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MJE180晶体管资料
MJE180别名：MJE180三极管、MJE180晶体管、MJE180晶体三极管
MJE180生产厂家：美国摩托罗拉半导体公司
MJE180制作材料：Si-NPN
MJE180性质：低频或音频放大 （LF）_功率放大 （L）
MJE180封装形式：直插封装
MJE180极限工作电压：40V
MJE180最大电流允许值：3A
MJE180最大工作频率：<1MHZ或未知
MJE180引脚数：3
MJE180最大耗散功率：12.5W
MJE180放大倍数：
MJE180图片代号：B-21
MJE180vtest：40
MJE180htest：999900
- MJE180atest：3
MJE180wtest：12.5
MJE180代换 MJE180用什么型号代替：BD175,BD185,BD233,BD437,SDD373A,
MJE180价格
参考价格：￥5.0644
型号：MJE180 品牌：Central Semiconductor Co 备注：这里有MJE180多少钱，2025年最近7天走势，今日出价，今日竞价，MJE180批发/采购报价，MJE180行情走势销售排行榜，MJE180报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
MJE180 | POWER TRANSISTORS(3.0A,40-80V,12.5W) COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS | MOSPEC 统懋 |   | |
MJE180 | Low Power Audio Amplifier Low Current High Speed Switching Applications Low Current High Speed Switching Applications | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
MJE180 | Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type MJE170/171/172 APPLICATIONS ·For low power audio amplifier and low current high speed switching applications | SAVANTIC | | |
MJE180 | isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage— : VCEO(SUS) = 40 V ·DC Current Gain— : hFE = 30(Min) @ IC= 0.5 A = 12(Min) @ IC= 1.5 A ·Complement to Type MJE170 APPLICATIONS ·Low power audio amplifier ·Low current high speed swit | ISC 无锡固电 | | |
MJE180 | COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS ... designed for low power amplifier and low current, high speed switchii applications. FEATURES: * Collector-Emitter Sustaining VoHage- VCEO(SUS) =40 V (Min) - MJE170.MJE180 = 60 V (Min) - MJE171.MJE181 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
MJE180 | SILICON COMPLEMENTRY POWER TRANSISTOR
| Central | | |
MJE180 | PNP PLASTIC POWER TRANSISTORS MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORS MJE180, 181, 182 NPN PLASTIC POWER TRANSISTORS | CDIL | | |
MJE180 | Silicon NPN Power Transistors 文件：104.4 Kbytes Page：3 Pages | SAVANTIC | | |
MJE180 | Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS 文件：83.18 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | |
Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High voltage, high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballast | SAVANTIC | | ||
POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18002 have an applications specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors offer th | Motorola 摩托罗拉 | | ||
POWER TRANSISTOR SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002 have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base Drive R | ONSEMI 安森美半导体 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High voltage, high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballast | ISC 无锡固电 | | ||
POWER TRANSISTORS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC** cir | ONSEMI 安森美半导体 | | ||
POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC** cir | Motorola 摩托罗拉 | | ||
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002 have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base Drive R | ONSEMI 安森美半导体 | | ||
isc Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) • High Switching Speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) • High Switching Speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220 package • High voltage ,high speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts | SAVANTIC | | ||
NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features ● Improved Efficiency Due to Low Base D | ONSEMI 安森美半导体 | | ||
POWER TRANSISTOR SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features ● Improved Efficiency Due to Low Base D | ONSEMI 安森美半导体 | | ||
POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state–of–the–art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. This high voltage/high speed transistors offer the following: • Improved Ef | Motorola 摩托罗拉 | | ||
POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main features | Motorola 摩托罗拉 | | ||
POWER TRANSISTORS The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main features: | ONSEMI 安森美半导体 | | ||
NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18004G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features ● Improved Efficiency Due to Low Base D | ONSEMI 安森美半导体 | | ||
Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- :V(BR)CBO=1000V(Min) • High Switching Speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
POWER TRANSISTOR SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18006 have an applications specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors o | ONSEMI 安森美半导体 | | ||
POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18006 have an applications specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors | Motorola 摩托罗拉 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High voltage ,high speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. | ISC 无锡固电 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High voltage ,high speed • Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-220C package • High voltage ,high speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. | SAVANTIC | | ||
NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18006G has an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low | ONSEMI 安森美半导体 | | ||
Silicon NPN Power Transistor DESCRIPTION • Collector-Base Breakdown Voltage- :V(BR)CBO= 1000V(Min) • High Switching Speed APPLICATIONS • Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage, high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts | SAVANTIC | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ,high speed ·Improved efficiency due to low base drive requirements: -High and flat DC current gain hFE -Fast switching APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts. | JMNIC 锦美电子 | | ||
Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage, high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts | ISC 无锡固电 | | ||
NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base | ONSEMI 安森美半导体 | | ||
POWER TRANSISTOR SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base | ONSEMI 安森美半导体 | | ||
POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors of | Motorola 摩托罗拉 | | ||
NPN Bipolar Power Transistor For Switching Power Supply Applications SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base | ONSEMI 安森美半导体 | | ||
POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic ballast (“light ballast”). These high voltage/high speed transistors exhibit the following main features: • Improved Efficiency Due to Low Base Drive | Motorola 摩托罗拉 | | ||
POWER TRANSISTORS The MJE/MJF18009 has an application specific state–of–the–art die designed for use in 220 V line–operated SWITCHMODE Power supplies and electronic ballast (“light ballast”). These high voltage/high speed transistors exhibit the following main features: • Improved Efficiency Due to Low Base Drive | ONSEMI 安森美半导体 | | ||
Complementary Plastic Silicon Power Transistors Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171, | ONSEMI 安森美半导体 | | ||
Silicon NPN Power Transistors 文件：103 Kbytes Page：3 Pages | SAVANTIC | | ||
封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN 450V 2A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
封装/外壳：TO-220-3 包装：散装 描述：TRANS NPN 450V 2A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | ||
Silicon NPN Power Transistors 文件：103.36 Kbytes Page：3 Pages | SAVANTIC | | ||
Switch-mode NPN Bipolar Power Transistor 文件：151.19 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
Switch-mode NPN Bipolar Power Transistor 文件：151.19 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
Switch-mode NPN Bipolar Power Transistor 文件：151.19 Kbytes Page：11 Pages | ONSEMI 安森美半导体 | | ||
Silicon NPN Power Transistors 文件：103.08 Kbytes Page：3 Pages | SAVANTIC | | ||
Silicon NPN Power Transistors 文件：100.56 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Switch-mode NPN Bipolar Power Transistor 文件：145.27 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Silicon NPN Power Transistors 文件：102.73 Kbytes Page：3 Pages | SAVANTIC | | ||
Switch-mode NPN Bipolar Power Transistor 文件：145.27 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Silicon NPN Power Transistors 文件：100.04 Kbytes Page：3 Pages | JMNIC 锦美电子 | | ||
Switch-mode NPN Bipolar Power Transistor 文件：145.27 Kbytes Page：10 Pages | ONSEMI 安森美半导体 | | ||
Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS 文件：83.18 Kbytes Page：6 Pages | ONSEMI 安森美半导体 | | ||
SHIELDED SMT POWER INDUCTORS ● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment | PRODUCTWELL | | ||
1.3 Watts Axial Leaded Zener Diodes VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current | SUNMATE 森美特 | |
MJE180产品属性
- 类型
描述
- 型号
MJE180
- 功能描述
两极晶体管 - BJT NPN Power
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
24+ |
TO-225 |
1259 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
FAIRCHILD/仙童 |
24+ |
NA/ |
1138 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ON |
2016+ |
TO220 |
1348 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
FAIRCHILD/仙童 |
2023+ |
TO-126 |
6895 |
原厂全新正品旗舰店优势现货 |
|||
MOTOROLA/摩托罗拉 |
22+ |
TO126 |
100000 |
代理渠道/只做原装/可含税 |
|||
MOTOROLA/摩托罗拉 |
25+ |
TO-225AATO-126 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
ON/安森美 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
FAIRCHILD/仙童 |
99+ |
TO-126F |
12153 |
||||
ON |
25+ |
NA |
518000 |
明嘉莱只做原装正品现货 |
|||
ON |
25+23+ |
TO220 |
44233 |
绝对原装正品全新进口深圳现货 |
MJE180规格书下载地址
MJE180参数引脚图相关
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