| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NE5500134 | 丝印代码：V1；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology | RENESAS 瑞萨 |   | |
丝印代码：V1；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology | RENESAS 瑞萨 | | ||
丝印代码：V1；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology | RENESAS 瑞萨 | | ||
丝印代码：V1；SILICON POWER MOS FET N-CHANNEL SILICON POWER MOS FET POWER AMPLIFIER FOR 0.8 TO 2.0 GHz CELLULAR HANDSETS DESCRIPTION The NE5500134 is an N-channel silicon power MOS FET specially designed as the transmission power amplifier for 0.8 to 2.0 GHz cellular handsets. Dies are manufactured using our NEWMOS technology | RENESAS 瑞萨 | | ||
RF & Microwave device | RENESAS 瑞萨 | | ||
RF & Microwave device 文件：137.58 Kbytes Page：2 Pages | RENESAS 瑞萨 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
22+ |
SOT-89 |
20000 |
只做原装 |
|||
NEC |
23+ |
SOT-89 |
50000 |
原装正品 支持实单 |
|||
RENESAS/瑞萨 |
23+ |
SOT-89 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
NEC |
24+ |
SOT-89 |
12200 |
新进库存/原装 |
|||
NEC |
19+ |
SOD-89 |
200000 |
||||
NEC |
新年份 |
SOD-89 |
18000 |
原装正品大量现货,要多可发货,实单带接受价来谈! |
|||
NEC |
24+ |
SOT-89 |
9600 |
原装现货,优势供应,支持实单! |
|||
RENESAS/瑞萨 |
2450+ |
SOT89 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
NEC |
2025+ |
SOD-89 |
5000 |
原装进口价格优 请找坤融电子! |
|||
NEC |
24+ |
SOD-89 |
18000 |
原装现货假一赔十 |
NE5500134芯片相关品牌
NE5500134规格书下载地址
NE5500134参数引脚图相关
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NE5500134数据表相关新闻
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型号： NE5532DR 制造商 Texas Instruments 制造商零件编号 NE5532DR 描述 IC OPAMP GP 2 CIRCUIT 8SOIC 对无铅要求的达标情况/对限制有害物质指令(RoHS)规范的达标情况 无铅/符合限制有害物质指令(RoHS3)规范要求 ?湿气敏感性等级 （MSL） 1（无限） 详细描述 通用-放大
2021-12-6NE3512S02-T1DNE3512S02-T1C
NE3512S02-T1C，全新原装当天发货或门市自取0755-82732291. NE3512S02-T1D
2019-12-17NE3512S02-T1D
NE3512S02-T1D，全新原装当天发货或门市自取0755-82732291.
2019-12-17NE3512S02-T1D
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2019-3-22
DdatasheetPDF页码索引
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