RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 30 Watts Minimum Gain = 7.5 dB, @ 30 Watts

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 30 Watts Minimum Gain = 7.5 dB, @ 30 Watts

The RF Line NPN Silicon Power Transistor 30W, 1.6GHz, 28V

Designed for 28 V microwave large–signal, common base, Class C, CW amplifier applications in the range 1600 – 1640 MHz • Specified 28 V, 1.6 GHz Class C characteristics Output power = 30 W Minimum gain = 7.5 dB, @ 30 W Minimum efficiency = 40 @ 30 W • Characterized with series equ

RF POWER TRANSISTOR NPN SILICON

160 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package with base connected to flange. FEATURES • Input and output matching cell allows an easier design of circuits • Diffused emitter ballasting resistors providing excelle

N-channel TrenchMOS-TM logic level FET

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