MJE180晶体管资料

  • MJE180别名:MJE180三极管、MJE180晶体管、MJE180晶体三极管

  • MJE180生产厂家:美国摩托罗拉半导体公司

  • MJE180制作材料:Si-NPN

  • MJE180性质:低频或音频放大 (LF)_功率放大 (L)

  • MJE180封装形式:直插封装

  • MJE180极限工作电压:40V

  • MJE180最大电流允许值:3A

  • MJE180最大工作频率:<1MHZ或未知

  • MJE180引脚数:3

  • MJE180最大耗散功率:12.5W

  • MJE180放大倍数

  • MJE180图片代号:B-21

  • MJE180vtest:40

  • MJE180htest:999900

  • MJE180atest:3

  • MJE180wtest:12.5

  • MJE180代换 MJE180用什么型号代替:BD175,BD185,BD233,BD437,SDD373A,

MJE180价格

参考价格:¥5.0644

型号:MJE180 品牌:Central Semiconductor Co 备注:这里有MJE180多少钱,2024年最近7天走势,今日出价,今日竞价,MJE180批发/采购报价,MJE180行情走势销售排行榜,MJE180报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MJE180

POWERTRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS

MOSPEC

MOSPEC

MOSPEC
MJE180

LowPowerAudioAmplifierLowCurrentHighSpeedSwitchingApplications

LowCurrentHighSpeedSwitchingApplications

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJE180

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·ComplementtotypeMJE170/171/172 APPLICATIONS ·Forlowpoweraudioamplifierandlowcurrenthighspeedswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
MJE180

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector–EmitterSustainingVoltage— :VCEO(SUS)=40V ·DCCurrentGain— :hFE=30(Min)@IC=0.5A =12(Min)@IC=1.5A ·ComplementtoTypeMJE170 APPLICATIONS ·Lowpoweraudioamplifier ·Lowcurrenthighspeedswit

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJE180

COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS

COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS ...designedforlowpoweramplifierandlowcurrent,highspeedswitchiiapplications. FEATURES: *Collector-EmitterSustainingVoHage- VCEO(SUS)=40V(Min)-MJE170.MJE180 =60V(Min)-MJE171.MJE181

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
MJE180

SILICONCOMPLEMENTRYPOWERTRANSISTOR

CentralCentral Semiconductor Corp

美国中央半导体

Central
MJE180

PNPPLASTICPOWERTRANSISTORS

MJE170,171,172PNPPLASTICPOWERTRANSISTORS MJE180,181,182NPNPLASTICPOWERTRANSISTORS

CDIL

CDIL

CDIL
MJE180

SiliconNPNPowerTransistors

文件:104.4 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
MJE180

ComplementaryPlasticSiliconPowerTransistors40??60??80VOLTS12.5WATTS

文件:83.18 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220package ·Highvoltage,highspeed APPLICATIONS ·Designedforusein220Vline-operatedswitchmodepowersuppliesandelectroniclightballast

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220package ·Highvoltage,highspeed APPLICATIONS ·Designedforusein220Vline-operatedswitchmodepowersuppliesandelectroniclightballast

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

POWERTRANSISTOR2.0AMPERES1000VOLTS25and50WATTS

SWITCHMODE™NPNBipolarPowerTransistor ForSwitchingPowerSupplyApplications TheMJE/MJF18002haveanapplicationsspecificstate–of–the–artdiedesignedforusein220VlineoperatedSwitchmodePowersuppliesandelectroniclightballasts.Thesehighvoltage/highspeedtransistorsofferth

MotorolaMotorola, Inc

摩托罗拉

Motorola

POWERTRANSISTOR

SWITCHMODENPNBipolarPowerTransistorForSwitchingPowerSupplyApplications TheMJE18002haveanapplicationsspecificstate−of−the−artdiedesignedforusein220VlineoperatedSwitchmodePowersuppliesandelectroniclightballasts. Features •ImprovedEfficiencyDuetoLowBaseDriveR

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

POWERTRANSISTORS

HighSpeed,HighGainBipolarNPNPowerTransistorwithIntegratedCollector-EmitterDiodeandBuilt-inEfficientAntisaturationNetwork TheMJE18002D2useanewlydevelopedtechnology,socalledH2BIP*,todesignthestateofarttransistordedicatedtotheElectronicLightBallastandPFC**cir

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

POWERTRANSISTORS2AMPERES1000VOLTS50WATTS

HighSpeed,HighGainBipolarNPNPowerTransistorwithIntegratedCollector-EmitterDiodeandBuilt-inEfficientAntisaturationNetwork TheMJE18002D2useanewlydevelopedtechnology,socalledH2BIP*,todesignthestateofarttransistordedicatedtotheElectronicLightBallastandPFC**cir

MotorolaMotorola, Inc

摩托罗拉

Motorola

SWITCHMODENPNBipolarPowerTransistorForSwitchingPowerSupplyApplications

SWITCHMODENPNBipolarPowerTransistorForSwitchingPowerSupplyApplications TheMJE18002haveanapplicationsspecificstate−of−the−artdiedesignedforusein220VlineoperatedSwitchmodePowersuppliesandelectroniclightballasts. Features •ImprovedEfficiencyDuetoLowBaseDriveR

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconNPNPowerTransistor

DESCRIPTION •Collector-BaseBreakdownVoltage- :V(BR)CBO=1000V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforusein220Vline-operatedswitchmodepower suppliesandelectroniclightballasts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

iscSiliconNPNPowerTransistor

DESCRIPTION •Collector-BaseBreakdownVoltage- :V(BR)CBO=1000V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforusein220Vline-operatedswitchmodepower suppliesandelectroniclightballasts

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220package •Highvoltage,highspeed APPLICATIONS •Designedforusein220Vline-operated switchmodepowersuppliesandelectronic lightballasts

SAVANTIC

Savantic, Inc.

SAVANTIC

NPNBipolarPowerTransistorForSwitchingPowerSupplyApplications

SWITCHMODE NPNBipolarPowerTransistorForSwitchingPowerSupplyApplications TheMJE/MJF18004Ghaveanapplicationsspecificstate−of−the−artdiedesignedforusein220Vline−operatedSWITCHMODEPowersuppliesandelectroniclightballasts. Features ●ImprovedEfficiencyDuetoLowBaseD

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

POWERTRANSISTOR

SWITCHMODE NPNBipolarPowerTransistorForSwitchingPowerSupplyApplications TheMJE/MJF18004Ghaveanapplicationsspecificstate−of−the−artdiedesignedforusein220Vline−operatedSWITCHMODEPowersuppliesandelectroniclightballasts. Features ●ImprovedEfficiencyDuetoLowBaseD

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

POWERTRANSISTOR5.0AMPERES1000VOLTS35and75WATTS

POWERTRANSISTOR5.0AMPERES1000VOLTS35and75WATTS TheMJE/MJF18004haveanapplicationsspecificstate–of–the–artdiedesignedforusein220VlineoperatedSwitchmodePowersuppliesandelectroniclightballasts.Thishighvoltage/highspeedtransistorsofferthefollowing: •ImprovedEf

MotorolaMotorola, Inc

摩托罗拉

Motorola

POWERTRANSISTORS5AMPERES1000VOLTS75WATTS

TheMJE18004D2isstate–of–artHighSpeedHighgainBIPolartransistor(H2BIP). Highdynamiccharacteristicsandlottolotminimumspread(±150nsonstoragetime)makeitideallysuitableforlightballastapplications.Therefore,thereisnoneedtoguaranteeanhFEwindow. Mainfeatures

MotorolaMotorola, Inc

摩托罗拉

Motorola

POWERTRANSISTORS

TheMJE18004D2isstate–of–artHighSpeedHighgainBIPolartransistor(H2BIP).Highdynamiccharacteristicsandlottolotminimumspread(±150nsonstoragetime)makeitideallysuitableforlightballastapplications.Therefore,thereisnoneedtoguaranteeanhFEwindow. Mainfeatures:

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

NPNBipolarPowerTransistorForSwitchingPowerSupplyApplications

SWITCHMODE NPNBipolarPowerTransistorForSwitchingPowerSupplyApplications TheMJE/MJF18004Ghaveanapplicationsspecificstate−of−the−artdiedesignedforusein220Vline−operatedSWITCHMODEPowersuppliesandelectroniclightballasts. Features ●ImprovedEfficiencyDuetoLowBaseD

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconNPNPowerTransistor

DESCRIPTION •Collector-BaseBreakdownVoltage- :V(BR)CBO=1000V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforusein220Vline-operatedswitchmodepower suppliesandelectroniclightballasts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

POWERTRANSISTOR

SWITCHMODENPNBipolarPowerTransistor ForSwitchingPowerSupplyApplications TheMJE/MJF18006haveanapplicationsspecificstate–of–the–artdiedesignedforusein220Vline–operatedSwitchmodePowersuppliesandelectroniclightballasts.Thesehighvoltage/highspeedtransistorso

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

POWERTRANSISTOR6.0AMPERES1000VOLTS40and100WATTS

SWITCHMODE NPNBipolarPowerTransistor ForSwitchingPowerSupplyApplications TheMJE/MJF18006haveanapplicationsspecificstate–of–the–artdiedesignedforusein220Vline–operatedSwitchmodePowersuppliesandelectroniclightballasts.Thesehighvoltage/highspeedtransistors

MotorolaMotorola, Inc

摩托罗拉

Motorola

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Cpackage •Highvoltage,highspeed APPLICATIONS •Designedforusein220Vline-operated switchmodepowersuppliesandelectronic lightballasts.

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Cpackage •Highvoltage,highspeed •Improvedefficiencyduetolowbase driverequirements: -HighandflatDCcurrentgainhFE -Fastswitching APPLICATIONS •Designedforusein220Vline-operated switchmodepowersuppliesandelectronic

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

DESCRIPTION •WithTO-220Cpackage •Highvoltage,highspeed APPLICATIONS •Designedforusein220Vline-operated switchmodepowersuppliesandelectronic lightballasts.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNBipolarPowerTransistorForSwitchingPowerSupplyApplications

SWITCHMODE NPNBipolarPowerTransistor ForSwitchingPowerSupplyApplications TheMJE18006Ghasanapplicationsspecificstate−of−the−artdiedesignedforusein220Vline−operatedSWITCHMODEPowersuppliesandelectroniclightballasts. Features •ImprovedEfficiencyDuetoLow

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconNPNPowerTransistor

DESCRIPTION •Collector-BaseBreakdownVoltage- :V(BR)CBO=1000V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforusein220Vline-operatedswitchmodepower suppliesandelectroniclightballasts

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeed APPLICATIONS ·Designedforusein220Vline-operatedswitchmodepowersuppliesandelectroniclightballasts

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

NPNBipolarPowerTransistorForSwitchingPowerSupplyApplications

SWITCHMODE NPNBipolarPowerTransistor ForSwitchingPowerSupplyApplications TheMJE/MJF18008Ghaveanapplicationsspecificstate−of−the−artdiedesignedforusein220Vline−operatedSWITCHMODEPowersuppliesandelectroniclightballasts. Features •ImprovedEfficiencyDuetoLowBase

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeed ·Improvedefficiencyduetolowbasedriverequirements: -HighandflatDCcurrentgainhFE -Fastswitching APPLICATIONS ·Designedforusein220Vline-operatedswitchmodepowersuppliesandelectroniclightballasts.

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeed APPLICATIONS ·Designedforusein220Vline-operatedswitchmodepowersuppliesandelectroniclightballasts

SAVANTIC

Savantic, Inc.

SAVANTIC

POWERTRANSISTOR

SWITCHMODE NPNBipolarPowerTransistor ForSwitchingPowerSupplyApplications TheMJE/MJF18008Ghaveanapplicationsspecificstate−of−the−artdiedesignedforusein220Vline−operatedSWITCHMODEPowersuppliesandelectroniclightballasts. Features •ImprovedEfficiencyDuetoLowBase

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

POWERTRANSISTOR8.0AMPERES1000VOLTS45and125WATTS

SWITCHMODE™ NPNBipolarPowerTransistorForSwitchingPowerSupplyApplications TheMJE/MJF18008haveanapplicationsspecificstate–of–the–artdiedesignedforusein220Vline–operatedSwitchmodePowersuppliesandelectroniclightballasts.Thesehighvoltage/highspeedtransistorsof

MotorolaMotorola, Inc

摩托罗拉

Motorola

NPNBipolarPowerTransistorForSwitchingPowerSupplyApplications

SWITCHMODE NPNBipolarPowerTransistor ForSwitchingPowerSupplyApplications TheMJE/MJF18008Ghaveanapplicationsspecificstate−of−the−artdiedesignedforusein220Vline−operatedSWITCHMODEPowersuppliesandelectroniclightballasts. Features •ImprovedEfficiencyDuetoLowBase

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

POWERTRANSISTORS10AMPERES1000VOLTS50and150WATTS

TheMJE/MJF18009hasanapplicationspecificstate–of–the–artdiedesignedforusein220Vline–operatedSwitchmodePowersuppliesandelectronicballast(“lightballast”).Thesehighvoltage/highspeedtransistorsexhibitthefollowingmainfeatures: •ImprovedEfficiencyDuetoLowBaseDrive

MotorolaMotorola, Inc

摩托罗拉

Motorola

POWERTRANSISTORS

TheMJE/MJF18009hasanapplicationspecificstate–of–the–artdiedesignedforusein220Vline–operatedSWITCHMODEPowersuppliesandelectronicballast(“lightballast”).Thesehighvoltage/highspeedtransistorsexhibitthefollowingmainfeatures: •ImprovedEfficiencyDuetoLowBaseDrive

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementaryPlasticSiliconPowerTransistors

ComplementaryPlasticSiliconPowerTransistors TheMJE170/180seriesisdesignedforlowpoweraudioamplifierandlowcurrent,highspeedswitchingapplications. Features •Collector−EmitterSustainingVoltage− VCEO(sus)=40Vdc−MJE170,MJE180 =60Vdc−MJE171,

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconNPNPowerTransistors

文件:103 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

封装/外壳:TO-220-3 包装:散装 描述:TRANS NPN 450V 2A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

封装/外壳:TO-220-3 包装:散装 描述:TRANS NPN 450V 2A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconNPNPowerTransistors

文件:103.36 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

Switch-modeNPNBipolarPowerTransistor

文件:151.19 Kbytes Page:11 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Switch-modeNPNBipolarPowerTransistor

文件:151.19 Kbytes Page:11 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Switch-modeNPNBipolarPowerTransistor

文件:151.19 Kbytes Page:11 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconNPNPowerTransistors

文件:103.08 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

SiliconNPNPowerTransistors

文件:100.56 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

SiliconNPNPowerTransistors

文件:102.73 Kbytes Page:3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC

Switch-modeNPNBipolarPowerTransistor

文件:145.27 Kbytes Page:10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

Switch-modeNPNBipolarPowerTransistor

文件:145.27 Kbytes Page:10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SiliconNPNPowerTransistors

文件:100.04 Kbytes Page:3 Pages

JMNICQuanzhou Jinmei Electronic Co.,Ltd.

泉州锦美泉州锦美电子有限公司

JMNIC

Switch-modeNPNBipolarPowerTransistor

文件:145.27 Kbytes Page:10 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

ComplementaryPlasticSiliconPowerTransistors40??60??80VOLTS12.5WATTS

文件:83.18 Kbytes Page:6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI

SHIELDEDSMTPOWERINDUCTORS

●FEATURE VarioushighpowerinductorareSuperior tobehighsaturationforsurfacemounting ●APPLICATIONS 2DC/DCconverterpowersupply, Telecommunicationequipment

PRODUCTWELLProductwell Precision Elect.CO.,LTD

寶德華股台灣寶德華股有限公司

PRODUCTWELL

1.3WattsAxialLeadedZenerDiodes

VOLTAGERANGE:2.4-200VPOWER:1.3Watts Features ●CompleteVoltageRange2.4to200Volts ●Highpeakreversepowerdissipation ●Highreliability ●Lowleakagecurrent

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE

MJE180产品属性

  • 类型

    描述

  • 型号

    MJE180

  • 功能描述

    两极晶体管 - BJT NPN Power

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2024-4-27 9:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
23+
TO126F
50000
全新原装正品现货,支持订货
ON/安森美
21+
TO220
15000
全新原装现货,假一赔十
FAIRCHILD/仙童
TO126F
265209
假一罚十原包原标签常备现货!
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
FAIRCHILDONSEMICONDUCTOR
22+
NA
12680
ON/安森美三极管
22+
NA
6060
16年电子元件现货供应商 终端BOM表可配单提供样品
23+
N/A
90050
正品授权货源可靠
MOTOROLA
2020+
TO-220
16800
绝对原装进口现货,假一赔十,价格优势!?
ON
17+
TO-220
9888
只做原装,现货库存
ON/安森美
2021/2022+
NA
8000
原厂原装现货订货价格优势终端BOM表可配单提供样品

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