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NE55价格
参考价格：￥5.8503
型号：NE5517DG 品牌：ON 备注：这里有NE55多少钱，2025年最近7天走势，今日出价，今日竞价，NE55批发/采购报价，NE55行情走势销售排行榜，NE55报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NE55 | PRECISION TIMERS Description These devices are precision timing circuits capable of producing accurate time delays or oscillation. In the time delay or monostable mode of operation, the timed interval is controlled by a single external resistor and capacitor network. In the astable mode of operation, the frequenc | DIODES 美台半导体 |   | |
NE55 | Internally Compensated Dual Low Noise Operational Amplifier 文件：170.42 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | |
SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR DCS1800/PCS1900 HANDSETS | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate lat | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate lat | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate lat | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR GSM CLASS 4 HANDSETS DESCRIPTION The NE5500434 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for GSM class 4 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate lat | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET 3.5 V OPERATION SILICON RF POWER LDMOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET 3.5 V OPERATION SILICON RF POWER LDMOS FET FOR 900 MHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5500479A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for cellular handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET 4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS | RENESAS 瑞萨 | | ||
Dual high-performance operational amplifier DESCRIPTION The 5512 series of high-performance operational amplifiers provides very good input characteristics. These amplifiers feature low input bias and voltage characteristics such as a 108 op amp with improved CMRR and a high differential input voltage limit achieved through the use of a | Philips 飞利浦 | | ||
Dual high-performance operational amplifier DESCRIPTION The 5512 series of high-performance operational amplifiers provides very good input characteristics. These amplifiers feature low input bias and voltage characteristics such as a 108 op amp with improved CMRR and a high differential input voltage limit achieved through the use of a | Philips 飞利浦 | | ||
Dual high-performance operational amplifier DESCRIPTION The 5512 series of high-performance operational amplifiers provides very good input characteristics. These amplifiers feature low input bias and voltage characteristics such as a 108 op amp with improved CMRR and a high differential input voltage limit achieved through the use of a | Philips 飞利浦 | | ||
Quad high-performance operational amplifier DESCRIPTION The NE/SE5514 family of quad operational amplifiers sets new standards in bipolar quad amplifier performance. The amplifiers feature low input bias current and low offset voltages. Pinout is identical to LM324/LM348 which facilitates direct product substitution for improved system per | Philips 飞利浦 | | ||
Quad high-performance operational amplifier DESCRIPTION The NE/SE5514 family of quad operational amplifiers sets new standards in bipolar quad amplifier performance. The amplifiers feature low input bias current and low offset voltages. Pinout is identical to LM324/LM348 which facilitates direct product substitution for improved system per | Philips 飞利浦 | | ||
Quad high-performance operational amplifier DESCRIPTION The NE/SE5514 family of quad operational amplifiers sets new standards in bipolar quad amplifier performance. The amplifiers feature low input bias current and low offset voltages. Pinout is identical to LM324/LM348 which facilitates direct product substitution for improved system per | Philips 飞利浦 | | ||
Dual operational transconductance amplifier DESCRIPTION The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit p | Philips 飞利浦 | | ||
Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit performance is | ONSEMI 安森美半导体 | | ||
Dual operational transconductance amplifier DESCRIPTION The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit p | Philips 飞利浦 | | ||
Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit performance is | ONSEMI 安森美半导体 | | ||
Dual operational transconductance amplifier DESCRIPTION The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit p | Philips 飞利浦 | | ||
Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit performance is | ONSEMI 安森美半导体 | | ||
Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit performance is | ONSEMI 安森美半导体 | | ||
Dual operational transconductance amplifier DESCRIPTION The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit p | Philips 飞利浦 | | ||
Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit performance is | ONSEMI 安森美半导体 | | ||
Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit performance is | ONSEMI 安森美半导体 | | ||
Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit performance is | ONSEMI 安森美半导体 | | ||
Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit performance is | ONSEMI 安森美半导体 | | ||
Dual operational transconductance amplifier DESCRIPTION The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit p | Philips 飞利浦 | | ||
Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit performance is | ONSEMI 安森美半导体 | | ||
Dual Operational Transconductance Amplifier The AU5517 and NE5517 contain two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The AU5517/NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications. Circuit performance is | ONSEMI 安森美半导体 | | ||
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology (our WSi gate laterally diffused MOS FET) and housed in a surface mount package | CEL | | ||
SILICON POWER MOS FET 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 | RENESAS 瑞萨 | | ||
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology (our WSi gate laterally diffused MOS FET) and housed in a surface mount package | CEL | | ||
NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET DESCRIPTION NECs NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NECs NEWMOS technology (NECs 0.6 μm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver | CEL | | ||
SILICON POWER MOS FET 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 3.2 V GSM 900 handsets. Dies are manufactured using our NEWMOS technology | RENESAS 瑞萨 | | ||
NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET DESCRIPTION NECs NE5520379A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 3.2 V GSM900 handsets. Die are manufactured using NECs NEWMOS technology (NECs 0.6 μm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver | CEL | | ||
LVDT signal conditioner DESCRIPTION The NE/SA/SE5521 is a signal conditioning circuit for use with Linear Variable Differential Transformers (LVDTs) and Rotary Variable Differential Transformers (RVDTs). The chip includes a low distortion, amplitude-stable sine wave oscillator with programmable frequency to drive the | Philips 飞利浦 | | ||
LVDT signal conditioner DESCRIPTION The NE/SA/SE5521 is a signal conditioning circuit for use with Linear Variable Differential Transformers (LVDTs) and Rotary Variable Differential Transformers (RVDTs). The chip includes a low distortion, amplitude-stable sine wave oscillator with programmable frequency to drive the | Philips 飞利浦 | | ||
LVDT signal conditioner DESCRIPTION The NE/SA/SE5521 is a signal conditioning circuit for use with Linear Variable Differential Transformers (LVDTs) and Rotary Variable Differential Transformers (RVDTs). The chip includes a low distortion, amplitude-stable sine wave oscillator with programmable frequency to drive the | Philips 飞利浦 | | ||
SILICON POWER MOS FET 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS | RENESAS 瑞萨 | | ||
SILICON POWER MOS FET 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS | RENESAS 瑞萨 | |
| 替换型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
WILMAR,Protective Relays - 700 Series | MACOM | MACOM | | |
Voltage Regulators Adjustable from 2V to 37V at Output Currents Up to 150mA Without External Pass Transistors | HARRIS | HARRIS | | |
Voltage Regulators Adjustable from 2V to 37V at Output Currents Up to 150mA Without External Pass Transistors | HARRIS | HARRIS | | |
Voltage Regulator | NSC 国半 | NSC | | |
HIGH PRECISION VOLTAGE REGULATOR | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
High precision voltage regulator | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | | |
VOLTAGE REGULATOR | Motorola 摩托罗拉 | Motorola | | |
VOLTAGE REGULATOR | Motorola 摩托罗拉 | Motorola | | |
VOLTAGE REGULATOR | ONSEMI 安森美半导体 | ONSEMI | | |
Integrated Circuit Precision Voltage Regulator | NTE | NTE | | |
Precision voltage regulator | Philips 飞利浦 | Philips | |
NE55产品属性
- 类型
描述
- 型号
NE55
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
SILICON POWER MOS FET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI |
24+ |
SOP8 |
65000 |
一级代理/放心购买 |
|||
TI/德州仪器 |
25+ |
SOIC-8150mil |
36000 |
TI/德州仪器全新特价NE555DR即刻询购立享优惠#长期有货 |
|||
TI |
2021+ |
SOP8 |
16890 |
||||
TI |
19+ |
DIP |
21000 |
||||
TI |
23+ |
DIP |
8600 |
受权代理!全新原装现货特价热卖! |
|||
Renesas(瑞萨) |
24+ |
标准封装 |
7268 |
支持大陆交货,美金交易。原装现货库存。 |
|||
TI |
25+23+ |
SOP-8 |
50000 |
全新原装公司.柜台现货.特价热卖!绝对原装正品全新进口深圳现货
|
|||
ST/意法 |
24+ |
SOP |
90125 |
郑重承诺只做原装进口现货 |
|||
TI |
24+ |
SOIC-8 |
12000 |
原厂原装渠道刚到新货假一罚十 |
|||
ST/TI |
2017+ |
SOP-8/DIP |
28530 |
100%进口原装现货库存!特价热卖!假一赔十! |
NE55芯片相关品牌
NE55规格书下载地址
NE55参数引脚图相关
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NE55数据表相关新闻
NE5532ADR
NE5532ADR
2023-4-14NE5532DRG4 TI/德州仪器 21+ SOP8
https://hfx03.114ic.com/
2022-2-19NE5532DR原装热卖库存
型号： NE5532DR 制造商 Texas Instruments 制造商零件编号 NE5532DR 描述 IC OPAMP GP 2 CIRCUIT 8SOIC 对无铅要求的达标情况/对限制有害物质指令(RoHS)规范的达标情况 无铅/符合限制有害物质指令(RoHS3)规范要求 ?湿气敏感性等级 （MSL） 1（无限） 详细描述 通用-放大
2021-12-6NE3512S02-T1DNE3512S02-T1C
NE3512S02-T1C，全新原装当天发货或门市自取0755-82732291. NE3512S02-T1D
2019-12-17NE3512S02-T1D
NE3512S02-T1D，全新原装当天发货或门市自取0755-82732291.
2019-12-17NE3512S02-T1D
NE3512S02-T1D，全新原装当天发货或门市自取0755-82732291，
2019-3-22
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