POWER TRANSISTORS(10A,320-380V,125W)

NPN SILICON POWER DARLINGTONS

● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE(sat) of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO

NPN SILICON POWER DARLINGTONS

NPN SILICON POWER DARLINGTONS ● 50 W at 25°C Case Temperature ● 10 A Continuous Collector Current ● 15 A Peak Collector Current ● Maximum VCE(sat) of 2.8 V at IC = 6.5 A ● ICEX(sus) 7 A at rated V(BR)CEO

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • DARLINGTON • 10A rated continuous collector current APPLICATIONS • For use in automotive ignition,switching and motor control applications

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PN package • DARLINGTON • 10A rated continuous collector current APPLICATIONS • For use in automotive ignition,switching and motor control applications

Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 320V(Min) • Low Collector-Emitter Saturation Voltage- : VCE (sat)= 2.9V(Max.)@ IC= 10A APPLICATIONS • Designed for use in automotive ignition, switching and motor control applications.

NPN SILICON POWER DARLINGTON TRANSISTORS

Trans Darlington NPN 320V 15A 3-Pin(3+Tab) TO-247

Axial Lead Rectifiers

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert

MOSFET BROADBAND RF POWER FET

The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50 • Excellent Thermal

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly