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MBR160价格
参考价格:¥0.4758
型号:MBR160G 品牌:ON 备注:这里有MBR160多少钱,2025年最近7天走势,今日出价,今日竞价,MBR160批发/采购报价,MBR160行情走势销售排行榜,MBR160报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
MBR160 | Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free | ONSEMI 安森美半导体 | ||
MBR160 | Schottky Rectifier, 1 A DESCRIPTION The VS-MBR... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial lea | VishayVishay Siliconix 威世科技 | ||
MBR160 | SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and pol | UTC 友顺 | ||
MBR160 | Axial Lead Rectifiers Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert | Motorola 摩托罗拉 | ||
MBR160 | 1.0A Axial Leaded Schottky Barrier Rectifier Diodes Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications | SUNMATE 森美特 | ||
MBR160 | Low Reverse Current Features • Low Reverse Current • Low Stored Charge. Majority Carrier Conduction • Low Power Loss/High Efficiency • Highly Stable Oxide Passivated Junction | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
MBR160 | SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 1.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • For use in low voltage,high frequenc | PANJIT 強茂 | ||
MBR160 | SCHOTTKY BARRIER RECTIFIER DIODES FEATURES : * High current capability * High surge current capability * High reliability * High efficiency * Low power loss * Low forward voltage drop * Pb / RoHS Free | SYNSEMI | ||
MBR160 | 1A SCHOTTKY RECTIFIER 1A SCHOTTKY RECTIFIER | DIGITRON | ||
MBR160 | 1.0A SCHOTTKY BARRIER DIODE Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications | ZSELEC 淄博圣诺 | ||
MBR160 | 1.0A 60v Schottky diode 文件:291.293 Kbytes Page:2 Pages | |||
MBR160 | 封装/外壳:DO-204AL,DO-41,轴向 包装:散装 描述:DIODE SCHOTTKY 60V 1A AXIAL 分立半导体产品 二极管 - 整流器 - 单 | ONSEMI 安森美半导体 | ||
MBR160 | Schottky Rectifier, 1 A 文件:120.8 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技 | ||
MBR160 | 肖特基势垒整流器,60 V,1.0 A | ONSEMI 安森美半导体 | ||
SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE 20V TO 200V FORWARD CURRENT 1.0A DESCRIPTION The MBR120E~MBR1200E is available in SOD-323HE Package FEATURES Plastic package has Underwriters Laboratory Flammability Classification 94V 0 Low power loss, high efficiency For use in low voltage high frequency inverters, free wheeling, and polarity protection appl | AITSEMI 创瑞科技 | |||
SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 1.0A DESCRIPTION Th e MBR120 F MBR1200 F are available in S OD 1 23 FL p a ckage FEATURES ⚫ M e tal silicon junction, majority carrier conduction ⚫ For surface mounted applications ⚫ Low power loss, high efficien cy ⚫ High forward surge current capability ⚫ For use in low volta ge, high fre | AITSEMI 创瑞科技 | |||
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER FEATURES Schottky barrier chip guard ring die construction for transient protection Low forward loss,high efficiency High surge capability High current capability and low forward voltage drop For use in low voltage,high frequency inverters,free wheeling,and polarity protection application P | PACELEADER 霈峰 | |||
Schottky Diodes ■ Features ● Low power loss,high efficiency ● High forward surge current capability ● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 | KEXIN 科信电子 | |||
Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free | ONSEMI 安森美半导体 | |||
SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and pol | UTC 友顺 | |||
SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and pol | UTC 友顺 | |||
SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and pol | UTC 友顺 | |||
SCHOTTKY BARRIER DIODE Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring Transient and ESD Protection Designed for Surface Mount Application Plastic Material —UL Recognition Flammability Classification 94V-O Green Products in Compliance with the ROHS Directive This is a Pb − Free Device All SMC | SMCDIODE 桑德斯微电子 | |||
SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and pol | UTC 友顺 | |||
SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and pol | UTC 友顺 | |||
SCHOTTKY BARRIER RECTIFIER DESCRIPTION The UTC MBR160 is a 1.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and low forward voltage drop, etc. The UTC MBR160 is suitable for free wheeling and pol | UTC 友顺 | |||
Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free | ONSEMI 安森美半导体 | |||
Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free | ONSEMI 安森美半导体 | |||
Schottky Rectifier, 1 A DESCRIPTION The VS-MBR... axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. FEATURES • Low profile, axial lea | VishayVishay Siliconix 威世科技 | |||
1.0A 60V Schottky diode 文件:352.424 Kbytes Page:2 Pages | ||||
1A,60V,Surface Mount Small Signal Schottky Diodes | GALAXYCHANGZHOU GALAXY CENTURY MICROELECTRONICS CO.,LTD. 银河微电常州银河世纪微电子股份有限公司 | |||
肖特基二极管 | SMC 桑德斯微电子 | |||
SURFACE MOUNT SCHOTTKY BARRIER DIODE 文件:127.97 Kbytes Page:4 Pages | SMC 桑德斯微电子 | |||
封装/外壳:SOD-123 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 60V 1A SOD123 分立半导体产品 二极管 - 整流器 - 单 | SMCDIODE 桑德斯微电子 | |||
Schottky Rectifier, 1 A 文件:120.8 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技 | |||
Schottky Rectifier, 1 A 文件:120.8 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技 | |||
Schottky Rectifier, 1 A 文件:120.8 Kbytes Page:6 Pages | VishayVishay Siliconix 威世科技 | |||
Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 • Excellent clamping capability • Very fast r | VishayVishay Siliconix 威世科技 | |||
1.3 Watts Axial Leaded Zener Diodes VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current | SUNMATE 森美特 | |||
Fuse and Clip Assembly 文件:202.87 Kbytes Page:4 Pages | LINEAGEPOWER | |||
Rugged plastic case 文件:141.53 Kbytes Page:6 Pages | CDE | |||
The 160 Series product is a metal fuse clip with pre-installed Littelfuse 443 Series Fuse 文件:719.54 Kbytes Page:3 Pages | Littelfuse 力特 |
MBR160产品属性
- 类型
描述
- 型号
MBR160
- 功能描述
肖特基二极管与整流器 1A 60V
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
SMC/桑德斯 |
24+ |
SOD123 |
60000 |
||||
UTC/友顺 |
24+ |
NA |
8000 |
只做原装,欢迎询价,量大价优 |
|||
ONN |
2405+ |
原厂封装 |
4448 |
只做原装优势现货库存 渠道可追溯 |
|||
ON/安森美 |
2450+ |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
||||
NK/南科功率 |
2025+ |
SOD-123 |
986966 |
国产 |
|||
ON |
2023+ |
DO-41 |
4434 |
进口原装现货 |
|||
ON/安森美 |
24+ |
DO-204AL |
10000 |
十年沉淀唯有原装 |
|||
ON(安森美) |
2021/2022+ |
标准封装 |
8000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
YANGJIE |
24+ |
SOD-323 |
50000 |
原厂直销全新原装正品现货 欢迎选购 |
MBR160芯片相关品牌
MBR160规格书下载地址
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