The RF Line NPN Silicon Power Transistor 6.0W , 1.6GHz, 28V

Designed for 28 V microwave large–signal, common base, Class C, CW amplifier applications in the range 1600 – 1640 MHz • Specified 28 V, 1.6 GHz Class C characteristics Output power = 6 W Minimum gain = 7.4 dB, @ 6 W Minimum efficiency = 40 @ 6 W • Characterized with series equiva

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 6 Watts Minimum Gain = 7.4 dB, @ 6 Watts Minimu

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 6 Watts Minimum Gain = 7.4 dB, @ 6 Watts Minimu

Bipolar

Designed for 28 V microwave large–signal, common base, Class C, CW amplifier applications in the range 1600 – 1640 MHz. ·Specified 28 V, 1.6 GHz Class C Characteristics;: Output Power = 6 W, Minimum Gain = 7.4 dB, @ 6 W, Minimum Efficiency = 40% @ 6 W\n·Gold Metalized,Emitter Ballasted for Long Lifeand Resistance to Metal Migration\n·Silicon Nitride Passivated\n·Characterized with Series Equivalent Large–Signal P;

封装/外壳：395C-01 包装：托盘 描述：TRANS RF NPN 28V 6W 395C-01 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon Power Transistor

文件：176.58 Kbytes Page：6 Pages

The RF Line NPN Silicon Power Transistor

文件：176.58 Kbytes Page：6 Pages

The RF Line NPN Silicon Power Transistor

文件：540.89 Kbytes Page：7 Pages

POWER TRANSISTORS(8A,450V,150W)

SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 8 AMPERE SILICON POWER TRANSISTORS 450 VOLTS 150 WATTS

POWER TRANSISTORS 8 AMPERES 500 VOLTS 150 WATTS

NPN Silicon Power Transistor 1kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. Features: • Collector–Emitter V

POWER TRANSISTORS 8 AMPERES 500 VOLTS 150 WATTS

NPN Silicon Power Transistor 1kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. Features: • Collector–Emitter V

Silicon NPN Transistor Low Frequency Output Amp w/High Current Gain

Features: • High DC Current Gain • Low Collector–Emitter Saturation Voltage • An M type mold package that allows easy manual and automatic insertion. Can be firmly mounted flush to PCB surface