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型号	功能描述	生产厂家企业	LOGO
NAND01GW3B	512 Mbit, 1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory FEATURES SUMMARY ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 8 Gbit memory array – Up to 64Mbit spare area – Cost effective solutions for mass storage applications ■ NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities ■ SUPPLY VOLTAG	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B	USB 2.0 high-speed Flash drive controller 文件：614.48 Kbytes Page：32 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B2BN5E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2BN5F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2BN6E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2BN6F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2BZA5E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2BZA5F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2BZA6E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2BZA6F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2BZF5E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2BZF5F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2BZF6E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2BZF6F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2C	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2CN5E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2CN5F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2CN6E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2CN6F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2CZA5E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2CZA5F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2CZA6E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2CZA6F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2CZF5E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2CZF5F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2CZF6E	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2CZF6F	1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16	NUMONYX	NUMONYX
NAND01GW3B2AN1	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B2AN6	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B2AN6F	封装/外壳：48-TFSOP（0.724"，18.40mm 宽）包装：托盘描述：IC FLASH 1GBIT PARALLEL 48TSOP 集成电路（IC）存储器	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B2AN6F	IC FLASH 1G PARALLEL 48TSOP	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B2AZA1	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B2AZA6	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B2AZA6E	IC FLASH 1G PARALLEL 63VFBGA	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B2AZA6E	封装/外壳：63-TFBGA 包装：托盘描述：IC FLASH 1GBIT PARALLEL 63VFBGA 集成电路（IC）存储器	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B2AZB1	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B2AZB6	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B2B	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B2BN1	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B2BN1E	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B2BN1E	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GW3B2BN1F	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GW3B2BN1F	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B2BN6	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B2BN6E	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B2BN6E	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GW3B2BN6E.	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GW3B2BN6F	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GW3B2BN6F	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B2BZA1	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B2BZA1E	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B2BZA1E	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GW3B2BZA1F	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B2BZA1F	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GW3B2BZA6	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B2BZA6E	1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
NAND01GW3B2BZA6E	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX
NAND01GW3B2BZA6E	IC FLASH 1G PARALLEL 63VFBGA	Micron 美光	Micron
NAND01GW3B2BZA6F	1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages	NUMONYX	NUMONYX

NAND01GW3B产品属性

类型
描述
型号
NAND01GW3B
制造商
STMICROELECTRONICS
制造商全称
STMicroelectronics
功能描述
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

NAND01GW3B供应商更多...

更新时间：2025-11-20 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	NAND01GW3B2AN6E	ST/意法	24+	NA/	2466	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市华睿芯科技有限公司	NAND01GW3B2AN6E	ST	24+	TSSOP	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
中天科工半导体（深圳）有限公司	NAND01GW3B2CN6E	MICRON/美光	25+	N/A	12496	MICRON/美光原装正品NAND01GW3B2CN6E即刻询购立享优惠#长期有货	询价
深圳市科恒伟业电子有限公司	NAND01GW3B2AN6F	ST	24+	TSSOP	6850	只做原装正品现货或订货假一赔十!	询价
深圳市赛特兴科技有限公司	NAND01GW3B2AE06(TAIWAN)D/C:05	ST	23+	原厂原封	16900	正规渠道,只有原装!	询价
深圳市诺美思科技有限公司	NAND01GW3B2AN6	SST		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市正纳电子有限公司	NAND01GW3B2AN6	ST(意法)	23+	NA	20094	正纳10年以上分销经验原装进口正品做服务做口碑有支持	询价
贸泽芯城（深圳）电子科技有限公司	NAND01GW3B2AN6E	ST/意法	23+	TSOP	20000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市振宏微科技有限公司	NAND01GW3B2AN6	SOP-48	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市富芯乐电子科技有限公司	NAND01GW3B2BN6E	ST	24+	TSOP-48	9500	全新原装现货特价销售,欢迎来电查询	询价

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