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MJD12晶体管资料
MJD122别名：MJD122三极管、MJD122晶体管、MJD122晶体三极管
MJD122生产厂家：韩国三星公司
MJD122制作材料：Darl
MJD122性质：低频或音频放大 （LF）
MJD122封装形式：贴片封装
MJD122极限工作电压：
MJD122最大电流允许值：8A
MJD122最大工作频率：<1MHZ或未知
MJD122引脚数：3
MJD122最大耗散功率：20W
MJD122放大倍数：
MJD122图片代号：G-127
MJD122vtest：0
MJD122htest：999900
- MJD122atest：8
MJD122wtest：20
MJD122代换 MJD122用什么型号代替：
MJD12价格
参考价格：￥2.0956
型号：MJD122-1 品牌：STMicroelectronics 备注：这里有MJD12多少钱，2025年最近7天走势，今日出价，今日竞价，MJD12批发/采购报价，MJD12行情走势销售排行榜，MJD12报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur | Motorola 摩托罗拉 |   | ||
Complementary Darlington Power Transistors Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127 | ONSEMI 安森美半导体 | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T | STMICROELECTRONICS 意法半导体 | | ||
Complementary Darlington Power Transistors Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127 | Fairchild 仙童半导体 | | ||
Silicon NPN epitaxial planer Transistors Features • High DC Current Gain • Built-in a Damper Diode at E-C • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Infor | MCC | | ||
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low speed switching applications. | DCCOM 道全 | | ||
NPN PLASTIC ENCAPSULATE TRANSISTORS Features: * High DC current gain * Electrically similar to popular TIP122 * Built-in a damper diode at E-C | WEITRON | | ||
isc Silicon NPN Darlington Power Transistor DESCRIPTION · Low Collector-Emitter saturation voltage · Lead formed for surface mount applications · High DC current gain · 100 avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for general purpose amplifier and lo | ISC 无锡固电 | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Hammer Drivers,Audio Amplifiers Applications Power Linear and Switching Applications | TGS | | ||
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Designed for General Purpose Amplifier and Low Speed Switching Applications | CDIL | | ||
TRANSISTOR(NPN) TRANSISTOR（NPN） FEATURES ∙ High DC Current Gain ∙ Electrically Similar to Popular TIP122 ∙ Built-in a Damper Diode at E-C | JIANGSU 长电科技 | | ||
TO-252-2L P lastic-Encapsulate Transistors TRANSISTOR（ NPN） Feature ● High DC Current Gain ● Electrically Similar to Popular TIP122 ● Built-in a Damper Diode at E-C | HDSEMI 海德半导体 | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Hammer Drivers,Audio Amplifiers Applications Power Linear and Switching Applications | TGS | | ||
NPN Silicon Darlington Transistor FEATURES • High DC Current Gain • Electrically Similar to Popular TIP122 • Built-in a Damper Diode at E-C We declare that the material of product compliance with RoHS requirements. | FS | | ||
Silicon NPN Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 无锡固电 | | ||
SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur | Motorola 摩托罗拉 | | ||
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T | STMICROELECTRONICS 意法半导体 | | ||
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T | STMICROELECTRONICS 意法半导体 | | ||
Silicon NPN Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 无锡固电 | | ||
Silicon NPN Power Transistor DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 无锡固电 | | ||
NPN Silicon Darlington Transistor FEATURES • High DC Current Gain • Electrically Similar to Popular TIP122 • Built-in a Damper Diode at E-C We declare that the material of product compliance with RoHS requirements. | FS | | ||
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Designed for General Purpose Amplifier and Low Speed Switching Applications | CDIL | | ||
SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur | Motorola 摩托罗拉 | | ||
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T | STMICROELECTRONICS 意法半导体 | | ||
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T | STMICROELECTRONICS 意法半导体 | | ||
Silicon NPN epitaxial planer Transistors Features • High DC Current Gain • Built-in a Damper Diode at E-C • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Infor | MCC | | ||
Complementary Darlington Power Transistors Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127 | Fairchild 仙童半导体 | | ||
Complementary Darlington Power Transistors Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127 | ONSEMI 安森美半导体 | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T | STMICROELECTRONICS 意法半导体 | | ||
SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur | Motorola 摩托罗拉 | | ||
PNP (D-PACK FOR SURFACE MOUNT APPLICATIONS) D▪PACK FOR SURFACE MOUNT APPLICATIONS • High DC Current Gain • Built-in a Damper Diode at E-C • Load Formed for Surface Mount Applications (No Suffix) • Stright Lead (I•PACK, -1 Suffix) • Electrically Similar to Popular TIP127 | Samsung 三星 | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION • Low Collector-Emitter saturation voltage • Lead formed for surface mount applications • High DC current gain • 100 tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for general purpose amplifier and low spee | ISC 无锡固电 | | ||
D-PAK for Surface Mount Applications D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) • Electrically Similar to Popular TIP127 • Complement to MJD122 | Fairchild 仙童半导体 | | ||
PNP Silicon Darlington Transistor FEATURES • High DC Current Gain • Electrically Similar to Popular TIP127 • Built-in a Damper Diode at E-C We declare that the material of product compliance with RoHS requirements. | FS | | ||
TO-252-2L Plastic-Encapsulate Transistors FEATURES High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C | DGNJDZ 南晶电子 | | ||
Silicon PNP Power Transistor DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 无锡固电 | | ||
D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) • Electrically Similar to Popular TIP127 • Complement to MJD122 | SYC | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Hammer Drivers,Audio Amplifiers Applications Power Linear and Switching Applications | TGS | | ||
TRANSISTOR (PNP) TRANSISTOR (PNP) FEATURES ● High DC Current Gain ● Electrically Similar to Popular TIP127 ● Built-in a Damper Diode at E-C | JIANGSU 长电科技 | | ||
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Designed for General Purpose Amplifier and Low Speed Switching Applications | CDIL | | ||
Silicon PNP epitaxial planer Transistors Features • High DC Current Gain • Built-in a Damper Diode at E-C • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Infor | MCC | | ||
TO-252-2L P lastic-Encapsulate Transistors TRANSISTOR (PNP) Feature ● High DC Current Gain ● Electrically Similar to Popular TIP127 ● Built-in a Damper Diode at E-C | HDSEMI 海德半导体 | | ||
SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur | Motorola 摩托罗拉 | | ||
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T | STMICROELECTRONICS 意法半导体 | | ||
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T | STMICROELECTRONICS 意法半导体 | | ||
Silicon PNP Power Transistor DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 无锡固电 | | ||
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS Designed for General Purpose Amplifier and Low Speed Switching Applications | CDIL | | ||
SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur | Motorola 摩托罗拉 | | ||
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T | STMICROELECTRONICS 意法半导体 | | ||
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T | STMICROELECTRONICS 意法半导体 | | ||
D-PAK for Surface Mount Applications D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) • Electrically Similar to Popular TIP127 • Complement to MJD122 | Fairchild 仙童半导体 | | ||
Complementary Darlington Power Transistor Complementary Darlington Power Transistor DPAK For Surface Mount Applications Features Designed for general purpose amplifier and low speed switching applications. • Monolithic Construction With Built−in Base−Emitter Shunt Resistors • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • | ONSEMI 安森美半导体 | | ||
isc Silicon PNP Darlington Power Transistor DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= -4A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -120V(Min) • DPAK for Surface Mount Applications • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for general purpo | ISC 无锡固电 | | ||
Silicon PNP Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -120V(Min) APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. | ISC 无锡固电 | | ||
Complementary Darlington Power Transistor Complementary Darlington Power Transistor DPAK For Surface Mount Applications Features Designed for general purpose amplifier and low speed switching applications. • Monolithic Construction With Built−in Base−Emitter Shunt Resistors • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • | ONSEMI 安森美半导体 | | ||
Complementary Darlington Power Transistor Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features • Monolithic Construction With Built−in Base−Emitter Shunt Resistors • High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc • E | ONSEMI 安森美半导体 | | ||
达林顿管 | JSCJ 长晶科技 | |
MJD12产品属性
- 类型
描述
- 型号
MJD12
- 功能描述
达林顿晶体管 8A 100V Bipolar
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
TO-252 |
30000 |
只做原装进口假一赔十全部自己现货库存 |
|||
ON |
23+ |
TO252 |
2162 |
原装现货 样品免费送 期待您的来电咨询 |
|||
FSC |
19+ |
TO-252 |
58000 |
||||
ST |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
ON/安森美 |
25+ |
TO-252 |
15000 |
全新原装现货,价格优势 |
|||
原厂原包 |
24+ |
原装 |
38560 |
原装进口现货,工厂客户可以放款。17377264928微信同 |
|||
ON/安森美 |
23+ |
TO-252-3 |
12580 |
进口原装现货 |
|||
ON |
2430+ |
TO252 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ON/安森美 |
24+ |
TO252 |
33500 |
全新进口原装现货,假一罚十 |
|||
onsemi(安森美) |
24+ |
TO-252 |
2317 |
原厂订货渠道,支持BOM配单一站式服务 |
MJD12芯片相关品牌
MJD12规格书下载地址
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- MJ7161
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