MBR160价格

参考价格:¥0.4758

型号:MBR160G 品牌:ON 备注:这里有MBR160多少钱,2025年最近7天走势,今日出价,今日竞价,MBR160批发/采购报价,MBR160行情走势销售排行榜,MBR160报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MBR160

Axial Lead Rectifiers

The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free

ONSEMI

安森美半导体

MBR160

Schottky Rectifier, 1 A

DESCRIPTION The VS-MBR... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial lea

VishayVishay Siliconix

威世科技

MBR160

SCHOTTKY BARRIER RECTIFIER

DESCRIPTION The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and pol

UTC

友顺

MBR160

Axial Lead Rectifiers

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert

Motorola

摩托罗拉

MBR160

1.0A Axial Leaded Schottky Barrier Rectifier Diodes

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

SUNMATE

森美特

MBR160

Low Reverse Current

Features • Low Reverse Current • Low Stored Charge. Majority Carrier Conduction • Low Power Loss/High Efficiency • Highly Stable Oxide Passivated Junction

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

MBR160

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE 40 to 200 Volts CURRENT 1.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequenc

PANJIT

強茂

MBR160

SCHOTTKY BARRIER RECTIFIER DIODES

FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low forward voltage drop * Pb / RoHS Free

SYNSEMI

MBR160

1A SCHOTTKY RECTIFIER

1A SCHOTTKY RECTIFIER

DIGITRON

MBR160

1.0A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

ZSELEC

淄博圣诺

MBR160

1.0A 60v Schottky diode

文件:291.293 Kbytes Page:2 Pages

SUNMATE

森美特

PDF上传者:深圳冠荣电子有限公司

MBR160

封装/外壳:DO-204AL,DO-41,轴向 包装:散装 描述:DIODE SCHOTTKY 60V 1A AXIAL 分立半导体产品 二极管 - 整流器 - 单

ONSEMI

安森美半导体

MBR160

Schottky Rectifier, 1 A

文件:120.8 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

MBR160

肖特基势垒整流器,60 V,1.0 A

ONSEMI

安森美半导体

SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 1.0A

DESCRIPTION The MBR120E~MBR1200E is available in SOD-323HE Package FEATURES  Plastic package has Underwriters Laboratory Flammability Classification 94V 0  Low power loss, high efficiency  For use in low voltage high frequency inverters, free wheeling, and polarity protection appl

AITSEMI

创瑞科技

SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 1.0A

DESCRIPTION Th e MBR120 F MBR1200 F are available in S OD 1 23 FL p a ckage FEATURES ⚫ M e tal silicon junction, majority carrier conduction ⚫ For surface mounted applications ⚫ Low power loss, high efficien cy ⚫ High forward surge current capability ⚫ For use in low volta ge, high fre

AITSEMI

创瑞科技

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

FEATURES Schottky barrier chip guard ring die construction for transient protection Low forward loss,high efficiency High surge capability High current capability and low forward voltage drop For use in low voltage,high frequency inverters,free wheeling,and polarity protection application P

PACELEADER

霈峰

Schottky Diodes

■ Features ● Low power loss,high efficiency ● High forward surge current capability ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0

KEXIN

科信电子

Axial Lead Rectifiers

The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free

ONSEMI

安森美半导体

SCHOTTKY BARRIER RECTIFIER

DESCRIPTION The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and pol

UTC

友顺

SCHOTTKY BARRIER RECTIFIER

DESCRIPTION The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and pol

UTC

友顺

SCHOTTKY BARRIER RECTIFIER

DESCRIPTION The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and pol

UTC

友顺

SCHOTTKY BARRIER DIODE

Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring Transient and ESD Protection Designed for Surface Mount Application Plastic Material —UL Recognition Flammability Classification 94V-O Green Products in Compliance with the ROHS Directive This is a Pb − Free Device All SMC

SMCDIODE

桑德斯微电子

SCHOTTKY BARRIER RECTIFIER

DESCRIPTION The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and pol

UTC

友顺

SCHOTTKY BARRIER RECTIFIER

DESCRIPTION The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and pol

UTC

友顺

SCHOTTKY BARRIER RECTIFIER

DESCRIPTION The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and pol

UTC

友顺

Axial Lead Rectifiers

The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free

ONSEMI

安森美半导体

Axial Lead Rectifiers

The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free

ONSEMI

安森美半导体

Schottky Rectifier, 1 A

DESCRIPTION The VS-MBR... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial lea

VishayVishay Siliconix

威世科技

1.0A 60V Schottky diode

文件:352.424 Kbytes Page:2 Pages

SUNMATE

森美特

PDF上传者:深圳冠荣电子有限公司

1A,60V,Surface Mount Small Signal Schottky Diodes

GALAXYCHANGZHOU GALAXY CENTURY MICROELECTRONICS CO.,LTD.

银河微电常州银河世纪微电子股份有限公司

肖特基二极管

SMC

桑德斯微电子

SURFACE MOUNT SCHOTTKY BARRIER DIODE

文件:127.97 Kbytes Page:4 Pages

SMC

桑德斯微电子

封装/外壳:SOD-123 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 60V 1A SOD123 分立半导体产品 二极管 - 整流器 - 单

SMCDIODE

桑德斯微电子

Schottky Rectifier, 1 A

文件:120.8 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Schottky Rectifier, 1 A

文件:120.8 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Schottky Rectifier, 1 A

文件:120.8 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技

Surface Mount TRANSZORB Transient Voltage Suppressors

FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 • Excellent clamping capability • Very fast r

VishayVishay Siliconix

威世科技

1.3 Watts Axial Leaded Zener Diodes

VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current

SUNMATE

森美特

Fuse and Clip Assembly

文件:202.87 Kbytes Page:4 Pages

LINEAGEPOWER

Rugged plastic case

文件:141.53 Kbytes Page:6 Pages

CDE

The 160 Series product is a metal fuse clip with pre-installed Littelfuse 443 Series Fuse

文件:719.54 Kbytes Page:3 Pages

Littelfuse

力特

MBR160产品属性

  • 类型

    描述

  • 型号

    MBR160

  • 功能描述

    肖特基二极管与整流器 1A 60V

  • RoHS

  • 制造商

    Skyworks Solutions, Inc.

  • 产品

    Schottky Diodes

  • 峰值反向电压

    2 V

  • 正向连续电流

    50 mA

  • 配置

    Crossover Quad

  • 正向电压下降

    370 mV

  • 最大功率耗散

    75 mW

  • 工作温度范围

    - 65 C to + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOT-143

  • 封装

    Reel

更新时间:2025-9-25 13:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
SMC/桑德斯
24+
SOD123
60000
UTC/友顺
24+
NA
8000
只做原装,欢迎询价,量大价优
ONN
2405+
原厂封装
4448
只做原装优势现货库存 渠道可追溯
ON/安森美
2450+
8540
只做原装正品假一赔十为客户做到零风险!!
NK/南科功率
2025+
SOD-123
986966
国产
ON
2023+
DO-41
4434
进口原装现货
ON/安森美
24+
DO-204AL
10000
十年沉淀唯有原装
ON(安森美)
2021/2022+
标准封装
8000
原厂原装现货订货价格优势终端BOM表可配单提供样品
YANGJIE
24+
SOD-323
50000
原厂直销全新原装正品现货 欢迎选购

MBR160数据表相关新闻