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MJE180晶体管资料

MJE180别名：MJE180三极管、MJE180晶体管、MJE180晶体三极管
MJE180生产厂家：美国摩托罗拉半导体公司
MJE180制作材料：Si-NPN
MJE180性质：低频或音频放大（LF）_功率放大（L）
MJE180封装形式：直插封装
MJE180极限工作电压：40V
MJE180最大电流允许值：3A
MJE180最大工作频率：<1MHZ或未知
MJE180引脚数：3
MJE180最大耗散功率：12.5W
MJE180放大倍数：
MJE180图片代号：B-21
MJE180vtest：40
MJE180htest：999900
MJE180atest：3
MJE180wtest：12.5

MJE180代换 MJE180用什么型号代替：BD175,BD185,BD233,BD437,SDD373A,

MJE180价格

参考价格：￥5.0644

型号：MJE180 品牌：Central Semiconductor Co 备注：这里有MJE180多少钱，2026年最近7天走势，今日出价，今日竞价，MJE180批发/采购报价，MJE180行情走势销售排行榜，MJE180报价。

型号	功能描述	生产厂家企业	LOGO
MJE180	POWER TRANSISTORS(3.0A,40-80V,12.5W) COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS	MOSPEC 统懋	MOSPEC
MJE180	Low Power Audio Amplifier Low Current High Speed Switching Applications Low Current High Speed Switching Applications	FAIRCHILD 仙童半导体	FAIRCHILD
MJE180	Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type MJE170/171/172 APPLICATIONS ·For low power audio amplifier and low current high speed switching applications	SAVANTIC	SAVANTIC
MJE180	isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = 40 V ·DC Current Gain— : hFE = 30(Min) @ IC= 0.5 A = 12(Min) @ IC= 1.5 A ·Complement to Type MJE170 APPLICATIONS ·Low power audio amplifier ·Low current high speed swit	ISC 无锡固电	ISC
MJE180	COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS ... designed for low power amplifier and low current, high speed switchii applications. FEATURES: * Collector-Emitter Sustaining VoHage- VCEO(SUS) =40 V (Min) - MJE170.MJE180 = 60 V (Min) - MJE171.MJE181	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MJE180	SILICON COMPLEMENTRY POWER TRANSISTOR	CENTRAL	CENTRAL
MJE180	PNP PLASTIC POWER TRANSISTORS MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORS MJE180, 181, 182 NPN PLASTIC POWER TRANSISTORS	CDIL	CDIL
MJE180	Silicon NPN Power Transistors 文件：104.4 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
MJE180	Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch	CENTRAL	CENTRAL
MJE180	Trans GP BJT NPN 40V 3A 3-Pin TO-126 Box	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MJE180	三极管	MOSPEC 统懋	MOSPEC
MJE180	Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS 文件：83.18 Kbytes Page：6 Pages	ONSEMI 安森美半导体	ONSEMI
MJE18002	Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High voltage, high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballast	SAVANTIC	SAVANTIC
MJE18002	POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18002 have an applications specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors offer th	MOTOROLA 摩托罗拉	MOTOROLA
MJE18002	POWER TRANSISTOR SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002 have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base Drive R	ONSEMI 安森美半导体	ONSEMI
MJE18002	Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High voltage, high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballast	ISC 无锡固电	ISC
MJE18002D2	POWER TRANSISTORS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC* cir	ONSEMI 安森美半导体	ONSEMI
MJE18002D2	POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC* cir	MOTOROLA 摩托罗拉	MOTOROLA
MJE18002G	SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002 have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base Drive R	ONSEMI 安森美半导体	ONSEMI
MJE18004	Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) • High Switching Speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MJE18004	isc Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) • High Switching Speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts	ISC 无锡固电	ISC
MJE18004	POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. This high voltage/high speed transistors offer the following: • Improved Ef	MOTOROLA 摩托罗拉	MOTOROLA
MJE18004	POWER TRANSISTOR SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features ● Improved Efficiency Due to Low Base D	ONSEMI 安森美半导体	ONSEMI
MJE18004	Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • High voltage ,high speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts	SAVANTIC	SAVANTIC
MJE18004	NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features ● Improved Efficiency Due to Low Base D	ONSEMI 安森美半导体	ONSEMI
MJE18004D2	POWER TRANSISTORS The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main features:	ONSEMI 安森美半导体	ONSEMI
MJE18004D2	POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main features	MOTOROLA 摩托罗拉	MOTOROLA
MJE18004G	NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features ● Improved Efficiency Due to Low Base D	ONSEMI 安森美半导体	ONSEMI
MJE18006	Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High voltage ,high speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts.	ISC 无锡固电	ISC
MJE18006	Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High voltage ,high speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts.	SAVANTIC	SAVANTIC
MJE18006	POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18006 have an applications specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors	MOTOROLA 摩托罗拉	MOTOROLA
MJE18006	POWER TRANSISTOR SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18006 have an applications specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors o	ONSEMI 安森美半导体	ONSEMI
MJE18006	Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High voltage ,high speed • Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic	JMNIC 锦美电子	JMNIC
MJE18006	Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- :V(BR)CBO=1000V(Min) • High Switching Speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MJE18006G	NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18006G has an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low	ONSEMI 安森美半导体	ONSEMI
MJE18008	Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- :V(BR)CBO= 1000V(Min) • High Switching Speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MJE18008	Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ,high speed ·Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts.	JMNIC 锦美电子	JMNIC
MJE18008	POWER TRANSISTOR SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base	ONSEMI 安森美半导体	ONSEMI
MJE18008	POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors of	MOTOROLA 摩托罗拉	MOTOROLA
MJE18008	Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage, high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts	SAVANTIC	SAVANTIC
MJE18008	Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage, high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts	ISC 无锡固电	ISC
MJE18008	NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base	ONSEMI 安森美半导体	ONSEMI
MJE18008G	NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base	ONSEMI 安森美半导体	ONSEMI
MJE18009	POWER TRANSISTORS The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated SWITCHMODE Power supplies and electronic ballast (“light ballast”). These high voltage/high speed transistors exhibit the following main features: • Improved Efficiency Due to Low Base Drive	ONSEMI 安森美半导体	ONSEMI
MJE18009	POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic ballast (“light ballast”). These high voltage/high speed transistors exhibit the following main features: • Improved Efficiency Due to Low Base Drive	MOTOROLA 摩托罗拉	MOTOROLA
MJE180G	Complementary Plastic Silicon Power Transistors Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,	ONSEMI 安森美半导体	ONSEMI
MJE18002	Silicon NPN Power Transistors 文件：103 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
MJE18002	封装/外壳：TO-220-3 包装：散装描述：TRANS NPN 450V 2A TO220 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
MJE18002G	封装/外壳：TO-220-3 包装：散装描述：TRANS NPN 450V 2A TO220 分立半导体产品晶体管 - 双极性晶体管（BJT）- 单个	ONSEMI 安森美半导体	ONSEMI
MJE18004	Switch-mode NPN Bipolar Power Transistor 文件：151.19 Kbytes Page：11 Pages	ONSEMI 安森美半导体	ONSEMI
MJE18004	Silicon NPN Power Transistors 文件：103.36 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
MJE18004_15	Switch-mode NPN Bipolar Power Transistor 文件：151.19 Kbytes Page：11 Pages	ONSEMI 安森美半导体	ONSEMI
MJE18004G	Switch-mode NPN Bipolar Power Transistor 文件：151.19 Kbytes Page：11 Pages	ONSEMI 安森美半导体	ONSEMI
MJE18006	Silicon NPN Power Transistors 文件：103.08 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
MJE18006_15	Silicon NPN Power Transistors 文件：100.56 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
MJE18008	Switch-mode NPN Bipolar Power Transistor 文件：145.27 Kbytes Page：10 Pages	ONSEMI 安森美半导体	ONSEMI
MJE18008	Silicon NPN Power Transistors 文件：102.73 Kbytes Page：3 Pages	SAVANTIC	SAVANTIC
MJE18008_15	Silicon NPN Power Transistors 文件：100.04 Kbytes Page：3 Pages	JMNIC 锦美电子	JMNIC
MJE18008_15	Switch-mode NPN Bipolar Power Transistor 文件：145.27 Kbytes Page：10 Pages	ONSEMI 安森美半导体	ONSEMI
MJE18008G	Switch-mode NPN Bipolar Power Transistor 文件：145.27 Kbytes Page：10 Pages	ONSEMI 安森美半导体	ONSEMI

MJE180产品属性

类型
描述
Pb-free：
Pb
Status：
Active
Polarity：
NPN
Type：
General Purpose
VCE(sat) Max (V)：
1.7
IC Cont. (A)：
3
VCEO Min (V)：
40
VCBO (V)：
60
VEBO (V)：
7
VBE(sat) (V)：
2
VBE(on) (V)：
1.2
hFE Min：
50
hFE Max：
250
fT Min (MHz)：
50
PTM Max (W)：
12.5
Package Type：
TO-126-3

MJE180供应商更多...

更新时间：2026-5-15 11:44:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市盈慧通电子有限公司	MJE18004	ON(安森美)	2511		5285	电子元器件采购降本 30%!公司原厂直采,砍掉中间差价	询价
深圳市华来深电子有限公司	MJE180	MOTOLOR	23+	TO126	8560	受权代理!全新原装现货特价热卖!	询价
深圳市高捷芯城科技有限公司	MJE180G	onsemi(安森美)	24+	TO-225	1259	原厂订货渠道,支持BOM配单一站式服务	询价
中天科工半导体（深圳）有限公司	MJE180	ON	20+	TO-126	38900	原装优势主营型号-可开原型号增税票	询价
深圳市安富世纪电子有限公司	MJE180	FSC	23+	TO-126F	12242	全新原装正品现货,支持订货	询价
标准国际(香港)有限公司	MJE180	MJE180	25+	32	32		询价
贸泽芯城（深圳）电子科技有限公司	MJE18002	ON/安森美	23+	TO-TO-220	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市昊创电子有限公司	MJE180	LT/凌特	专业铁帽	TO-225AA	89	原装铁帽专营,代理渠道量大可订货	询价
深圳市坤融电子科技有限公司	MJE180G	ONSEMI/安森美	2025+		2500	原装进口价格优请找坤融电子!	询价
深圳市旺财半导体有限公司	MJE18004D2G	ON	TO220	25+	15258	原装现货库存QQ:373621633 3616872778	询价

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MJE180晶体管资料

MJE180价格

MJE180产品属性

MJE180供应商更多...

MJE180芯片相关品牌

MJE180规格书下载地址

MJE180参数引脚图相关

MJE180数据表相关新闻

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