The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP).

High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window.

Main features:

• Low Base Drive Requirement

• High Peak DC Current Gain (55 Typical) @ IC = 100 mA

• Extremely Low Storage Time Min/Max Guarantees Due to the

H2BIP Structure which Minimizes the Spread

• Integrated Collector–Emitter Free Wheeling Diode

• Fully Characterized and Guaranteed Dynamic VCE(sat)

• “6 Sigma” Process Providing Tight and Reproductible Parameter Spreads

It’s characteristics make it also suitable for PFC application.