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NAND01GW3B2CZA6F中文资料

厂家型号

NAND01GW3B2CZA6F

文件大小

1638.5Kbytes

页面数量

67

功能描述

1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory

Flash Mem Parallel 3V/3.3V 1G-Bit 128M x 8 25us 63-Pin VFBGA T/R

数据手册

下载地址一下载地址二到原厂下载

生产厂商

NUMONYX

NAND01GW3B2CZA6F数据手册规格书PDF详情

Features

■ NAND interface

– x8 or x16 bus width

– Multiplexed address/ data

– Pinout compatibility for all densities

■ Supply voltage: 1.8 V/3 V

■ Page size

– x8 device: (2048 + 64 spare) bytes

– x16 device: (1024 + 32 spare) words

■ Block size

– x8 device: (128K + 4K spare) bytes

– x16 device: (64K + 2K spare) words

■ Page read/program

– Random access: 25 μs (max)

– Sequential access: 25 ns (min)

– Page program time: 200 μs (typ)

■ Copy back program mode

■ Cache read mode

■ Fast block erase: 2 ms (typ)

■ Status register

■ Electronic signature

■ Chip enable ‘don’t care’

■ Security features

– OTP area

– Serial number (unique ID)

– Non-volatile protection option

■ Data protection

– Hardware block locking

– Hardware program/erase locked during

power transitions

■ ONFI 1.0 support

– Cache read

– Read signature

– Read

■ Data integrity

– 100,000 program/erase cycles per block

(with ECC)

– 10 years data retention

■ RoHS compliant packages

■ Development tools

– Error correction code models

– Bad blocks management and wear leveling

algorithms

– Hardware simulation models

NAND01GW3B2CZA6F产品属性

  • 类型

    描述

  • 型号

    NAND01GW3B2CZA6F

  • 制造商

    Micron Technology Inc

  • 功能描述

    Flash Mem Parallel 3V/3.3V 1G-Bit 128M x 8 25us 63-Pin VFBGA T/R

更新时间:2025-10-4 8:03:00
供应商 型号 品牌 批号 封装 库存 备注 价格
NUMONYX
23+
BGA
8560
受权代理!全新原装现货特价热卖!
NUMONYX
22+
BGA
30000
只做原装正品
NUMONYX
23+
原厂封装
13528
振宏微原装正品,假一罚百
MICRON
24+
BGA
1000
MICRON专营原装进口现货
MICRON美光
24+
BGA
13500
免费送样原盒原包现货一手渠道联系
Micron
17+
BGA
6200
Micron
25+
BGA
10
百分百原装正品 真实公司现货库存 本公司只做原装 可
MICRON/美光
23+
BGA
9920
原装正品,支持实单
ST/意法
23+
BGA
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
ST
09+
TSOP
700
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