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MJE182晶体管资料

  • MJE182别名：MJE182三极管、MJE182晶体管、MJE182晶体三极管

  • MJE182生产厂家：美国摩托罗拉半导体公司

  • MJE182制作材料：Si-NPN

  • MJE182性质：低频或音频放大 （LF）_功率放大 （L）

  • MJE182封装形式：直插封装

  • MJE182极限工作电压：80V

  • MJE182最大电流允许值：3A

  • MJE182最大工作频率：<1MHZ或未知

  • MJE182引脚数：3

  • MJE182最大耗散功率：12.5W

  • MJE182放大倍数：

  • MJE182图片代号：B-21

  • MJE182vtest：80

  • MJE182htest：999900

  • MJE182atest：3

  • MJE182wtest：12.5

  • MJE182代换 MJE182用什么型号代替：BD179,BD189,BD237,BD441,SDD373C,

MJE182价格

参考价格：￥2.5035

型号：MJE182 品牌：STMicroelectronics 备注：这里有MJE182多少钱，2024年最近7天走势，今日出价，今日竞价，MJE182批发/采购报价，MJE182行情走势销售排行榜，MJE182报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MJE182

POWERTRANSISTORS(3.0A,40-80V,12.5W)

COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS

MOSPEC

MOSPEC

MOSPEC
MJE182

POWERTRANSISTORSCOMPLEMENTARYSILICON

ComplementaryPlasticSiliconPowerTransistors TheMJE170/180seriesisdesignedforlowpoweraudioamplifierandlowcurrent,highspeedswitchingapplications. Features •Collector−EmitterSustainingVoltage− VCEO(sus)=40Vdc−MJE170,MJE180 =60Vdc−MJE171,

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJE182

COMPLEMENTARYSILICONPOWERTRANSISTORS

DESCRIPTION TheMJE172(PNPtype)andMJE182(NPNtype)aresiliconepitaxialplanar,complementarytransistorsinJedecSOT-32plasticpackage,theyaredesignedforlowpoweraudioamplifierandlowcurrent,highspeedswitchingapplications. ■SGS-THOMSONPREFERREDSALESTYPES ■COMPLEMENTARY

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
MJE182

3AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60-80VOLTS12.5WATTS

3AMPEREPOWERTRANSISTORSCOMPLEMENTARYSILICON60–80VOLTS12.5WATTS ...designedforlowpoweraudioamplifierandlowcurrent,highspeedswitchingapplications. •Collector–EmitterSustainingVoltage— VCEO(sus)=60Vdc—MJE171,MJE181 VCEO(sus)=80Vdc—MJE172,MJE182

MotorolaMotorola, Inc

摩托罗拉

Motorola
MJE182

LowPowerAudioAmplifierLowCurrentHighSpeedSwitchingApplications

LowCurrentHighSpeedSwitchingApplications

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJE182

SiliconNPNPowerTransistors

DESCRIPTION ·WithTO-126package ·ComplementtotypeMJE170/171/172 APPLICATIONS ·Forlowpoweraudioamplifierandlowcurrenthighspeedswitchingapplications

SAVANTIC

Savantic, Inc.

SAVANTIC
MJE182

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector–EmitterSustainingVoltage—:VCEO(SUS)=80V ·DCCurrentGain—:hFE=30(Min)@IC=0.5A =12(Min)@IC=1.5A ·ComplementtoTypeMJE172 APPLICATIONS ·Lowpoweraudioamplifier ·Lowcurrenthighspeedswitchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJE182

COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS

COMPLEMENTARYSILICONPLASTICPOWERTRANSISTORS ...designedforlowpoweramplifierandlowcurrent,highspeedswitchiiapplications. FEATURES: *Collector-EmitterSustainingVoHage- VCEO(SUS)=40V(Min)-MJE170.MJE180 =60V(Min)-MJE171.MJE181

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

NJSEMI
MJE182

PNPPLASTICPOWERTRANSISTORS

MJE170,171,172PNPPLASTICPOWERTRANSISTORS MJE180,181,182NPNPLASTICPOWERTRANSISTORS

CDIL

CDIL

CDIL
MJE182

SILICONCOMPLEMENTRYPOWERTRANSISTOR

CentralCentral Semiconductor Corp

美国中央半导体

Central
MJE182

SiliconNPNPowerTransistors

文件：104.4 Kbytes Page：3 Pages

SAVANTIC

Savantic, Inc.

SAVANTIC
MJE182

封装/外壳：TO-225AA，TO-126-3 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 80V 3A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
MJE182

ComplementaryPlasticSiliconPowerTransistors40??60??80VOLTS12.5WATTS

文件：83.18 Kbytes Page：6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJE182

COMPLEMENTARYSILICONPOWERTRANSISTORS

文件：52.92 Kbytes Page：4 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
MJE18204

POWERTRANSISTORS5AMPERES1200VOLTS35and75WATTS

TheMJE/MJF18204haveanapplicationspecificstate–of–the–artdiededicatedtotheelectronicballast(“lightballast”)andpowersupplyapplications. •ImprovedGlobalEfficiencyDuetoLowBaseDriveRequirements: —HighandFlatDCCurrentGainhFE —FastSwitching —NoCoilRequi

MotorolaMotorola, Inc

摩托罗拉

Motorola
MJE18204

POWERTRANSISTORS

SWITCHMODE™NPNBipolarPowerTransistorforElectronic LightBallastandSwitchingPowerSupplyApplications TheMJE/MJF18204haveanapplicationspecificstate–of–the–artdiededicatedtotheelectronicballast(“lightballast”)andpowersupplyapplications. •ImprovedGlobalEfficiencyDue

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJE18206

POWERTRANSISTORS8AMPERES1200VOLTS40and100WATTS

TheMJE/MJF18206haveanapplicationspecificstate–of–the–artdiededicatedtotheelectronicballast(“lightballast”)andpowersupplyapplications. •ImprovedGlobalEfficiencyDuetoLowBaseDriveRequirements: —HighandFlatDCCurrentGainhFE —FastSwitching —NoCoilRequi

MotorolaMotorola, Inc

摩托罗拉

Motorola
MJE18206

POWERTRANSISTORS

SWITCHMODE™NPNBipolarPowerTransistorforElectronic LightBallastandSwitchingPowerSupplyApplications TheMJE/MJF18206haveanapplicationspecificstate–of–the–artdiededicatedtotheelectronicballast(“lightballast”)andpowersupplyapplications. •ImprovedGlobalEfficiencyDue

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJE182G

ComplementaryPlasticSiliconPowerTransistors

ComplementaryPlasticSiliconPowerTransistors TheMJE170/180seriesisdesignedforlowpoweraudioamplifierandlowcurrent,highspeedswitchingapplications. Features •Collector−EmitterSustainingVoltage− VCEO(sus)=40Vdc−MJE170,MJE180 =60Vdc−MJE171,

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJE182G

iscSiliconNPNPowerTransistor

文件：144.78 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJE182G

ComplementaryPlasticSiliconPowerTransistors40??60??80VOLTS12.5WATTS

文件：83.18 Kbytes Page：6 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJE182STU

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 80V 3A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
182CPHZ

HybridConductivePolymerAluminumCapacitorsSMD(Chip),LowImpedance

FEATURES •Longusefullife:upto10000hat105°C •VerylowESRandhighripplecurrent •Highvoltagesupto80V •SMD-versionwithbaseplate,lead(Pb)-freereflow solderable •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技

Vishay
182

RUGGEDandLIGHTWEIGHTALUMINUMBATTERYHOLDERS

文件：115.71 Kbytes Page：2 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
182

23-CIRCUITMATINGCONNECTORSWITHPUSH-INTERMINATIONSALLOWSTOOL-FREEANDSIMPLEINSTALLATIONATOEMANDINFIELD

文件：195.06 Kbytes Page：1 Pages

DBLECTRODB Lectro Inc

迪贝电子迪贝电子（上海）有限公司

DBLECTRO
182

23-CIRCUITMATINGCONNECTORSWITHPUSH-INTERMINATIONSALLOWSTOOL-FREEANDSIMPLEINSTALLATIONATOEMANDINFIELD

文件：195.06 Kbytes Page：1 Pages

DBLECTRODB Lectro Inc

迪贝电子迪贝电子（上海）有限公司

DBLECTRO
182CPHZ

HybridConductivePolymerAluminumCapacitorsSMD(Chip),LowImpedance

文件：98.78 Kbytes Page：6 Pages

VishayVishay Siliconix

威世科技

Vishay

MJE182产品属性

  • 类型

    描述

  • 型号

    MJE182

  • 功能描述

    两极晶体管 - BJT NPN Gen Pur Power Sw

  • RoHS

    否

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

MJE182供应商更多...

更新时间：2024-4-25 14:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市佳鑫美电子科技有限公司
MJE182
ST
22+
SOT-32
2789
原装优势!绝对公司现货!
询价
瀚佳科技(深圳)有限公司
MJE182
FAIRC
2020+
TO-126
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
深圳市振芯物联科技有限公司
MJE182
ST
22+
TO-126
28600
只做原装正品现货假一赔十一级代理
询价
深圳市瑞浩芯科技有限公司
MJE182
ST
20+
TO-126
25000
全新原装现货,假一赔十
询价
深圳市兴灿科技有限公司
MJE182
STM原厂目录
23+
SOT-32
28500
授权代理直销,原厂原装现货,假一罚十,特价销售
询价
深圳市润联芯城科技有限公司
MJE182STU
FAIRCHILD/仙童
09+
TO-126F
975
只做原装正品
询价
深圳市天芯威科技有限公司
MJE182G
ON/安森美
23+
N/A
25850
新到现货,只有原装
询价
深圳市百域芯科技有限公司
MJE182
ON/安森美
21+
TO-225AATO-126
30000
优势供应 实单必成 可13点增值税
询价
深圳市博浩通科技有限公司
MJE182
STMicro.
23+
SOT-32
7750
全新原装优势
询价
深圳市华博特电子有限公司
MJE182G
ONSEMI
23/22+
TO225
2000
全线可订货.含税开票
询价

MJE182芯片相关品牌

  • ABRACON
  • AD
  • HAMMOND
  • ICST
  • MOLEX7
  • Motorola
  • NIC
  • Sipex
  • STMICROELECTRONICS
  • SUNMATE
  • Temic
  • TRACOPOWER

MJE182规格书下载地址

MJE182参数引脚图相关

MJE182数据表相关新闻

DdatasheetPDF页码索引

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