Axial Lead Rectifiers

The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free

Schottky Rectifier, 1 A

DESCRIPTION The VS-MBR... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial lea

SCHOTTKY BARRIER RECTIFIER

DESCRIPTION The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and pol

Axial Lead Rectifiers

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert

1.0A Axial Leaded Schottky Barrier Rectifier Diodes

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

Low Reverse Current

Features • Low Reverse Current • Low Stored Charge. Majority Carrier Conduction • Low Power Loss/High Efficiency • Highly Stable Oxide Passivated Junction

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 40 to 200 Volts CURRENT 1.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequenc

SCHOTTKY BARRIER RECTIFIER DIODES

FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low forward voltage drop * Pb / RoHS Free

1A SCHOTTKY RECTIFIER

1A SCHOTTKY RECTIFIER

1.0A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

肖特基势垒整流器，60 V，1.0 A

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, • Low Reverse Current\n• Low Stored Charge, Majority Carrier Conduction\n• Low Power Loss/High Efficiency\n• Highly Stable Oxide Passivated JunctionMechanical Characteristics:\n• Case: Epoxy, Molded\n• Weight: 0.4 gram (approximately)\n• Finish: All External Surfaces Corrosion Resistant and Terminal;

1.0A 60v Schottky diode

文件：291.293 Kbytes Page：2 Pages

封装/外壳：DO-204AL，DO-41，轴向 包装：散装 描述：DIODE SCHOTTKY 60V 1A AXIAL 分立半导体产品 二极管 - 整流器 - 单

Schottky Rectifier, 1 A

文件：120.8 Kbytes Page：6 Pages

SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 1.0A

DESCRIPTION The MBR120E~MBR1200E is available in SOD-323HE Package FEATURES  Plastic package has Underwriters Laboratory Flammability Classification 94V 0  Low power loss, high efficiency  For use in low voltage high frequency inverters, free wheeling, and polarity protection appl

SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 1.0A

DESCRIPTION Th e MBR120 F MBR1200 F are available in S OD 1 23 FL p a ckage FEATURES ⚫ M e tal silicon junction, majority carrier conduction ⚫ For surface mounted applications ⚫ Low power loss, high efficien cy ⚫ High forward surge current capability ⚫ For use in low volta ge, high fre

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

FEATURES Schottky barrier chip guard ring die construction for transient protection Low forward loss,high efficiency High surge capability High current capability and low forward voltage drop For use in low voltage,high frequency inverters,free wheeling,and polarity protection application P

Schottky Diodes

■ Features ● Low power loss,high efficiency ● High forward surge current capability ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0

Axial Lead Rectifiers

The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free

SCHOTTKY BARRIER RECTIFIER

DESCRIPTION The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and pol

SCHOTTKY BARRIER RECTIFIER

DESCRIPTION The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and pol

SCHOTTKY BARRIER RECTIFIER

DESCRIPTION The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and pol

SCHOTTKY BARRIER DIODE

Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring Transient and ESD Protection Designed for Surface Mount Application Plastic Material —UL Recognition Flammability Classification 94V-O Green Products in Compliance with the ROHS Directive This is a Pb − Free Device All SMC

SCHOTTKY BARRIER RECTIFIER

DESCRIPTION The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and pol

SCHOTTKY BARRIER RECTIFIER

DESCRIPTION The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and pol

SCHOTTKY BARRIER RECTIFIER

DESCRIPTION The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and pol

Axial Lead Rectifiers

The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free

Axial Lead Rectifiers

The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free

Schottky Rectifier, 1 A

DESCRIPTION The VS-MBR... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial lea

1.0A 60V Schottky diode

文件：352.424 Kbytes Page：2 Pages

1A,60V,Surface Mount Small Signal Schottky Diodes

肖特基二极管

封装/外壳：SOD-123 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 60V 1A SOD123 分立半导体产品 二极管 - 整流器 - 单

SURFACE MOUNT SCHOTTKY BARRIER DIODE

文件：127.97 Kbytes Page：4 Pages

Schottky Rectifier, 1 A

文件：120.8 Kbytes Page：6 Pages

Schottky Rectifier, 1 A

文件：120.8 Kbytes Page：6 Pages

Schottky Rectifier, 1 A

文件：120.8 Kbytes Page：6 Pages

MOSFET BROADBAND RF POWER FET

The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50 • Excellent Thermal

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

POWER TRANSISTORS(10A,320-380V,125W)