型号 功能描述 生产厂家 企业 LOGO 操作
NAND01GW3B2CZA6F

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

NUMONYX

NAND01GW3B2CZA6F

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:711.53 Kbytes Page:62 Pages

STMICROELECTRONICS

意法半导体

NAND01GW3B2CZA6F

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件:1.34162 Mbytes Page:60 Pages

NUMONYX

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:631.49 Kbytes Page:64 Pages

STMICROELECTRONICS

意法半导体

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16

NUMONYX

1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory

文件:711.53 Kbytes Page:62 Pages

STMICROELECTRONICS

意法半导体

1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory

文件:1.34162 Mbytes Page:60 Pages

NUMONYX

NAND01GW3B2CZA6F产品属性

  • 类型

    描述

  • 型号

    NAND01GW3B2CZA6F

  • 制造商

    Micron Technology Inc

  • 功能描述

    Flash Mem Parallel 3V/3.3V 1G-Bit 128M x 8 25us 63-Pin VFBGA T/R

更新时间:2025-10-5 11:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NUMONYX
22+
BGA
30000
只做原装正品
ST
25+
BGA
16900
原装,请咨询
ST/意法
23+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
ATMEL
25+
BGA
3000
强调现货,随时查询!
ST
23+
BGA
16900
正规渠道,只有原装!
Micron
25+
电联咨询
7800
公司现货,提供拆样技术支持
ST
22+
48TSOP
9000
原厂渠道,现货配单
MICRON美光
24+
BGA
13500
免费送样原盒原包现货一手渠道联系
STMicroelectronics
24+
48-TSOP
56200
一级代理/放心采购
ST
24+
BGA
320

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