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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MJE18004D2 | POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main features | Motorola 摩托罗拉 |   | |
MJE18004D2 | POWER TRANSISTORS The MJE18004D2 is state–of–art High Speed High gain BIPolar transistor (H2BIP). High dynamic characteristics and lot to lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Main features: | ONSEMI 安森美半导体 | | |
MJE18004D2 | 封装/外壳：TO-220-3 包装：托盘 描述：TRANS NPN 450V 5A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
MJE18004D2 | POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS | ETC 知名厂家 | ETC | |
封装/外壳：TO-220-3 包装：托盘 描述：TRANS NPN 450V 5A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | |
MJE18004D2产品属性
- 类型
描述
- 型号
MJE18004D2
- 功能描述
两极晶体管 - BJT 5A 1000V 75W NPN
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
21+ |
TO220 |
7500 |
只做原装所有货源可以追溯原厂 |
|||
ON/安森美 |
18+ |
TO220 |
19444 |
全新原装现货,可出样品,可开增值税发票 |
|||
ON |
TO220 |
1348 |
正品原装--自家现货-实单可谈 |
||||
ON/安森美 |
24+ |
SOP8 |
9600 |
原装现货,优势供应,支持实单! |
|||
ON |
22+ |
SOT-263 |
3000 |
原装正品,支持实单 |
|||
ON/安森美 |
22+ |
TO220 |
6000 |
十年配单,只做原装 |
|||
ON |
24+ |
TO220 |
65200 |
一级代理/放心采购 |
|||
ON |
24+ |
TO-2203LEADSTANDA |
8866 |
||||
ON/安森美 |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
|||
- |
23+ |
NA |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
MJE18004D2芯片相关品牌
MJE18004D2规格书下载地址
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DdatasheetPDF页码索引
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