The RF MOSFET Line

Power Field Effect Transistor

N–Channel Enhancement-Mode MOSFET

Designed primarily for wideband large–signal output and driver from 30–500 MHz.

• Guaranteed 28 Volt, 500 MHz performance

Output power = 4.0 Watts

Gain = 16 dB (Min)

Efficiency = 55 (Typ)

• Excellent thermal stability, ideally suited for Class A operation

• Facilitates manual gain control, ALC and modulation techniques

• 100 Tested for load mismatch at all phase angles with 30:1 VSWR

• Low Crss – 0.8 pF Typical at VDS = 28 Volts