4.8 V OPERATION SILICON RF POWER LDMOS FET

FOR 1.8 GHz 2 W TRANSMISSION AMPLIFIERS

DESCRIPTION

The NE5510279A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

for 4.8 V GSM 1 800 handsets. Dies are manufactured using our NEWMOS technology (our 0.6 μm WSi gate

laterally diffused MOS FET) and housed in a surface mount package. The device can deliver 33.0 dBm output power

with 47 power added efficiency at 1.8 GHz under the 4.8 V supply voltage.

FEATURES

• High output power : Pout = 35.5 dBm TYP. (VDS = 4.8 V, IDset = 300 mA, f = 900 MHz, Pin = 25 dBm)

: Pout = 33.0 dBm TYP. (VDS = 4.8 V, IDset = 300 mA, f = 1.8 GHz, Pin = 25 dBm)

• High power added efficiency : ηadd = 65 TYP. (VDS = 4.8 V, IDset = 300 mA, f = 900 MHz, Pin = 25 dBm)

: ηadd = 47 TYP. (VDS = 4.8 V, IDset = 300 mA, f = 1.8 GHz, Pin = 25 dBm)

• High linear gain : GL = 16.0 dB TYP. (VDS = 4.8 V, IDset = 300 mA, f = 900 MHz, Pin = 10 dBm)

: GL = 10.0 dB TYP. (VDS = 4.8 V, IDset = 300 mA, f = 1.8 GHz, Pin = 10 dBm)

• Surface mount package : 5.7 × 5.7 × 1.1 mm MAX.

• Single supply : VDS = 3.0 to 8.0 V