MJE181晶体管资料

  • MJE181别名:MJE181三极管、MJE181晶体管、MJE181晶体三极管

  • MJE181生产厂家:美国摩托罗拉半导体公司

  • MJE181制作材料:Si-NPN

  • MJE181性质:低频或音频放大 (LF)_功率放大 (L)

  • MJE181封装形式:直插封装

  • MJE181极限工作电压:60V

  • MJE181最大电流允许值:3A

  • MJE181最大工作频率:<1MHZ或未知

  • MJE181引脚数:3

  • MJE181最大耗散功率:12.5W

  • MJE181放大倍数

  • MJE181图片代号:B-21

  • MJE181vtest:60

  • MJE181htest:999900

  • MJE181atest:3

  • MJE181wtest:12.5

  • MJE181代换 MJE181用什么型号代替:BD177,BD187,BD235,BD439,SDD373B,

MJE181价格

参考价格:¥1.0028

型号:MJE181G 品牌:ONSemi 备注:这里有MJE181多少钱,2025年最近7天走势,今日出价,今日竞价,MJE181批发/采购报价,MJE181行情走势销售排行榜,MJE181报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MJE181

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

MOSPEC

统懋

MJE181

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

Motorola

摩托罗拉

MJE181

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

ONSEMI

安森美半导体

MJE181

Low Power Audio Amplifier Low Current High Speed Switching Applications

Low Current High Speed Switching Applications

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MJE181

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type MJE170/171/172 APPLICATIONS ·For low power audio amplifier and low current high speed switching applications

SAVANTIC

MJE181

SILICON COMPLEMENTRY POWER TRANSISTOR

Central

MJE181

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS ... designed for low power amplifier and low current, high speed switchii applications. FEATURES: * Collector-Emitter Sustaining VoHage- VCEO(SUS) =40 V (Min) - MJE170.MJE180 = 60 V (Min) - MJE171.MJE181

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MJE181

PNP PLASTIC POWER TRANSISTORS

MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORS MJE180, 181, 182 NPN PLASTIC POWER TRANSISTORS

CDIL

MJE181

Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS

文件:83.18 Kbytes Page:6 Pages

ONSEMI

安森美半导体

MJE181

Silicon NPN Power Transistors

文件:104.4 Kbytes Page:3 Pages

SAVANTIC

MJE181

isc Silicon NPN Power Transistor

文件:107.1 Kbytes Page:2 Pages

ISC

无锡固电

MJE181

封装/外壳:TO-225AA,TO-126-3 包装:散装 描述:TRANS NPN 60V 3A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Complementary Plastic Silicon Power Transistors

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

ONSEMI

安森美半导体

Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS

文件:83.18 Kbytes Page:6 Pages

ONSEMI

安森美半导体

封装/外壳:TO-225AA,TO-126-3 包装:带盒(TB) 描述:TRANS NPN 60V 3A TO126-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

PRODUCTWELL

Unbased Lens-End Lamps

Unbased Lens-End Lamps Unbased Lamps

GILWAY

MINIATURE FUSES - 5x20 mm

文件:88.23 Kbytes Page:2 Pages

Littelfuse

力特

Combination of Thin, Flexible, Solid Cu Conductors embedded between layers of Tough

文件:545.49 Kbytes Page:2 Pages

ARIES

Aries Electronics,inc

INSERT, THRU, REGULAR HEAD STYLE

文件:20.31 Kbytes Page:1 Pages

WITTEN

MJE181产品属性

  • 类型

    描述

  • 型号

    MJE181

  • 功能描述

    两极晶体管 - BJT 3A 60V 12.5W NPN

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-8-11 13:43:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON/安森美
24+
TO-225
2394
只做原厂渠道 可追溯货源
MOTOROLA/摩托罗拉
24+
TO-126
37935
郑重承诺只做原装进口现货
ON
24+
TO-126
6430
原装现货/欢迎来电咨询
ONSEMICONDU
24+
原装进口原厂原包接受订货
7145
原装现货假一罚十
FAIRCHILD/仙童
24+
TO-126F
60000
全新原装现货
MOT
24+
1494
FAIRCHILD
19+
TO-126F
9000
ON
23+
TO126
29387
全新原装正品现货,支持订货
ON(安森美)
2511
5424
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
MOT
21+
TO-126
1638
只做原装正品,不止网上数量,欢迎电话微信查询!

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