PNP PLASTIC POWER TRANSISTORS

MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORS MJE180, 181, 182 NPN PLASTIC POWER TRANSISTORS

SILICON COMPLEMENTRY POWER TRANSISTOR

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS ... designed for low power amplifier and low current, high speed switchii applications. FEATURES: * Collector-Emitter Sustaining VoHage- VCEO(SUS) =40 V (Min) - MJE170.MJE180 = 60 V (Min) - MJE171.MJE181

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type MJE170/171/172 APPLICATIONS ·For low power audio amplifier and low current high speed switching applications

Low Power Audio Amplifier Low Current High Speed Switching Applications

Low Current High Speed Switching Applications

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Trans GP BJT NPN 60V 3A 3-Pin TO-126 Box

三极管

Silicon NPN Power Transistors

文件：104.4 Kbytes Page：3 Pages

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 60V 3A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

isc Silicon NPN Power Transistor

文件：107.1 Kbytes Page：2 Pages

Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS

文件：83.18 Kbytes Page：6 Pages

Complementary Plastic Silicon Power Transistors

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS

文件：83.18 Kbytes Page：6 Pages

封装/外壳：TO-225AA，TO-126-3 包装：带盒（TB） 描述：TRANS NPN 60V 3A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

VHF variable capacitance diode

DESCRIPTION The BB181 is a variable capacitance diode, fabricated in planar technology and encapsulated in the SOD523 (SC-79) ultra small plastic SMD package. FEATURES • Excellent linearity • Ultra small plastic SMD package • C28: 1 pF; ratio: 14. APPLICATIONS • Electronic tuning in satelli

Silicon NPN Planar RF Transistor

Features • Low noise figure • High power gain • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC    and WEEE 2002/96/EC Applications    For low noise and high gain broadband amplifiers at    collector currents from 0.5 mA to 12 mA.