiers 1 Features 1• Equivalent Input Noise Voltage: 5 nV/√Hz Typ at 1 kHz • Unity-Gain Bandwidth: 10 MHz Typ • Common-Mode Rejection Ratio: 100 dB Typ • High DC Voltage Gain: 100 V/mV Typ input• Peak-to-Peak Output Voltage Swing 26 V Typ With VCC± = ±15 V and RL = 600 Ω • High Slew Rate: 9 V/μs | TI 德州仪器 | | ||
丝印代码：NE5532P；NE5532x, SA5532x Dual Low-Noise Operational Amplifiers 1 Features 1• Equivalent Input Noise Voltage: 5 nV/√Hz Typ at 1 kHz • Unity-Gain Bandwidth: 10 MHz Typ • Common-Mode Rejection Ratio: 100 dB Typ • High DC Voltage Gain: 100 V/mV Typ input• Peak-to-Peak Output Voltage Swing 26 V Typ With VCC± = ±15 V and RL = 600 Ω • High Slew Rate: 9 V/μs | TI 德州仪器 | | ||
丝印代码：NE5532P；NE5532x, SA5532x Dual Low-Noise Operational Amplifiers 1 Features 1• Equivalent Input Noise Voltage: 5 nV/√Hz Typ at 1 kHz • Unity-Gain Bandwidth: 10 MHz Typ • Common-Mode Rejection Ratio: 100 dB Typ • High DC Voltage Gain: 100 V/mV Typ input• Peak-to-Peak Output Voltage Swing 26 V Typ With VCC± = ±15 V and RL = 600 Ω • High Slew Rate: 9 V/μs | TI 德州仪器 | | ||
丝印代码：NE5532P；NE5532x, SA5532x Dual Low-Noise Operational Amplifiers 1 Features 1• Equivalent Input Noise Voltage: 5 nV/√Hz Typ at 1 kHz • Unity-Gain Bandwidth: 10 MHz Typ • Common-Mode Rejection Ratio: 100 dB Typ • High DC Voltage Gain: 100 V/mV Typ input• Peak-to-Peak Output Voltage Swing 26 V Typ With VCC± = ±15 V and RL = 600 Ω • High Slew Rate: 9 V/μs | TI 德州仪器 | | ||
丝印代码：NE5532P；NE5532x, SA5532x Dual Low-Noise Operational Amplifiers 1 Features 1• Equivalent Input Noise Voltage: 5 nV/√Hz Typ at 1 kHz • Unity-Gain Bandwidth: 10 MHz Typ • Common-Mode Rejection Ratio: 100 dB Typ • High DC Voltage Gain: 100 V/mV Typ input• Peak-to-Peak Output Voltage Swing 26 V Typ With VCC± = ±15 V and RL = 600 Ω • High Slew Rate: 9 V/μs | TI 德州仪器 | | ||
丝印代码：NE5534AP；NE5534x, SA5534x Low-Noise Operational Amplifiers 1 Features 1• Equivalent Input Noise Voltage 3.5 nV/√Hz Typ • Unity-Gain Bandwidth 10 MHz Typ • Common-Mode Rejection Ratio 100 dB Typ output• High DC Voltage Gain 100 V/mV Typ • Peak-to-Peak Output Voltage Swing 32 V Typ With VCC± = ±18 V and RL = 600 Ω • High Slew Rate 13 V/μs Typ • Wid | TI 德州仪器 | | ||
丝印代码：NE5534AP；NE5534x, SA5534x Low-Noise Operational Amplifiers 1 Features 1• Equivalent Input Noise Voltage 3.5 nV/√Hz Typ • Unity-Gain Bandwidth 10 MHz Typ • Common-Mode Rejection Ratio 100 dB Typ output• High DC Voltage Gain 100 V/mV Typ • Peak-to-Peak Output Voltage Swing 32 V Typ With VCC± = ±18 V and RL = 600 Ω • High Slew Rate 13 V/μs Typ • Wid | TI 德州仪器 | | ||
丝印代码：NE5534；NE5534x, SA5534x Low-Noise Operational Amplifiers 1 Features 1• Equivalent Input Noise Voltage 3.5 nV/√Hz Typ • Unity-Gain Bandwidth 10 MHz Typ • Common-Mode Rejection Ratio 100 dB Typ output• High DC Voltage Gain 100 V/mV Typ • Peak-to-Peak Output Voltage Swing 32 V Typ With VCC± = ±18 V and RL = 600 Ω • High Slew Rate 13 V/μs Typ • Wid | TI 德州仪器 | | ||
丝印代码：NE5534；NE5534x, SA5534x Low-Noise Operational Amplifiers 1 Features 1• Equivalent Input Noise Voltage 3.5 nV/√Hz Typ • Unity-Gain Bandwidth 10 MHz Typ • Common-Mode Rejection Ratio 100 dB Typ output• High DC Voltage Gain 100 V/mV Typ • Peak-to-Peak Output Voltage Swing 32 V Typ With VCC± = ±18 V and RL = 600 Ω • High Slew Rate 13 V/μs Typ • Wid | TI 德州仪器 | | ||
丝印代码：NE5534；NE5534x, SA5534x Low-Noise Operational Amplifiers 1 Features 1• Equivalent Input Noise Voltage 3.5 nV/√Hz Typ • Unity-Gain Bandwidth 10 MHz Typ • Common-Mode Rejection Ratio 100 dB Typ output• High DC Voltage Gain 100 V/mV Typ • Peak-to-Peak Output Voltage Swing 32 V Typ With VCC± = ±18 V and RL = 600 Ω • High Slew Rate 13 V/μs Typ • Wid | TI 德州仪器 | | ||
丝印代码：NE5534P；NE5534x, SA5534x Low-Noise Operational Amplifiers 1 Features 1• Equivalent Input Noise Voltage 3.5 nV/√Hz Typ • Unity-Gain Bandwidth 10 MHz Typ • Common-Mode Rejection Ratio 100 dB Typ output• High DC Voltage Gain 100 V/mV Typ • Peak-to-Peak Output Voltage Swing 32 V Typ With VCC± = ±18 V and RL = 600 Ω • High Slew Rate 13 V/μs Typ • Wid | TI 德州仪器 | | ||
丝印代码：NE5534P；NE5534x, SA5534x Low-Noise Operational Amplifiers 1 Features 1• Equivalent Input Noise Voltage 3.5 nV/√Hz Typ • Unity-Gain Bandwidth 10 MHz Typ • Common-Mode Rejection Ratio 100 dB Typ output• High DC Voltage Gain 100 V/mV Typ • Peak-to-Peak Output Voltage Swing 32 V Typ With VCC± = ±18 V and RL = 600 Ω • High Slew Rate 13 V/μs Typ • Wid | TI 德州仪器 | | ||
丝印代码：NE5534P；NE5534x, SA5534x Low-Noise Operational Amplifiers 1 Features 1• Equivalent Input Noise Voltage 3.5 nV/√Hz Typ • Unity-Gain Bandwidth 10 MHz Typ • Common-Mode Rejection Ratio 100 dB Typ output• High DC Voltage Gain 100 V/mV Typ • Peak-to-Peak Output Voltage Swing 32 V Typ With VCC± = ±18 V and RL = 600 Ω • High Slew Rate 13 V/μs Typ • Wid | TI 德州仪器 | | ||
丝印代码：NE555；xx555 Precision Timers 1 Features 1• Timing From Microseconds to Hours • Astable or Monostable Operation • Adjustable Duty Cycle • TTL-Compatible Output Can Sink or Source Up to 200 mA • On Products Compliant to MIL-PRF-38535, All Parameters Are Tested Unless Otherwise Noted. On All Other Products, Production P | TI 德州仪器 | | ||
丝印代码：NE555；xx555 Precision Timers 1 Features 1• Timing From Microseconds to Hours • Astable or Monostable Operation • Adjustable Duty Cycle • TTL-Compatible Output Can Sink or Source Up to 200 mA • On Products Compliant to MIL-PRF-38535, All Parameters Are Tested Unless Otherwise Noted. On All Other Products, Production P | TI 德州仪器 | | ||
丝印代码：NE555；xx555 Precision Timers 1 Features 1• Timing From Microseconds to Hours • Astable or Monostable Operation • Adjustable Duty Cycle • TTL-Compatible Output Can Sink or Source Up to 200 mA • On Products Compliant to MIL-PRF-38535, All Parameters Are Tested Unless Otherwise Noted. On All Other Products, Production P | TI 德州仪器 | | ||
丝印代码：NE555；xx555 Precision Timers 1 Features 1• Timing From Microseconds to Hours • Astable or Monostable Operation • Adjustable Duty Cycle • TTL-Compatible Output Can Sink or Source Up to 200 mA • On Products Compliant to MIL-PRF-38535, All Parameters Are Tested Unless Otherwise Noted. On All Other Products, Production P | TI 德州仪器 | | ||
丝印代码：NE555P；xx555 Precision Timers 1 Features 1• Timing From Microseconds to Hours • Astable or Monostable Operation • Adjustable Duty Cycle • TTL-Compatible Output Can Sink or Source Up to 200 mA • On Products Compliant to MIL-PRF-38535, All Parameters Are Tested Unless Otherwise Noted. On All Other Products, Production P | TI 德州仪器 | | ||
丝印代码：NE555P；xx555 Precision Timers 1 Features 1• Timing From Microseconds to Hours • Astable or Monostable Operation • Adjustable Duty Cycle • TTL-Compatible Output Can Sink or Source Up to 200 mA • On Products Compliant to MIL-PRF-38535, All Parameters Are Tested Unless Otherwise Noted. On All Other Products, Production P | TI 德州仪器 | | ||
丝印代码：NE556；Universal dual channel precision timer Low turn-off time The maximum operating frequency is greater than 500kHz. Time ranges from microseconds to several hours. There are two working modes: the intermediate steady state and the monostable state. High output current source or sink 200mA current Adjustable duty cycle TTL compatibil | UMW 友台半导体 | | ||
丝印代码：NE556；Universal dual channel precision timer Low turn-off time The maximum operating frequency is greater than 500kHz. Time ranges from microseconds to several hours. There are two working modes: the intermediate steady state and the monostable state. High output current source or sink 200mA current Adjustable duty cycle TTL compatibil | UMW 友台半导体 | | ||
丝印代码：NE555；PRECISION TIMERS 文件：787.82 Kbytes Page：18 Pages | ARTSCHIP | | ||
丝印代码：NE555；Precision Timers 文件：1.55424 Mbytes Page：36 Pages | TI 德州仪器 | | ||
丝印代码：NE555；Precision Timers 文件：1.55424 Mbytes Page：36 Pages | TI 德州仪器 | | ||
丝印代码：NE555；Precision Timers 文件：1.55424 Mbytes Page：36 Pages | TI 德州仪器 | | ||
丝印代码：NE555；PRECISION TIMERS 文件：787.82 Kbytes Page：18 Pages | ARTSCHIP | | ||
丝印代码：NE555；Precision Timers 文件：1.55424 Mbytes Page：36 Pages | TI 德州仪器 | | ||
丝印代码：NE555；Precision Timers 文件：1.55424 Mbytes Page：36 Pages | TI 德州仪器 | | ||
丝印代码：NE555P；Precision Timers 文件：1.55424 Mbytes Page：36 Pages | TI 德州仪器 | | ||
丝印代码：NE555P；PRECISION TIMERS 文件：787.82 Kbytes Page：18 Pages | ARTSCHIP | | ||
丝印代码：NE555P；Precision Timers 文件：1.55424 Mbytes Page：36 Pages | TI 德州仪器 | | ||
丝印代码：V1；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology | RENESAS 瑞萨 | | ||
丝印代码：V1；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology | RENESAS 瑞萨 | | ||
丝印代码：V1；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology | RENESAS 瑞萨 | | ||
丝印代码：V1；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS | RENESAS 瑞萨 | | ||
丝印代码：R1；SILICON POWER MOS FET 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS | RENESAS 瑞萨 | | ||
丝印代码：V2；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS | RENESAS 瑞萨 | | ||
丝印代码：V2；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS | RENESAS 瑞萨 | | ||
丝印代码：V2；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS | RENESAS 瑞萨 | | ||
丝印代码：V2；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS | RENESAS 瑞萨 | | ||
丝印代码：V4；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate lat | RENESAS 瑞萨 | | ||
丝印代码：V4；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate lat | RENESAS 瑞萨 | | ||
丝印代码：V4；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate lat | RENESAS 瑞萨 | | ||
丝印代码：V4；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate lat | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET 3.5 V OPERATION SILICON RF POWER LDMOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi | RENESAS 瑞萨 | | ||
丝印代码：R4；SILICON POWER MOS FET 3.5 V OPERATION SILICON RF POWER LDMOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 | RENESAS 瑞萨 | | ||
丝印代码：W2；SILICON POWER MOS FET 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS | RENESAS 瑞萨 | | ||
丝印代码：W3；SILICON POWER MOS FET 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS | RENESAS 瑞萨 | | ||
丝印代码：W3；SILICON POWER MOS FET 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS | RENESAS 瑞萨 | | ||
Dual high-performance operational amplifier DESCRIPTION The 5512 series of high-performance operational amplifiers provides very good input characteristics. These amplifiers feature low input bias and voltage characteristics such as a 108 op amp with improved CMRR and a high differential input voltage limit achieved through the use of a | PHILIPS 飞利浦 | | ||
Dual high-performance operational amplifier DESCRIPTION The 5512 series of high-performance operational amplifiers provides very good input characteristics. These amplifiers feature low input bias and voltage characteristics such as a 108 op amp with improved CMRR and a high differential input voltage limit achieved through the use of a | PHILIPS 飞利浦 | | ||
Dual high-performance operational amplifier DESCRIPTION The 5512 series of high-performance operational amplifiers provides very good input characteristics. These amplifiers feature low input bias and voltage characteristics such as a 108 op amp with improved CMRR and a high differential input voltage limit achieved through the use of a | PHILIPS 飞利浦 | |
| 替换型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
WILMAR,Protective Relays - 700 Series | MACOM | MACOM | | |
Voltage Regulators Adjustable from 2V to 37V at Output Currents Up to 150mA Without External Pass Transistors | HARRIS | HARRIS | | |
Voltage Regulators Adjustable from 2V to 37V at Output Currents Up to 150mA Without External Pass Transistors | HARRIS | HARRIS | | |
Voltage Regulator | NSC 国半 | NSC | | |
HIGH PRECISION VOLTAGE REGULATOR | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
High precision voltage regulator | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
VOLTAGE REGULATOR | MOTOROLA 摩托罗拉 | MOTOROLA | | |
VOLTAGE REGULATOR | MOTOROLA 摩托罗拉 | MOTOROLA | | |
VOLTAGE REGULATOR | ONSEMI 安森美半导体 | ONSEMI | | |
Integrated Circuit Precision Voltage Regulator | NTE | NTE | | |
Precision voltage regulator | PHILIPS 飞利浦 | PHILIPS | |
NE55产品属性
- 类型
描述
- 型号
NE55
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
SILICON POWER MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
15+ |
SOP8 |
50000 |
原装现货 |
|||
TI |
24+ |
SOIC-8 |
12000 |
原厂原装渠道刚到新货假一罚十 |
|||
PHI |
25+ |
DIP16 |
13800 |
原装,请咨询 |
|||
TI/德州仪器 |
25+ |
SOIC-8150mil |
36000 |
TI/德州仪器全新特价NE555DR即刻询购立享优惠#长期有货 |
|||
Renesas(瑞萨) |
24+ |
标准封装 |
7268 |
支持大陆交货,美金交易。原装现货库存。 |
|||
TI |
2026+ |
DIP-8 |
20302 |
原装正品现货热销中,价格优惠,可出售样品!支持省内代 |
|||
TI |
19+ |
DIP |
21000 |
||||
TI |
04+ |
DIP-8B |
62000 |
原装正品现货优势18 |
|||
ST/意法 |
24+ |
SOP |
90125 |
郑重承诺只做原装进口现货 |
|||
TI |
24+ |
SOP8 |
65000 |
一级代理/放心购买 |
NE55芯片相关品牌
NE55规格书下载地址
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NE55数据表相关新闻
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NE3512S02-T1D，全新原装当天发货或门市自取0755-82732291，
2019-3-22
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