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MJE180晶体管资料
MJE180别名:MJE180三极管、MJE180晶体管、MJE180晶体三极管
MJE180生产厂家:美国摩托罗拉半导体公司
MJE180制作材料:Si-NPN
MJE180性质:低频或音频放大 (LF)_功率放大 (L)
MJE180封装形式:直插封装
MJE180极限工作电压:40V
MJE180最大电流允许值:3A
MJE180最大工作频率:<1MHZ或未知
MJE180引脚数:3
MJE180最大耗散功率:12.5W
MJE180放大倍数:
MJE180图片代号:B-21
MJE180vtest:40
MJE180htest:999900
- MJE180atest:3
MJE180wtest:12.5
MJE180代换 MJE180用什么型号代替:BD175,BD185,BD233,BD437,SDD373A,
MJE180价格
参考价格:¥5.0644
型号:MJE180 品牌:Central Semiconductor Co 备注:这里有MJE180多少钱,2024年最近7天走势,今日出价,今日竞价,MJE180批发/采购报价,MJE180行情走势销售排行榜,MJE180报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
MJE180 | POWERTRANSISTORS(3.0A,40-80V,12.5W) COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS | MOSPEC MOSPEC | ||
MJE180 | LowPowerAudioAmplifierLowCurrentHighSpeedSwitchingApplications LowCurrentHighSpeedSwitchingApplications | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
MJE180 | SiliconNPNPowerTransistors DESCRIPTION ·WithTO-126package ·ComplementtotypeMJE170/171/172 APPLICATIONS ·Forlowpoweraudioamplifierandlowcurrenthighspeedswitchingapplications | SAVANTIC Savantic, Inc. | ||
MJE180 | iscSiliconNPNPowerTransistor DESCRIPTION ·Collector–EmitterSustainingVoltage— :VCEO(SUS)=40V ·DCCurrentGain— :hFE=30(Min)@IC=0.5A =12(Min)@IC=1.5A ·ComplementtoTypeMJE170 APPLICATIONS ·Lowpoweraudioamplifier ·Lowcurrenthighspeedswit | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
MJE180 | COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS ...designedforlowpoweramplifierandlowcurrent,highspeedswitchiiapplications. FEATURES: *Collector-EmitterSustainingVoHage- VCEO(SUS)=40V(Min)-MJE170.MJE180 =60V(Min)-MJE171.MJE181 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
MJE180 | SILICONCOMPLEMENTRYPOWERTRANSISTOR
| CentralCentral Semiconductor Corp 美国中央半导体 | ||
MJE180 | PNPPLASTICPOWERTRANSISTORS MJE170,171,172PNPPLASTICPOWERTRANSISTORS MJE180,181,182NPNPLASTICPOWERTRANSISTORS | CDIL CDIL | ||
MJE180 | SiliconNPNPowerTransistors 文件:104.4 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | ||
MJE180 | ComplementaryPlasticSiliconPowerTransistors40??60??80VOLTS12.5WATTS 文件:83.18 Kbytes Page:6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220package ·Highvoltage,highspeed APPLICATIONS ·Designedforusein220Vline-operatedswitchmodepowersuppliesandelectroniclightballast | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220package ·Highvoltage,highspeed APPLICATIONS ·Designedforusein220Vline-operatedswitchmodepowersuppliesandelectroniclightballast | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
POWERTRANSISTOR2.0AMPERES1000VOLTS25and50WATTS SWITCHMODE™NPNBipolarPowerTransistor ForSwitchingPowerSupplyApplications TheMJE/MJF18002haveanapplicationsspecificstate–of–the–artdiedesignedforusein220VlineoperatedSwitchmodePowersuppliesandelectroniclightballasts.Thesehighvoltage/highspeedtransistorsofferth | MotorolaMotorola, Inc 摩托罗拉 | |||
POWERTRANSISTOR SWITCHMODENPNBipolarPowerTransistorForSwitchingPowerSupplyApplications TheMJE18002haveanapplicationsspecificstate−of−the−artdiedesignedforusein220VlineoperatedSwitchmodePowersuppliesandelectroniclightballasts. Features •ImprovedEfficiencyDuetoLowBaseDriveR | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
POWERTRANSISTORS HighSpeed,HighGainBipolarNPNPowerTransistorwithIntegratedCollector-EmitterDiodeandBuilt-inEfficientAntisaturationNetwork TheMJE18002D2useanewlydevelopedtechnology,socalledH2BIP*,todesignthestateofarttransistordedicatedtotheElectronicLightBallastandPFC**cir | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
POWERTRANSISTORS2AMPERES1000VOLTS50WATTS HighSpeed,HighGainBipolarNPNPowerTransistorwithIntegratedCollector-EmitterDiodeandBuilt-inEfficientAntisaturationNetwork TheMJE18002D2useanewlydevelopedtechnology,socalledH2BIP*,todesignthestateofarttransistordedicatedtotheElectronicLightBallastandPFC**cir | MotorolaMotorola, Inc 摩托罗拉 | |||
SWITCHMODENPNBipolarPowerTransistorForSwitchingPowerSupplyApplications SWITCHMODENPNBipolarPowerTransistorForSwitchingPowerSupplyApplications TheMJE18002haveanapplicationsspecificstate−of−the−artdiedesignedforusein220VlineoperatedSwitchmodePowersuppliesandelectroniclightballasts. Features •ImprovedEfficiencyDuetoLowBaseDriveR | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconNPNPowerTransistor DESCRIPTION •Collector-BaseBreakdownVoltage- :V(BR)CBO=1000V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforusein220Vline-operatedswitchmodepower suppliesandelectroniclightballasts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
iscSiliconNPNPowerTransistor DESCRIPTION •Collector-BaseBreakdownVoltage- :V(BR)CBO=1000V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforusein220Vline-operatedswitchmodepower suppliesandelectroniclightballasts | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220package •Highvoltage,highspeed APPLICATIONS •Designedforusein220Vline-operated switchmodepowersuppliesandelectronic lightballasts | SAVANTIC Savantic, Inc. | |||
NPNBipolarPowerTransistorForSwitchingPowerSupplyApplications SWITCHMODE NPNBipolarPowerTransistorForSwitchingPowerSupplyApplications TheMJE/MJF18004Ghaveanapplicationsspecificstate−of−the−artdiedesignedforusein220Vline−operatedSWITCHMODEPowersuppliesandelectroniclightballasts. Features ●ImprovedEfficiencyDuetoLowBaseD | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
POWERTRANSISTOR SWITCHMODE NPNBipolarPowerTransistorForSwitchingPowerSupplyApplications TheMJE/MJF18004Ghaveanapplicationsspecificstate−of−the−artdiedesignedforusein220Vline−operatedSWITCHMODEPowersuppliesandelectroniclightballasts. Features ●ImprovedEfficiencyDuetoLowBaseD | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
POWERTRANSISTOR5.0AMPERES1000VOLTS35and75WATTS POWERTRANSISTOR5.0AMPERES1000VOLTS35and75WATTS TheMJE/MJF18004haveanapplicationsspecificstate–of–the–artdiedesignedforusein220VlineoperatedSwitchmodePowersuppliesandelectroniclightballasts.Thishighvoltage/highspeedtransistorsofferthefollowing: •ImprovedEf | MotorolaMotorola, Inc 摩托罗拉 | |||
POWERTRANSISTORS5AMPERES1000VOLTS75WATTS TheMJE18004D2isstate–of–artHighSpeedHighgainBIPolartransistor(H2BIP). Highdynamiccharacteristicsandlottolotminimumspread(±150nsonstoragetime)makeitideallysuitableforlightballastapplications.Therefore,thereisnoneedtoguaranteeanhFEwindow. Mainfeatures | MotorolaMotorola, Inc 摩托罗拉 | |||
POWERTRANSISTORS TheMJE18004D2isstate–of–artHighSpeedHighgainBIPolartransistor(H2BIP).Highdynamiccharacteristicsandlottolotminimumspread(±150nsonstoragetime)makeitideallysuitableforlightballastapplications.Therefore,thereisnoneedtoguaranteeanhFEwindow. Mainfeatures: | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
NPNBipolarPowerTransistorForSwitchingPowerSupplyApplications SWITCHMODE NPNBipolarPowerTransistorForSwitchingPowerSupplyApplications TheMJE/MJF18004Ghaveanapplicationsspecificstate−of−the−artdiedesignedforusein220Vline−operatedSWITCHMODEPowersuppliesandelectroniclightballasts. Features ●ImprovedEfficiencyDuetoLowBaseD | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconNPNPowerTransistor DESCRIPTION •Collector-BaseBreakdownVoltage- :V(BR)CBO=1000V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforusein220Vline-operatedswitchmodepower suppliesandelectroniclightballasts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
POWERTRANSISTOR SWITCHMODENPNBipolarPowerTransistor ForSwitchingPowerSupplyApplications TheMJE/MJF18006haveanapplicationsspecificstate–of–the–artdiedesignedforusein220Vline–operatedSwitchmodePowersuppliesandelectroniclightballasts.Thesehighvoltage/highspeedtransistorso | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
POWERTRANSISTOR6.0AMPERES1000VOLTS40and100WATTS SWITCHMODE NPNBipolarPowerTransistor ForSwitchingPowerSupplyApplications TheMJE/MJF18006haveanapplicationsspecificstate–of–the–artdiedesignedforusein220Vline–operatedSwitchmodePowersuppliesandelectroniclightballasts.Thesehighvoltage/highspeedtransistors | MotorolaMotorola, Inc 摩托罗拉 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220Cpackage •Highvoltage,highspeed APPLICATIONS •Designedforusein220Vline-operated switchmodepowersuppliesandelectronic lightballasts. | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220Cpackage •Highvoltage,highspeed •Improvedefficiencyduetolowbase driverequirements: -HighandflatDCcurrentgainhFE -Fastswitching APPLICATIONS •Designedforusein220Vline-operated switchmodepowersuppliesandelectronic | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION •WithTO-220Cpackage •Highvoltage,highspeed APPLICATIONS •Designedforusein220Vline-operated switchmodepowersuppliesandelectronic lightballasts. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPNBipolarPowerTransistorForSwitchingPowerSupplyApplications SWITCHMODE NPNBipolarPowerTransistor ForSwitchingPowerSupplyApplications TheMJE18006Ghasanapplicationsspecificstate−of−the−artdiedesignedforusein220Vline−operatedSWITCHMODEPowersuppliesandelectroniclightballasts. Features •ImprovedEfficiencyDuetoLow | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconNPNPowerTransistor DESCRIPTION •Collector-BaseBreakdownVoltage- :V(BR)CBO=1000V(Min) •HighSwitchingSpeed APPLICATIONS •Designedforusein220Vline-operatedswitchmodepower suppliesandelectroniclightballasts | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeed APPLICATIONS ·Designedforusein220Vline-operatedswitchmodepowersuppliesandelectroniclightballasts | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
NPNBipolarPowerTransistorForSwitchingPowerSupplyApplications SWITCHMODE NPNBipolarPowerTransistor ForSwitchingPowerSupplyApplications TheMJE/MJF18008Ghaveanapplicationsspecificstate−of−the−artdiedesignedforusein220Vline−operatedSWITCHMODEPowersuppliesandelectroniclightballasts. Features •ImprovedEfficiencyDuetoLowBase | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeed ·Improvedefficiencyduetolowbasedriverequirements: -HighandflatDCcurrentgainhFE -Fastswitching APPLICATIONS ·Designedforusein220Vline-operatedswitchmodepowersuppliesandelectroniclightballasts. | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-220Cpackage ·Highvoltage,highspeed APPLICATIONS ·Designedforusein220Vline-operatedswitchmodepowersuppliesandelectroniclightballasts | SAVANTIC Savantic, Inc. | |||
POWERTRANSISTOR SWITCHMODE NPNBipolarPowerTransistor ForSwitchingPowerSupplyApplications TheMJE/MJF18008Ghaveanapplicationsspecificstate−of−the−artdiedesignedforusein220Vline−operatedSWITCHMODEPowersuppliesandelectroniclightballasts. Features •ImprovedEfficiencyDuetoLowBase | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
POWERTRANSISTOR8.0AMPERES1000VOLTS45and125WATTS SWITCHMODE™ NPNBipolarPowerTransistorForSwitchingPowerSupplyApplications TheMJE/MJF18008haveanapplicationsspecificstate–of–the–artdiedesignedforusein220Vline–operatedSwitchmodePowersuppliesandelectroniclightballasts.Thesehighvoltage/highspeedtransistorsof | MotorolaMotorola, Inc 摩托罗拉 | |||
NPNBipolarPowerTransistorForSwitchingPowerSupplyApplications SWITCHMODE NPNBipolarPowerTransistor ForSwitchingPowerSupplyApplications TheMJE/MJF18008Ghaveanapplicationsspecificstate−of−the−artdiedesignedforusein220Vline−operatedSWITCHMODEPowersuppliesandelectroniclightballasts. Features •ImprovedEfficiencyDuetoLowBase | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
POWERTRANSISTORS10AMPERES1000VOLTS50and150WATTS TheMJE/MJF18009hasanapplicationspecificstate–of–the–artdiedesignedforusein220Vline–operatedSwitchmodePowersuppliesandelectronicballast(“lightballast”).Thesehighvoltage/highspeedtransistorsexhibitthefollowingmainfeatures: •ImprovedEfficiencyDuetoLowBaseDrive | MotorolaMotorola, Inc 摩托罗拉 | |||
POWERTRANSISTORS TheMJE/MJF18009hasanapplicationspecificstate–of–the–artdiedesignedforusein220Vline–operatedSWITCHMODEPowersuppliesandelectronicballast(“lightballast”).Thesehighvoltage/highspeedtransistorsexhibitthefollowingmainfeatures: •ImprovedEfficiencyDuetoLowBaseDrive | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryPlasticSiliconPowerTransistors ComplementaryPlasticSiliconPowerTransistors TheMJE170/180seriesisdesignedforlowpoweraudioamplifierandlowcurrent,highspeedswitchingapplications. Features •Collector−EmitterSustainingVoltage− VCEO(sus)=40Vdc−MJE170,MJE180 =60Vdc−MJE171, | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconNPNPowerTransistors 文件:103 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
封装/外壳:TO-220-3 包装:散装 描述:TRANS NPN 450V 2A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
封装/外壳:TO-220-3 包装:散装 描述:TRANS NPN 450V 2A TO220 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconNPNPowerTransistors 文件:103.36 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
Switch-modeNPNBipolarPowerTransistor 文件:151.19 Kbytes Page:11 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Switch-modeNPNBipolarPowerTransistor 文件:151.19 Kbytes Page:11 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Switch-modeNPNBipolarPowerTransistor 文件:151.19 Kbytes Page:11 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconNPNPowerTransistors 文件:103.08 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
SiliconNPNPowerTransistors 文件:100.56 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
SiliconNPNPowerTransistors 文件:102.73 Kbytes Page:3 Pages | SAVANTIC Savantic, Inc. | |||
Switch-modeNPNBipolarPowerTransistor 文件:145.27 Kbytes Page:10 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
Switch-modeNPNBipolarPowerTransistor 文件:145.27 Kbytes Page:10 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SiliconNPNPowerTransistors 文件:100.04 Kbytes Page:3 Pages | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司 | |||
Switch-modeNPNBipolarPowerTransistor 文件:145.27 Kbytes Page:10 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
ComplementaryPlasticSiliconPowerTransistors40??60??80VOLTS12.5WATTS 文件:83.18 Kbytes Page:6 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
SHIELDEDSMTPOWERINDUCTORS ●FEATURE VarioushighpowerinductorareSuperior tobehighsaturationforsurfacemounting ●APPLICATIONS 2DC/DCconverterpowersupply, Telecommunicationequipment | PRODUCTWELLProductwell Precision Elect.CO.,LTD 寶德華股台灣寶德華股有限公司 | |||
1.3WattsAxialLeadedZenerDiodes VOLTAGERANGE:2.4-200VPOWER:1.3Watts Features ●CompleteVoltageRange2.4to200Volts ●Highpeakreversepowerdissipation ●Highreliability ●Lowleakagecurrent | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 |
MJE180产品属性
- 类型
描述
- 型号
MJE180
- 功能描述
两极晶体管 - BJT NPN Power
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
23+ |
TO126F |
50000 |
全新原装正品现货,支持订货 |
|||
ON/安森美 |
21+ |
TO220 |
15000 |
全新原装现货,假一赔十 |
|||
FAIRCHILD/仙童 |
TO126F |
265209 |
假一罚十原包原标签常备现货! |
||||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
FAIRCHILDONSEMICONDUCTOR |
22+ |
NA |
12680 |
||||
ON/安森美三极管 |
22+ |
NA |
6060 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
|||
23+ |
N/A |
90050 |
正品授权货源可靠 |
||||
MOTOROLA |
2020+ |
TO-220 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
ON |
17+ |
TO-220 |
9888 |
只做原装,现货库存 |
|||
ON/安森美 |
2021/2022+ |
NA |
8000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
MJE180规格书下载地址
MJE180参数引脚图相关
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MJE180数据表相关新闻
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