型号 功能描述 生产厂家&企业 LOGO 操作
NE5510279A

SILICON POWER MOS FET

4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using our NEWMOS technology (our 0.6

RENESAS

瑞萨

NE5510279A

3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS

文件:39.5 Kbytes Page:5 Pages

NEC

瑞萨

NE5510279A

3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS

文件:42.44 Kbytes Page:5 Pages

CEL

California Eastern Labs

SILICON POWER MOS FET

4.8 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 4.8 V GSM 1 800 handsets. Dies are manufactured using our NEWMOS technology (our 0.6

RENESAS

瑞萨

3.5V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS

文件:39.5 Kbytes Page:5 Pages

NEC

瑞萨

3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS

文件:42.44 Kbytes Page:5 Pages

CEL

California Eastern Labs

3.5 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 TRANSMISSION AMPLIFIERS

文件:390.95 Kbytes Page:4 Pages

NEC

瑞萨

NE5510279A产品属性

  • 类型

    描述

  • 型号

    NE5510279A

  • 制造商

    Renesas Electronics Corporation

  • 功能描述

    RF POWER TRANSISTOR LDMOS

更新时间:2025-8-8 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
RENESAS(瑞萨)/IDT
24+
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
RENESAS/瑞萨
24+
NA/
156
优势代理渠道,原装正品,可全系列订货开增值税票
RENESAS
24+
SMD
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
RENESAS/瑞萨
22+
PW-X79A
100000
代理渠道/只做原装/可含税
NEC
24+
SMD
3000
全新原装现货 优势库存
RENESAS
23+
SMD
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
RENESAS(瑞萨)/IDT
20+
-
1000
RENESAS
1836+
79A
9852
只做原装正品现货!或订货假一赔十!
RENESAS
24+
79A
13500
免费送样原盒原包现货一手渠道联系
RENESAS
24+
79A
8000
原装,正品

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