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MJE18晶体管资料

MJE180别名：MJE180三极管、MJE180晶体管、MJE180晶体三极管
MJE180生产厂家：美国摩托罗拉半导体公司
MJE180制作材料：Si-NPN
MJE180性质：低频或音频放大（LF）_功率放大（L）
MJE180封装形式：直插封装
MJE180极限工作电压：40V
MJE180最大电流允许值：3A
MJE180最大工作频率：<1MHZ或未知
MJE180引脚数：3
MJE180最大耗散功率：12.5W
MJE180放大倍数：
MJE180图片代号：B-21
MJE180vtest：40
MJE180htest：999900
MJE180atest：3
MJE180wtest：12.5

MJE180代换 MJE180用什么型号代替：BD175,BD185,BD233,BD437,SDD373A,

MJE18价格

参考价格：￥5.0644

型号：MJE180 品牌：Central Semiconductor Co 备注：这里有MJE18多少钱，2025年最近7天走势，今日出价，今日竞价，MJE18批发/采购报价，MJE18行情走势销售排行榜，MJE18报价。

型号	功能描述	生产厂家企业	LOGO
MJE180	Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type MJE170/171/172 APPLICATIONS ·For low power audio amplifier and low current high speed switching applications	SAVANTIC	SAVANTIC
MJE180	isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = 40 V ·DC Current Gain— : hFE = 30(Min) @ IC= 0.5 A = 12(Min) @ IC= 1.5 A ·Complement to Type MJE170 APPLICATIONS ·Low power audio amplifier ·Low current high speed swit	ISC 无锡固电	ISC
MJE180	COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS ... designed for low power amplifier and low current, high speed switchii applications. FEATURES: * Collector-Emitter Sustaining VoHage- VCEO(SUS) =40 V (Min) - MJE170.MJE180 = 60 V (Min) - MJE171.MJE181	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MJE180	SILICON COMPLEMENTRY POWER TRANSISTOR	Central	Central
MJE180	PNP PLASTIC POWER TRANSISTORS MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORS MJE180, 181, 182 NPN PLASTIC POWER TRANSISTORS	CDIL	CDIL
MJE180	POWER TRANSISTORS(3.0A,40-80V,12.5W) COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS	MOSPEC 统懋	MOSPEC
MJE180	Low Power Audio Amplifier Low Current High Speed Switching Applications Low Current High Speed Switching Applications	Fairchild 仙童半导体	Fairchild
MJE18002	POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18002 have an applications specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors offer th	Motorola 摩托罗拉	Motorola
MJE18002	POWER TRANSISTOR SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002 have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base Drive R	ONSEMI 安森美半导体	ONSEMI
MJE18002	Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High voltage, high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballast	SAVANTIC	SAVANTIC
MJE18002	Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High voltage, high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballast	ISC 无锡固电	ISC
MJE18002D2	POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC* cir	Motorola 摩托罗拉	Motorola
MJE18002D2	POWER TRANSISTORS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC* cir	ONSEMI 安森美半导体	ONSEMI
MJE18002G	SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002 have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base Drive R	ONSEMI 安森美半导体	ONSEMI
MJE18004	POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. This high voltage/high speed transistors offer the following: • Improved Ef	Motorola 摩托罗拉	Motorola
MJE18004	POWER TRANSISTOR SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features ● Improved Efficiency Due to Low Base D	ONSEMI 安森美半导体	ONSEMI
MJE18004	Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • High voltage ,high speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts	SAVANTIC	SAVANTIC
MJE18004	NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features ● Improved Efficiency Due to Low Base D	ONSEMI 安森美半导体	ONSEMI
MJE18004	isc Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) • High Switching Speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts	ISC 无锡固电	ISC
MJE18004	Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) • High Switching Speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MJE18004D2	POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main features	Motorola 摩托罗拉	Motorola
MJE18004D2	POWER TRANSISTORS The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main features:	ONSEMI 安森美半导体	ONSEMI
MJE18004G	NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features ● Improved Efficiency Due to Low Base D	ONSEMI 安森美半导体	ONSEMI
MJE18006	POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18006 have an applications specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors	Motorola 摩托罗拉	Motorola
MJE18006	POWER TRANSISTOR SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18006 have an applications specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors o	ONSEMI 安森美半导体	ONSEMI
MJE18006	Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High voltage ,high speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts.	SAVANTIC	SAVANTIC
MJE18006	Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High voltage ,high speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts.	ISC 无锡固电	ISC
MJE18006	Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High voltage ,high speed • Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic	JMNIC 锦美电子	JMNIC
MJE18006	Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- :V(BR)CBO=1000V(Min) • High Switching Speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MJE18006G	NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18006G has an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low	ONSEMI 安森美半导体	ONSEMI
MJE18008	POWER TRANSISTOR SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base	ONSEMI 安森美半导体	ONSEMI
MJE18008	POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors of	Motorola 摩托罗拉	Motorola
MJE18008	Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage, high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts	SAVANTIC	SAVANTIC
MJE18008	Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage, high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts	ISC 无锡固电	ISC
MJE18008	NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base	ONSEMI 安森美半导体	ONSEMI
MJE18008	Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ,high speed ·Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts.	JMNIC 锦美电子	JMNIC
MJE18008	Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- :V(BR)CBO= 1000V(Min) • High Switching Speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MJE18008G	NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base	ONSEMI 安森美半导体	ONSEMI
MJE18009	POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic ballast (“light ballast”). These high voltage/high speed transistors exhibit the following main features: • Improved Efficiency Due to Low Base Drive	Motorola 摩托罗拉	Motorola
MJE18009	POWER TRANSISTORS The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated SWITCHMODE Power supplies and electronic ballast (“light ballast”). These high voltage/high speed transistors exhibit the following main features: • Improved Efficiency Due to Low Base Drive	ONSEMI 安森美半导体	ONSEMI
MJE180G	Complementary Plastic Silicon Power Transistors Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,	ONSEMI 安森美半导体	ONSEMI
MJE181	POWER TRANSISTORS(3.0A,40-80V,12.5W) COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS	MOSPEC 统懋	MOSPEC
MJE181	3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182	Motorola 摩托罗拉	Motorola
MJE181	POWER TRANSISTORS COMPLEMENTARY SILICON Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,	ONSEMI 安森美半导体	ONSEMI
MJE181	Low Power Audio Amplifier Low Current High Speed Switching Applications Low Current High Speed Switching Applications	Fairchild 仙童半导体	Fairchild
MJE181	Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type MJE170/171/172 APPLICATIONS ·For low power audio amplifier and low current high speed switching applications	SAVANTIC	SAVANTIC
MJE181	SILICON COMPLEMENTRY POWER TRANSISTOR	Central	Central
MJE181	COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS ... designed for low power amplifier and low current, high speed switchii applications. FEATURES: * Collector-Emitter Sustaining VoHage- VCEO(SUS) =40 V (Min) - MJE170.MJE180 = 60 V (Min) - MJE171.MJE181	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MJE181	PNP PLASTIC POWER TRANSISTORS MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORS MJE180, 181, 182 NPN PLASTIC POWER TRANSISTORS	CDIL	CDIL
MJE181G	Complementary Plastic Silicon Power Transistors Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,	ONSEMI 安森美半导体	ONSEMI
MJE182	POWER TRANSISTORS(3.0A,40-80V,12.5W) COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS	MOSPEC 统懋	MOSPEC
MJE182	POWER TRANSISTORS COMPLEMENTARY SILICON Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,	ONSEMI 安森美半导体	ONSEMI
MJE182	COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type) are silicon epitaxial planar, complementary transistors in Jedec SOT-32 plastic package, they are designed for low power audio amplifier and low current, high speed switching applications. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
MJE182	3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182	Motorola 摩托罗拉	Motorola
MJE182	Low Power Audio Amplifier Low Current High Speed Switching Applications Low Current High Speed Switching Applications	Fairchild 仙童半导体	Fairchild
MJE182	Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type MJE170/171/172 APPLICATIONS ·For low power audio amplifier and low current high speed switching applications	SAVANTIC	SAVANTIC
MJE182	isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage—: VCEO(SUS) = 80 V ·DC Current Gain—: hFE = 30(Min) @ IC= 0.5 A = 12(Min) @ IC= 1.5 A ·Complement to Type MJE172 APPLICATIONS ·Low power audio amplifier ·Low current high speed switching applications	ISC 无锡固电	ISC
MJE182	COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS ... designed for low power amplifier and low current, high speed switchii applications. FEATURES: * Collector-Emitter Sustaining VoHage- VCEO(SUS) =40 V (Min) - MJE170.MJE180 = 60 V (Min) - MJE171.MJE181	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MJE182	PNP PLASTIC POWER TRANSISTORS MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORS MJE180, 181, 182 NPN PLASTIC POWER TRANSISTORS	CDIL	CDIL
MJE182	SILICON COMPLEMENTRY POWER TRANSISTOR	Central	Central

MJE18产品属性

类型
描述
型号
MJE18
功能描述
两极晶体管 - BJT NPN Power
RoHS
否
制造商
STMicroelectronics
晶体管极性
PNP 集电极—基极电压
VCBO
集电极—发射极最大电压
VCEO
- 40 V 发射极 - 基极电压
VEBO
- 6 V
增益带宽产品fT
直流集电极/Base Gain hfe
Min
100 A
安装风格
SMD/SMT
封装/箱体
PowerFLAT 2 x 2

MJE18供应商更多...

更新时间：2025-12-25 12:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市盈慧通电子有限公司	MJE18004	ON(安森美)	2511		5285	电子元器件采购降本 30%!公司原厂直采,砍掉中间差价	询价
深圳市勤思达科技有限公司	MJE180	ON/	24+	TO-225AA	5000	全新原装正品,现货销售	询价
深圳市高捷芯城科技有限公司	MJE180G	onsemi(安森美)	24+	TO-225	1259	原厂订货渠道,支持BOM配单一站式服务	询价
深圳市得捷芯城科技有限公司	MJE180	FAIRCHILD/仙童	24+	NA/	15403	原装现货,当天可交货,原型号开票	询价
中天科工半导体（深圳）有限公司	MJE180	ON	20+	TO-126	38900	原装优势主营型号-可开原型号增税票	询价
深圳市坤融电子科技有限公司	MJE180G	ONSEMI/安森美	2025+		2500	原装进口价格优请找坤融电子!	询价
深圳市百诺芯科技有限公司	MJE180	MOTOROLA/摩托罗拉	23+	TO-225AATO-126	24190	原装正品代理渠道价格优势	询价
深圳市威尔健半导体有限公司	MJE180	FAIRCHILD/仙童	23+	TO-126F	50000	全新原装正品现货,支持订货	询价
千层芯半导体(深圳)有限公司	MJE18002	ON	24+	TO-220	6000	进口原装正品假一赔十,货期7-10天	询价
深圳市昊创电子有限公司	MJE180	LT/凌特	专业铁帽	TO-225AA	89	原装铁帽专营,代理渠道量大可订货	询价

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MJE18晶体管资料

MJE18价格

MJE18产品属性

MJE18供应商更多...

MJE18芯片相关品牌

MJE18规格书下载地址

MJE18参数引脚图相关

MJE18数据表相关新闻

MJD50G只供应原装，现货价低

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