MOSFET BROADBAND RF POWER FET

The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50 • Excellent Thermal

MOSFET BROADBAND RF POWER FET

The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement-Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Guaranteed 28 Volt, 500 MHz performance Output power = 4.0 Watts Gain = 16 dB (Min) Efficiency = 55 (Typ) • Excel

Fast Acting Radial Lead Micro Fuse Series

Fast Acting Radial Lead Micro Fuse Series

The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V

The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V Designed primarily for wideband large–signal output and driver from 30–500 MHz. N–Channel enhancement mode MOSFET • Guaranteed 28 V, 500 MHz performance Output power = 4.0 W Gain = 16 dB (min.) Efficiency = 55 (typ.) • E

POWE FIELD EFFECT TRANSISTOR

DESCRIPTION: The MRF160 is an Enhancement-Mode N-Channel TMOS designed for wideband large-signal amplifier and oscillator applications to 500 MHz.

The RF MOSFET Line: Broadband Power FET 4W, to 500MHz, 28V

Designed primarily for wideband large–signal output and driver from 30–500 MHz. ·N–Channel enhancement mode MOSFET\n·Guaranteed 28 V, 500 MHz Performance: Output Power = 4.0 W,Gain = 16 dB (min.), Efficiency = 55% (Typ.)\n·100% Test for Load Mismatch at all Phase Angels with 30:1 VSWR\n·Facilitates Manual Gain Control, aLS and Modulation Techniques\n·Excellent Thermal S;

POWE FIELD EFFECT TRANSISTOR

MOSFET BROADBAND RF POWER FET

The RF MOSFET Line: Broadband Power FET

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封装/外壳：249-06 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 65V 500MHZ 249-06 分立半导体产品 晶体管 - FET，MOSFET - 射频

TYPE MRF FAST ACTING RADIAL LEAD MICRO FUSE SERIES

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The RF Line NPN Silicon Power Transistor 6.0W , 1.6GHz, 28V

Designed for 28 V microwave large–signal, common base, Class C, CW amplifier applications in the range 1600 – 1640 MHz • Specified 28 V, 1.6 GHz Class C characteristics Output power = 6 W Minimum gain = 7.4 dB, @ 6 W Minimum efficiency = 40 @ 6 W • Characterized with series equiva

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 6 Watts Minimum Gain = 7.4 dB, @ 6 Watts Minimu

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 6 Watts Minimum Gain = 7.4 dB, @ 6 Watts Minimu

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 30 Watts Minimum Gain = 7.5 dB, @ 30 Watts

The RF Line NPN Silicon Power Transistor 30W, 1.6GHz, 28V

Designed for 28 V microwave large–signal, common base, Class C, CW amplifier applications in the range 1600 – 1640 MHz • Specified 28 V, 1.6 GHz Class C characteristics Output power = 30 W Minimum gain = 7.5 dB, @ 30 W Minimum efficiency = 40 @ 30 W • Characterized with series equ

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 30 Watts Minimum Gain = 7.5 dB, @ 30 Watts

Broadband Power FET

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The RF MOSFET Line: Broadband Power FET

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The RF Line NPN Silicon Power Transistor

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封装/外壳：395C-01 包装：托盘 描述：TRANS RF NPN 28V 6W 395C-01 分立半导体产品 晶体管 - 双极（BJT）- 射频

The RF Line NPN Silicon Power Transistor

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The RF Line NPN Silicon Power Transistor

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Axial Lead Rectifiers

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

POWER TRANSISTORS(10A,320-380V,125W)