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MJE18晶体管资料

MJE180别名：MJE180三极管、MJE180晶体管、MJE180晶体三极管
MJE180生产厂家：美国摩托罗拉半导体公司
MJE180制作材料：Si-NPN
MJE180性质：低频或音频放大（LF）_功率放大（L）
MJE180封装形式：直插封装
MJE180极限工作电压：40V
MJE180最大电流允许值：3A
MJE180最大工作频率：<1MHZ或未知
MJE180引脚数：3
MJE180最大耗散功率：12.5W
MJE180放大倍数：
MJE180图片代号：B-21
MJE180vtest：40
MJE180htest：999900
MJE180atest：3
MJE180wtest：12.5

MJE180代换 MJE180用什么型号代替：BD175,BD185,BD233,BD437,SDD373A,

MJE18价格

参考价格：￥5.0644

型号：MJE180 品牌：Central Semiconductor Co 备注：这里有MJE18多少钱，2024年最近7天走势，今日出价，今日竞价，MJE18批发/采购报价，MJE18行情走势销售排行榜，MJE18报价。

型号	功能描述	生产厂家&企业
MJE180	Silicon NPN Power Transistors DESCRIPTION ·WithTO-126package ·ComplementtotypeMJE170/171/172 APPLICATIONS ·Forlowpoweraudioamplifierandlowcurrenthighspeedswitchingapplications	SAVANTIC Savantic, Inc.
MJE180	isc Silicon NPN Power Transistor DESCRIPTION ·Collector–EmitterSustainingVoltage— :VCEO(SUS)=40V ·DCCurrentGain— :hFE=30(Min)@IC=0.5A =12(Min)@IC=1.5A ·ComplementtoTypeMJE170 APPLICATIONS ·Lowpoweraudioamplifier ·Lowcurrenthighspeedswit	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
MJE180	COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS ...designedforlowpoweramplifierandlowcurrent,highspeedswitchiiapplications. FEATURES: *Collector-EmitterSustainingVoHage- VCEO(SUS)=40V(Min)-MJE170.MJE180 =60V(Min)-MJE171.MJE181	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
MJE180	SILICON COMPLEMENTRY POWER TRANSISTOR	CentralCentral Semiconductor Corp 美国中央半导体
MJE180	PNP PLASTIC POWER TRANSISTORS MJE170,171,172PNPPLASTICPOWERTRANSISTORS MJE180,181,182NPNPLASTICPOWERTRANSISTORS	CDIL CDIL
MJE180	POWER TRANSISTORS(3.0A,40-80V,12.5W) COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS	MOSPEC MOSPEC
MJE180	Low Power Audio Amplifier Low Current High Speed Switching Applications LowCurrentHighSpeedSwitchingApplications	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
MJE18002	POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS SWITCHMODE™NPNBipolarPowerTransistor ForSwitchingPowerSupplyApplications TheMJE/MJF18002haveanapplicationsspecificstate–of–the–artdiedesignedforusein220VlineoperatedSwitchmodePowersuppliesandelectroniclightballasts.Thesehighvoltage/highspeedtransistorsofferth	MotorolaMotorola, Inc 摩托罗拉
MJE18002	POWER TRANSISTOR SWITCHMODENPNBipolarPowerTransistorForSwitchingPowerSupplyApplications TheMJE18002haveanapplicationsspecificstate−of−the−artdiedesignedforusein220VlineoperatedSwitchmodePowersuppliesandelectroniclightballasts. Features •ImprovedEfficiencyDuetoLowBaseDriveR	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJE18002	Silicon NPN Power Transistors DESCRIPTION ·WithTO-220package ·Highvoltage,highspeed APPLICATIONS ·Designedforusein220Vline-operatedswitchmodepowersuppliesandelectroniclightballast	SAVANTIC Savantic, Inc.
MJE18002	Silicon NPN Power Transistors DESCRIPTION ·WithTO-220package ·Highvoltage,highspeed APPLICATIONS ·Designedforusein220Vline-operatedswitchmodepowersuppliesandelectroniclightballast	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
MJE18002D2	POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS HighSpeed,HighGainBipolarNPNPowerTransistorwithIntegratedCollector-EmitterDiodeandBuilt-inEfficientAntisaturationNetwork TheMJE18002D2useanewlydevelopedtechnology,socalledH2BIP,todesignthestateofarttransistordedicatedtotheElectronicLightBallastandPFC*cir	MotorolaMotorola, Inc 摩托罗拉
MJE18002D2	POWER TRANSISTORS HighSpeed,HighGainBipolarNPNPowerTransistorwithIntegratedCollector-EmitterDiodeandBuilt-inEfficientAntisaturationNetwork TheMJE18002D2useanewlydevelopedtechnology,socalledH2BIP,todesignthestateofarttransistordedicatedtotheElectronicLightBallastandPFC*cir	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJE18002G	SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODENPNBipolarPowerTransistorForSwitchingPowerSupplyApplications TheMJE18002haveanapplicationsspecificstate−of−the−artdiedesignedforusein220VlineoperatedSwitchmodePowersuppliesandelectroniclightballasts. Features •ImprovedEfficiencyDuetoLowBaseDriveR	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJE18004	POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS POWERTRANSISTOR5.0AMPERES1000VOLTS35and75WATTS TheMJE/MJF18004haveanapplicationsspecificstate–of–the–artdiedesignedforusein220VlineoperatedSwitchmodePowersuppliesandelectroniclightballasts.Thishighvoltage/highspeedtransistorsofferthefollowing: •ImprovedEf	MotorolaMotorola, Inc 摩托罗拉
MJE18004	POWER TRANSISTOR SWITCHMODE NPNBipolarPowerTransistorForSwitchingPowerSupplyApplications TheMJE/MJF18004Ghaveanapplicationsspecificstate−of−the−artdiedesignedforusein220Vline−operatedSWITCHMODEPowersuppliesandelectroniclightballasts. Features ●ImprovedEfficiencyDuetoLowBaseD	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJE18004	Silicon NPN Power Transistors DESCRIPTION •WithTO-220package •Highvoltage,highspeed APPLICATIONS •Designedforusein220Vline-operated switchmodepowersuppliesandelectronic lightballasts	SAVANTIC Savantic, Inc.
MJE18004	NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPNBipolarPowerTransistorForSwitchingPowerSupplyApplications TheMJE/MJF18004Ghaveanapplicationsspecificstate−of−the−artdiedesignedforusein220Vline−operatedSWITCHMODEPowersuppliesandelectroniclightballasts. Features ●ImprovedEfficiencyDuetoLowBaseD	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJE18004	isc Silicon NPN Power Transistor DESCRIPTION •Collector-BaseBreakdownVoltage- :V(BR)CBO=1000V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforusein220Vline-operatedswitchmodepower suppliesandelectroniclightballasts	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
MJE18004	Silicon NPN Power Transistor DESCRIPTION •Collector-BaseBreakdownVoltage- :V(BR)CBO=1000V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforusein220Vline-operatedswitchmodepower suppliesandelectroniclightballasts	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
MJE18004D2	POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS TheMJE18004D2isstate–of–artHighSpeedHighgainBIPolartransistor(H2BIP). Highdynamiccharacteristicsandlottolotminimumspread(±150nsonstoragetime)makeitideallysuitableforlightballastapplications.Therefore,thereisnoneedtoguaranteeanhFEwindow. Mainfeatures	MotorolaMotorola, Inc 摩托罗拉
MJE18004D2	POWER TRANSISTORS TheMJE18004D2isstate–of–artHighSpeedHighgainBIPolartransistor(H2BIP).Highdynamiccharacteristicsandlottolotminimumspread(±150nsonstoragetime)makeitideallysuitableforlightballastapplications.Therefore,thereisnoneedtoguaranteeanhFEwindow. Mainfeatures:	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJE18004G	NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPNBipolarPowerTransistorForSwitchingPowerSupplyApplications TheMJE/MJF18004Ghaveanapplicationsspecificstate−of−the−artdiedesignedforusein220Vline−operatedSWITCHMODEPowersuppliesandelectroniclightballasts. Features ●ImprovedEfficiencyDuetoLowBaseD	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJE18006	POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS SWITCHMODE NPNBipolarPowerTransistor ForSwitchingPowerSupplyApplications TheMJE/MJF18006haveanapplicationsspecificstate–of–the–artdiedesignedforusein220Vline–operatedSwitchmodePowersuppliesandelectroniclightballasts.Thesehighvoltage/highspeedtransistors	MotorolaMotorola, Inc 摩托罗拉
MJE18006	POWER TRANSISTOR SWITCHMODENPNBipolarPowerTransistor ForSwitchingPowerSupplyApplications TheMJE/MJF18006haveanapplicationsspecificstate–of–the–artdiedesignedforusein220Vline–operatedSwitchmodePowersuppliesandelectroniclightballasts.Thesehighvoltage/highspeedtransistorso	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJE18006	Silicon NPN Power Transistors DESCRIPTION •WithTO-220Cpackage •Highvoltage,highspeed APPLICATIONS •Designedforusein220Vline-operated switchmodepowersuppliesandelectronic lightballasts.	SAVANTIC Savantic, Inc.
MJE18006	Silicon NPN Power Transistors DESCRIPTION •WithTO-220Cpackage •Highvoltage,highspeed APPLICATIONS •Designedforusein220Vline-operated switchmodepowersuppliesandelectronic lightballasts.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
MJE18006	Silicon NPN Power Transistors DESCRIPTION •WithTO-220Cpackage •Highvoltage,highspeed •Improvedefficiencyduetolowbase driverequirements: -HighandflatDCcurrentgainhFE -Fastswitching APPLICATIONS •Designedforusein220Vline-operated switchmodepowersuppliesandelectronic	JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司
MJE18006	Silicon NPN Power Transistor DESCRIPTION •Collector-BaseBreakdownVoltage- :V(BR)CBO=1000V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforusein220Vline-operatedswitchmodepower suppliesandelectroniclightballasts	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
MJE18006G	NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPNBipolarPowerTransistor ForSwitchingPowerSupplyApplications TheMJE18006Ghasanapplicationsspecificstate−of−the−artdiedesignedforusein220Vline−operatedSWITCHMODEPowersuppliesandelectroniclightballasts. Features •ImprovedEfficiencyDuetoLow	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJE18008	POWER TRANSISTOR SWITCHMODE NPNBipolarPowerTransistor ForSwitchingPowerSupplyApplications TheMJE/MJF18008Ghaveanapplicationsspecificstate−of−the−artdiedesignedforusein220Vline−operatedSWITCHMODEPowersuppliesandelectroniclightballasts. Features •ImprovedEfficiencyDuetoLowBase	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJE18008	POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS SWITCHMODE™ NPNBipolarPowerTransistorForSwitchingPowerSupplyApplications TheMJE/MJF18008haveanapplicationsspecificstate–of–the–artdiedesignedforusein220Vline–operatedSwitchmodePowersuppliesandelectroniclightballasts.Thesehighvoltage/highspeedtransistorsof	MotorolaMotorola, Inc 摩托罗拉
MJE18008	Silicon NPN Power Transistors DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeed APPLICATIONS ·Designedforusein220Vline-operatedswitchmodepowersuppliesandelectroniclightballasts	SAVANTIC Savantic, Inc.
MJE18008	Silicon NPN Power Transistors DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeed APPLICATIONS ·Designedforusein220Vline-operatedswitchmodepowersuppliesandelectroniclightballasts	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
MJE18008	Silicon NPN Power Transistor DESCRIPTION •Collector-BaseBreakdownVoltage- :V(BR)CBO=1000V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforusein220Vline-operatedswitchmodepower suppliesandelectroniclightballasts	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
MJE18008	NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPNBipolarPowerTransistor ForSwitchingPowerSupplyApplications TheMJE/MJF18008Ghaveanapplicationsspecificstate−of−the−artdiedesignedforusein220Vline−operatedSWITCHMODEPowersuppliesandelectroniclightballasts. Features •ImprovedEfficiencyDuetoLowBase	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJE18008	Silicon NPN Power Transistors DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeed ·Improvedefficiencyduetolowbasedriverequirements: -HighandflatDCcurrentgainhFE -Fastswitching APPLICATIONS ·Designedforusein220Vline-operatedswitchmodepowersuppliesandelectroniclightballasts.	JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司
MJE18008G	NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPNBipolarPowerTransistor ForSwitchingPowerSupplyApplications TheMJE/MJF18008Ghaveanapplicationsspecificstate−of−the−artdiedesignedforusein220Vline−operatedSWITCHMODEPowersuppliesandelectroniclightballasts. Features •ImprovedEfficiencyDuetoLowBase	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJE18009	POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS TheMJE/MJF18009hasanapplicationspecificstate–of–the–artdiedesignedforusein220Vline–operatedSwitchmodePowersuppliesandelectronicballast(“lightballast”).Thesehighvoltage/highspeedtransistorsexhibitthefollowingmainfeatures: •ImprovedEfficiencyDuetoLowBaseDrive	MotorolaMotorola, Inc 摩托罗拉
MJE18009	POWER TRANSISTORS TheMJE/MJF18009hasanapplicationspecificstate–of–the–artdiedesignedforusein220Vline–operatedSWITCHMODEPowersuppliesandelectronicballast(“lightballast”).Thesehighvoltage/highspeedtransistorsexhibitthefollowingmainfeatures: •ImprovedEfficiencyDuetoLowBaseDrive	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJE180G	Complementary Plastic Silicon Power Transistors ComplementaryPlasticSiliconPowerTransistors TheMJE170/180seriesisdesignedforlowpoweraudioamplifierandlowcurrent,highspeedswitchingapplications. Features •Collector−EmitterSustainingVoltage− VCEO(sus)=40Vdc−MJE170,MJE180 =60Vdc−MJE171,	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJE181	POWER TRANSISTORS(3.0A,40-80V,12.5W) COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS	MOSPEC MOSPEC
MJE181	3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS 3AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60–80VOLTS12.5WATTS ...designedforlowpoweraudioamplifierandlowcurrent,highspeedswitchingapplications. •Collector–EmitterSustainingVoltage— VCEO(sus)=60Vdc—MJE171,MJE181 VCEO(sus)=80Vdc—MJE172,MJE182	MotorolaMotorola, Inc 摩托罗拉
MJE181	POWER TRANSISTORS COMPLEMENTARY SILICON ComplementaryPlasticSiliconPowerTransistors TheMJE170/180seriesisdesignedforlowpoweraudioamplifierandlowcurrent,highspeedswitchingapplications. Features •Collector−EmitterSustainingVoltage− VCEO(sus)=40Vdc−MJE170,MJE180 =60Vdc−MJE171,	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJE181	Low Power Audio Amplifier Low Current High Speed Switching Applications LowCurrentHighSpeedSwitchingApplications	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
MJE181	Silicon NPN Power Transistors DESCRIPTION ·WithTO-126package ·ComplementtotypeMJE170/171/172 APPLICATIONS ·Forlowpoweraudioamplifierandlowcurrenthighspeedswitchingapplications	SAVANTIC Savantic, Inc.
MJE181	SILICON COMPLEMENTRY POWER TRANSISTOR	CentralCentral Semiconductor Corp 美国中央半导体
MJE181	COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS ...designedforlowpoweramplifierandlowcurrent,highspeedswitchiiapplications. FEATURES: *Collector-EmitterSustainingVoHage- VCEO(SUS)=40V(Min)-MJE170.MJE180 =60V(Min)-MJE171.MJE181	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
MJE181	PNP PLASTIC POWER TRANSISTORS MJE170,171,172PNPPLASTICPOWERTRANSISTORS MJE180,181,182NPNPLASTICPOWERTRANSISTORS	CDIL CDIL
MJE181G	Complementary Plastic Silicon Power Transistors ComplementaryPlasticSiliconPowerTransistors TheMJE170/180seriesisdesignedforlowpoweraudioamplifierandlowcurrent,highspeedswitchingapplications. Features •Collector−EmitterSustainingVoltage− VCEO(sus)=40Vdc−MJE170,MJE180 =60Vdc−MJE171,	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJE182	POWER TRANSISTORS(3.0A,40-80V,12.5W) COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS	MOSPEC MOSPEC
MJE182	POWER TRANSISTORS COMPLEMENTARY SILICON ComplementaryPlasticSiliconPowerTransistors TheMJE170/180seriesisdesignedforlowpoweraudioamplifierandlowcurrent,highspeedswitchingapplications. Features •Collector−EmitterSustainingVoltage− VCEO(sus)=40Vdc−MJE170,MJE180 =60Vdc−MJE171,	ONSEMION Semiconductor 安森美半导体安森美半导体公司
MJE182	COMPLEMENTARY SILICON POWER TRANSISTORS DESCRIPTION TheMJE172(PNPtype)andMJE182(NPNtype)aresiliconepitaxialplanar,complementarytransistorsinJedecSOT-32plasticpackage,theyaredesignedforlowpoweraudioamplifierandlowcurrent,highspeedswitchingapplications. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARY	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团
MJE182	3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS 3AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60–80VOLTS12.5WATTS ...designedforlowpoweraudioamplifierandlowcurrent,highspeedswitchingapplications. •Collector–EmitterSustainingVoltage— VCEO(sus)=60Vdc—MJE171,MJE181 VCEO(sus)=80Vdc—MJE172,MJE182	MotorolaMotorola, Inc 摩托罗拉
MJE182	Low Power Audio Amplifier Low Current High Speed Switching Applications LowCurrentHighSpeedSwitchingApplications	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司
MJE182	isc Silicon NPN Power Transistor DESCRIPTION ·Collector–EmitterSustainingVoltage—:VCEO(SUS)=80V ·DCCurrentGain—:hFE=30(Min)@IC=0.5A =12(Min)@IC=1.5A ·ComplementtoTypeMJE172 APPLICATIONS ·Lowpoweraudioamplifier ·Lowcurrenthighspeedswitchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
MJE182	COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS ...designedforlowpoweramplifierandlowcurrent,highspeedswitchiiapplications. FEATURES: *Collector-EmitterSustainingVoHage- VCEO(SUS)=40V(Min)-MJE170.MJE180 =60V(Min)-MJE171.MJE181	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
MJE182	PNP PLASTIC POWER TRANSISTORS MJE170,171,172PNPPLASTICPOWERTRANSISTORS MJE180,181,182NPNPLASTICPOWERTRANSISTORS	CDIL CDIL
MJE182	SILICON COMPLEMENTRY POWER TRANSISTOR	CentralCentral Semiconductor Corp 美国中央半导体
MJE182	Silicon NPN Power Transistors DESCRIPTION ·WithTO-126package ·ComplementtotypeMJE170/171/172 APPLICATIONS ·Forlowpoweraudioamplifierandlowcurrenthighspeedswitchingapplications	SAVANTIC Savantic, Inc.

MJE18产品属性

类型
描述
型号
MJE18
功能描述
两极晶体管 - BJT NPN Power
RoHS
否
制造商
STMicroelectronics
晶体管极性
PNP 集电极—基极电压
VCBO
集电极—发射极最大电压
VCEO
- 40 V 发射极 - 基极电压
VEBO
- 6 V
增益带宽产品fT
直流集电极/Base Gain hfe
Min
100 A
安装风格
SMD/SMT
封装/箱体
PowerFLAT 2 x 2

MJE18供应商更多...

更新时间：2024-5-26 23:44:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市纳立科技有限公司	MJE180STU		三年内		1983	纳立只做原装正品13590203865	询价
深圳市富利微电子科技有限公司	MJE18008G	ON/安森美	23+	TO-220AB	30000	原装正品公司现货,假一赔十!	询价
深圳诚思涵科技有限公司	MJE18004	ON	22+	TO-220	32350	深圳存库原装现货	询价
深圳市高捷芯城科技有限公司	MJE180G	onsemi(安森美)	23+	TO-225	1259	原厂订货渠道,支持BOM配单一站式服务	询价
深圳市得捷芯城科技有限公司	MJE180STU/MJE170	FAIRCHILD/仙童	23+	NA/	1138	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市凌旭科技有限公司	MJE18004D2G	ON	2016+	TO220	1348	只做原装,假一罚十,公司可开17%增值税发票!	询价
瀚佳科技(深圳)有限公司	MJE180	MOTOROLA	2020+	TO-220	16800	绝对原装进口现货,假一赔十,价格优势!?	询价
深圳市纳艾斯科技有限公司	MJE18004	MOT	2020+		80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
深圳市金芯世纪电子有限公司	MJE180	MOTOROLA/摩托罗拉	22+	TO126	100000	代理渠道/只做原装/可含税	询价
深圳市弘扬芯城科技有限公司	MJE180STU	onsemi(安森美)	23+	TO1263	6000		询价