MJE182晶体管资料

  • MJE182别名:MJE182三极管、MJE182晶体管、MJE182晶体三极管

  • MJE182生产厂家:美国摩托罗拉半导体公司

  • MJE182制作材料:Si-NPN

  • MJE182性质:低频或音频放大 (LF)_功率放大 (L)

  • MJE182封装形式:直插封装

  • MJE182极限工作电压:80V

  • MJE182最大电流允许值:3A

  • MJE182最大工作频率:<1MHZ或未知

  • MJE182引脚数:3

  • MJE182最大耗散功率:12.5W

  • MJE182放大倍数

  • MJE182图片代号:B-21

  • MJE182vtest:80

  • MJE182htest:999900

  • MJE182atest:3

  • MJE182wtest:12.5

  • MJE182代换 MJE182用什么型号代替:BD179,BD189,BD237,BD441,SDD373C,

MJE182价格

参考价格:¥2.5035

型号:MJE182 品牌:STMicroelectronics 备注:这里有MJE182多少钱,2025年最近7天走势,今日出价,今日竞价,MJE182批发/采购报价,MJE182行情走势销售排行榜,MJE182报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MJE182

POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

MOSPEC

统懋

MJE182

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

ONSEMI

安森美半导体

MJE182

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type) are silicon epitaxial planar, complementary transistors in Jedec SOT-32 plastic package, they are designed for low power audio amplifier and low current, high speed switching applications. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY

STMICROELECTRONICS

意法半导体

MJE182

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

Motorola

摩托罗拉

MJE182

Low Power Audio Amplifier Low Current High Speed Switching Applications

Low Current High Speed Switching Applications

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MJE182

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type MJE170/171/172 APPLICATIONS ·For low power audio amplifier and low current high speed switching applications

SAVANTIC

MJE182

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage—: VCEO(SUS) = 80 V ·DC Current Gain—: hFE = 30(Min) @ IC= 0.5 A = 12(Min) @ IC= 1.5 A ·Complement to Type MJE172 APPLICATIONS ·Low power audio amplifier ·Low current high speed switching applications

ISC

无锡固电

MJE182

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS ... designed for low power amplifier and low current, high speed switchii applications. FEATURES: * Collector-Emitter Sustaining VoHage- VCEO(SUS) =40 V (Min) - MJE170.MJE180 = 60 V (Min) - MJE171.MJE181

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MJE182

PNP PLASTIC POWER TRANSISTORS

MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORS MJE180, 181, 182 NPN PLASTIC POWER TRANSISTORS

CDIL

MJE182

SILICON COMPLEMENTRY POWER TRANSISTOR

Central

MJE182

Silicon NPN Power Transistors

文件:104.4 Kbytes Page:3 Pages

SAVANTIC

MJE182

封装/外壳:TO-225AA,TO-126-3 包装:剪切带(CT)带盒(TB) 描述:TRANS NPN 80V 3A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

STMICROELECTRONICS

意法半导体

MJE182

Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS

文件:83.18 Kbytes Page:6 Pages

ONSEMI

安森美半导体

MJE182

COMPLEMENTARY SILICON POWER TRANSISTORS

文件:52.92 Kbytes Page:4 Pages

STMICROELECTRONICS

意法半导体

POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS

The MJE/MJF18204 have an application specific state–of–the–art die dedicated to the electronic ballast (“light ballast”) and power supply applications. • Improved Global Efficiency Due to Low Base Drive Requirements: — High and Flat DC Current Gain hFE — Fast Switching — No Coil Requi

Motorola

摩托罗拉

POWER TRANSISTORS

SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications The MJE/MJF18204 have an application specific state–of–the–art die dedicated to the electronic ballast (“light ballast”) and power supply applications. • Improved Global Efficiency Due

ONSEMI

安森美半导体

POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS

The MJE/MJF18206 have an application specific state–of–the–art die dedicated to the electronic ballast (“light ballast”) and power supply applications. • Improved Global Efficiency Due to Low Base Drive Requirements: — High and Flat DC Current Gain hFE — Fast Switching — No Coil Requi

Motorola

摩托罗拉

POWER TRANSISTORS

SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications The MJE/MJF18206 have an application specific state–of–the–art die dedicated to the electronic ballast (“light ballast”) and power supply applications. • Improved Global Efficiency Due

ONSEMI

安森美半导体

Complementary Plastic Silicon Power Transistors

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

ONSEMI

安森美半导体

isc Silicon NPN Power Transistor

文件:144.78 Kbytes Page:2 Pages

ISC

无锡固电

Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS

文件:83.18 Kbytes Page:6 Pages

ONSEMI

安森美半导体

封装/外壳:TO-225AA,TO-126-3 包装:散装 描述:TRANS NPN 80V 3A TO126-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

Premier Supplier of Electronic Hardware

文件:5.0379 Mbytes Page:60 Pages

ABBATRON

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

文件:115.71 Kbytes Page:2 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

2 3-CIRCUIT MATING CONNECTORS WITH PUSH-IN TERMINATIONS ALLOWS TOOL- FREE AND SIMPLE INSTALLATION AT OEM AND IN FIELD

文件:195.06 Kbytes Page:1 Pages

DBLECTRO

迪贝电子

2 3-CIRCUIT MATING CONNECTORS WITH PUSH-IN TERMINATIONS ALLOWS TOOL- FREE AND SIMPLE INSTALLATION AT OEM AND IN FIELD

文件:195.06 Kbytes Page:1 Pages

DBLECTRO

迪贝电子

Hybrid Conductive Polymer Aluminum Capacitors SMD (Chip), Low Impedance

文件:98.78 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技威世科技半导体

MJE182产品属性

  • 类型

    描述

  • 型号

    MJE182

  • 功能描述

    两极晶体管 - BJT NPN Gen Pur Power Sw

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-8-12 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ON(安森美)
24+
标准封装
17048
支持大陆交货,美金交易。原装现货库存。
ON
23+
TO-252
10000
全新原装假一赔十
ON/安森美
25+
TO-225-3
32000
ON/安森美全新特价MJE182G即刻询购立享优惠#长期有货
22+
TO126
100000
代理渠道/只做原装/可含税
ON(安森美)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ONSEMI
23+
NPN三极管/80V/3A/12.5W/
2200
正迈科技原装现货授权代理主营:IC电容.二三级管原装
FAIRCHILD/仙童
09+
TO-126F
975
只做原装正品
ST
0824+
TO-126
15
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MOTOROLA
94+
195
公司优势库存 热卖中!
ON
1725+
TO126
3256
科恒伟业!只做原装正品,假一赔十!

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