The RF MOSFET Line

Power Field Effect Transistor

N–Channel Enhancement–Mode MOSFET

Designed primarily for wideband large–signal output and driver from 30–500 MHz.

• Typical Performance at 400 MHz, 28 Vdc

Output Power = 4.0 Watts

Gain = 17 dB

Efficiency = 50

• Excellent Thermal Stability, Ideally Suited for Class A Operation

• Facilitates Manual Gain Control, ALC and Modulation Techniques

• 100 Tested for Load Mismatch at All Phase Angles with 30:1 VSWR

• Low Crss – 0.8 pF Typical at VDS = 28 Volts