POWER TRANSISTORS

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC** cir

POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS

High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network The MJE18002D2 use a newly developed technology, so called H2BIP*, to design the state of art transistor dedicated to the Electronic Light Ballast and PFC** cir

POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS

POWER TRANSISTORS

POWER TRANSISTOR 2 AMPERES 1000 VOLTS, 50 WATTS Bipolar NPN Transistor

Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor (H2BIP). Tight dynamic characteristics and lot to lot mini