POWER TRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

POWER TRANSISTORS COMPLEMENTARY SILICON

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The MJE172 (PNP type) and MJE182 (NPN type) are silicon epitaxial planar, complementary transistors in Jedec SOT-32 plastic package, they are designed for low power audio amplifier and low current, high speed switching applications. ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5 WATTS

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60–80 VOLTS 12.5 WATTS . . . designed for low power audio amplifier and low current, high speed switching applications. • Collector–Emitter Sustaining Voltage — VCEO(sus) = 60 Vdc — MJE171, MJE181 VCEO(sus) = 80 Vdc — MJE172, MJE182

Low Power Audio Amplifier Low Current High Speed Switching Applications

Low Current High Speed Switching Applications

Silicon NPN Power Transistors

DESCRIPTION ·With TO-126 package ·Complement to type MJE170/171/172 APPLICATIONS ·For low power audio amplifier and low current high speed switching applications

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector–Emitter Sustaining Voltage—: VCEO(SUS) = 80 V ·DC Current Gain—: hFE = 30(Min) @ IC= 0.5 A = 12(Min) @ IC= 1.5 A ·Complement to Type MJE172 APPLICATIONS ·Low power audio amplifier ·Low current high speed switching applications

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS ... designed for low power amplifier and low current, high speed switchii applications. FEATURES: * Collector-Emitter Sustaining VoHage- VCEO(SUS) =40 V (Min) - MJE170.MJE180 = 60 V (Min) - MJE171.MJE181

PNP PLASTIC POWER TRANSISTORS

MJE170, 171, 172 PNP PLASTIC POWER TRANSISTORS MJE180, 181, 182 NPN PLASTIC POWER TRANSISTORS

SILICON COMPLEMENTRY POWER TRANSISTOR

Silicon NPN Power Transistors

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封装/外壳：TO-225AA，TO-126-3 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 80V 3A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Trans GP BJT NPN 80V 3A 3-Pin TO-126 Box

音频功放晶体管

三极管

Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS

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COMPLEMENTARY SILICON POWER TRANSISTORS

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POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS

The MJE/MJF18204 have an application specific state–of–the–art die dedicated to the electronic ballast (“light ballast”) and power supply applications. • Improved Global Efficiency Due to Low Base Drive Requirements: — High and Flat DC Current Gain hFE — Fast Switching — No Coil Requi

POWER TRANSISTORS

SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications The MJE/MJF18204 have an application specific state–of–the–art die dedicated to the electronic ballast (“light ballast”) and power supply applications. • Improved Global Efficiency Due

POWER TRANSISTORS 8 AMPERES 1200 VOLTS 40 and 100 WATTS

The MJE/MJF18206 have an application specific state–of–the–art die dedicated to the electronic ballast (“light ballast”) and power supply applications. • Improved Global Efficiency Due to Low Base Drive Requirements: — High and Flat DC Current Gain hFE — Fast Switching — No Coil Requi

POWER TRANSISTORS

SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications The MJE/MJF18206 have an application specific state–of–the–art die dedicated to the electronic ballast (“light ballast”) and power supply applications. • Improved Global Efficiency Due

Complementary Plastic Silicon Power Transistors

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

Complementary Plastic Silicon Power Transistors

Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • Collector−Emitter Sustaining Voltage − VCEO(sus) = 40 Vdc − MJE170, MJE180 = 60 Vdc − MJE171,

isc Silicon NPN Power Transistor

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Complementary Plastic Silicon Power Transistors 40 ??60 ??80 VOLTS 12.5 WATTS

文件：83.18 Kbytes Page：6 Pages

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 80V 3A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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Premier Supplier of Electronic Hardware

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RUGGED & LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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2 3-CIRCUIT MATING CONNECTORS WITH PUSH-IN TERMINATIONS ALLOWS TOOL- FREE AND SIMPLE INSTALLATION AT OEM AND IN FIELD

文件：195.06 Kbytes Page：1 Pages

2 3-CIRCUIT MATING CONNECTORS WITH PUSH-IN TERMINATIONS ALLOWS TOOL- FREE AND SIMPLE INSTALLATION AT OEM AND IN FIELD

文件：195.06 Kbytes Page：1 Pages