Fast Acting Radial Lead Micro Fuse Series

Fast Acting Radial Lead Micro Fuse Series

POWE FIELD EFFECT TRANSISTOR

DESCRIPTION: The MRF160 is an Enhancement-Mode N-Channel TMOS designed for wideband large-signal amplifier and oscillator applications to 500 MHz.

The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V

The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V Designed primarily for wideband large–signal output and driver from 30–500 MHz. N–Channel enhancement mode MOSFET • Guaranteed 28 V, 500 MHz performance Output power = 4.0 W Gain = 16 dB (min.) Efficiency = 55 (typ.) • E

MOSFET BROADBAND RF POWER FET

The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50 • Excellent Thermal

MOSFET BROADBAND RF POWER FET

The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement-Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Guaranteed 28 Volt, 500 MHz performance Output power = 4.0 Watts Gain = 16 dB (Min) Efficiency = 55 (Typ) • Excel

封装/外壳：249-06 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 65V 500MHZ 249-06 分立半导体产品 晶体管 - FET，MOSFET - 射频

POWE FIELD EFFECT TRANSISTOR

MOSFET BROADBAND RF POWER FET

The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V

The RF MOSFET Line: Broadband Power FET

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TYPE MRF FAST ACTING RADIAL LEAD MICRO FUSE SERIES

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The RF Line NPN Silicon Power Transistor 6.0W , 1.6GHz, 28V

Designed for 28 V microwave large–signal, common base, Class C, CW amplifier applications in the range 1600 – 1640 MHz • Specified 28 V, 1.6 GHz Class C characteristics Output power = 6 W Minimum gain = 7.4 dB, @ 6 W Minimum efficiency = 40 @ 6 W • Characterized with series equiva

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 6 Watts Minimum Gain = 7.4 dB, @ 6 Watts Minimu

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 6 Watts Minimum Gain = 7.4 dB, @ 6 Watts Minimu

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 30 Watts Minimum Gain = 7.5 dB, @ 30 Watts

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 30 Watts Minimum Gain = 7.5 dB, @ 30 Watts

The RF Line NPN Silicon Power Transistor 30W, 1.6GHz, 28V

Designed for 28 V microwave large–signal, common base, Class C, CW amplifier applications in the range 1600 – 1640 MHz • Specified 28 V, 1.6 GHz Class C characteristics Output power = 30 W Minimum gain = 7.5 dB, @ 30 W Minimum efficiency = 40 @ 30 W • Characterized with series equ

Broadband Power FET

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The RF MOSFET Line: Broadband Power FET

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The RF Line NPN Silicon Power Transistor

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封装/外壳：395C-01 包装：托盘 描述：TRANS RF NPN 28V 6W 395C-01 分立半导体产品 晶体管 - 双极（BJT）- 射频

The RF Line NPN Silicon Power Transistor

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The RF Line NPN Silicon Power Transistor

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Surface Mount TRANSZORB Transient Voltage Suppressors

FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 • Excellent clamping capability • Very fast r

1.3 Watts Axial Leaded Zener Diodes

VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current

Fuse and Clip Assembly

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Rugged plastic case

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The 160 Series product is a metal fuse clip with pre-installed Littelfuse 443 Series Fuse

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