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MJD12晶体管资料
MJD122别名：MJD122三极管、MJD122晶体管、MJD122晶体三极管
MJD122生产厂家：韩国三星公司
MJD122制作材料：Darl
MJD122性质：低频或音频放大 （LF）
MJD122封装形式：贴片封装
MJD122极限工作电压：
MJD122最大电流允许值：8A
MJD122最大工作频率：<1MHZ或未知
MJD122引脚数：3
MJD122最大耗散功率：20W
MJD122放大倍数：
MJD122图片代号：G-127
MJD122vtest：0
MJD122htest：999900
- MJD122atest：8
MJD122wtest：20
MJD122代换 MJD122用什么型号代替：
MJD12价格
参考价格：￥2.0956
型号：MJD122-1 品牌：STMicroelectronics 备注：这里有MJD12多少钱，2025年最近7天走势，今日出价，今日竞价，MJD12批发/采购报价，MJD12行情走势销售排行榜，MJD12报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionAvailablein16mmTapeandReel(“T4”Suffix) •Sur | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 |  |   | |
Complementary Darlington Power Transistors Features •D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications •ElectricallySimilartoPopularTIP122 •ComplementtoMJD127 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  | | |
Complementary Darlington Power Transistors Features •D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications •ElectricallySimilartoPopularTIP122 •ComplementtoMJD127 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
Silicon NPN epitaxial planer Transistors Features •HighDCCurrentGain •Built-inaDamperDiodeatE-C •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInfor | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 |  | | |
TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designedforuseingeneralpurposeamplifierandlowspeedswitchingapplications. | DCCOM Dc Components |  | | |
NPN PLASTIC ENCAPSULATE TRANSISTORS Features: *HighDCcurrentgain *ElectricallysimilartopopularTIP122 *Built-inadamperdiodeatE-C | WEITRON Weitron Technology |  | | |
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·LowCollector-Emittersaturationvoltage ·Leadformedforsurfacemountapplications ·HighDCcurrentgain ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ·Designedforgeneralpurposeamplifierandlo | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS HammerDrivers,AudioAmplifiersApplications PowerLinearandSwitchingApplications | TGS Tiger Electronic Co.,Ltd |  | | |
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications | CDIL Continental Device India Limited |  | | |
TRANSISTOR(NPN) TRANSISTOR（NPN） FEATURES ∙HighDCCurrentGain ∙ElectricallySimilartoPopularTIP122 ∙Built-inaDamperDiodeatE-C | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 |  | | |
TO-252-2L P lastic-Encapsulate Transistors TRANSISTOR（NPN） Feature ●HighDCCurrentGain ●ElectricallySimilartoPopularTIP122 ●Built-inaDamperDiodeatE-C | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 |  | | |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS HammerDrivers,AudioAmplifiersApplications PowerLinearandSwitchingApplications | TGS Tiger Electronic Co.,Ltd | | | |
NPN Silicon Darlington Transistor FEATURES •HighDCCurrentGain •ElectricallySimilartoPopularTIP122 •Built-inaDamperDiodeatE-C WedeclarethatthematerialofproductcompliancewithRoHSrequirements. | FS First Silicon Co., Ltd |  | | |
Silicon NPN Power Transistor DESCRIPTION ·HighDCcurrentgain ·Leadformedforsurfacemountapplications ·Built-inadamperdiodeatE-C ·ComplementaryPairsSimplifiesDesigns APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Silicon NPN Power Transistor DESCRIPTION ·HighDCcurrentgain ·Leadformedforsurfacemountapplications ·Built-inadamperdiodeatE-C ·ComplementaryPairsSimplifiesDesigns APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionAvailablein16mmTapeandReel(“T4”Suffix) •Sur | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
Silicon NPN Power Transistor DESCRIPTION ·HighDCcurrentgain ·Leadformedforsurfacemountapplications ·Built-inadamperdiodeatE-C ·ComplementaryPairsSimplifiesDesigns APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Silicon NPN Power Transistor DESCRIPTION ·HighDCcurrentgain ·Leadformedforsurfacemountapplications ·Built-inadamperdiodeatE-C ·ComplementaryPairsSimplifiesDesigns APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
NPN Silicon Darlington Transistor FEATURES •HighDCCurrentGain •ElectricallySimilartoPopularTIP122 •Built-inaDamperDiodeatE-C WedeclarethatthematerialofproductcompliancewithRoHSrequirements. | FS First Silicon Co., Ltd | | | |
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications | CDIL Continental Device India Limited | | | |
SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionAvailablein16mmTapeandReel(“T4”Suffix) •Sur | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
Silicon NPN epitaxial planer Transistors Features •HighDCCurrentGain •Built-inaDamperDiodeatE-C •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInfor | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | | |
Complementary Darlington Power Transistors Features •D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications •ElectricallySimilartoPopularTIP122 •ComplementtoMJD127 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionAvailablein16mmTapeandReel(“T4”Suffix) •Sur | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
PNP (D-PACK FOR SURFACE MOUNT APPLICATIONS) D▪PACKFORSURFACEMOUNTAPPLICATIONS •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LoadFormedforSurfaceMountApplications(NoSuffix) •StrightLead(I•PACK,-1Suffix) •ElectricallySimilartoPopularTIP127 | SamsungSamsung semiconductor 三星三星半导体 |  | | |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS HammerDrivers,AudioAmplifiersApplications PowerLinearandSwitchingApplications | TGS Tiger Electronic Co.,Ltd | | | |
TRANSISTOR (PNP) TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●ElectricallySimilartoPopularTIP127 ●Built-inaDamperDiodeatE-C | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | | | |
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications | CDIL Continental Device India Limited | | | |
Silicon PNP epitaxial planer Transistors Features •HighDCCurrentGain •Built-inaDamperDiodeatE-C •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInfor | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | | |
TO-252-2L P lastic-Encapsulate Transistors TRANSISTOR(PNP) Feature ●HighDCCurrentGain ●ElectricallySimilartoPopularTIP127 ●Built-inaDamperDiodeatE-C | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 | | | |
isc Silicon PNP Darlington Power Transistor DESCRIPTION •LowCollector-Emittersaturationvoltage •Leadformedforsurfacemountapplications •HighDCcurrentgain •100tested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforgeneralpurposeamplifierandlowspee | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
D-PAK for Surface Mount Applications D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix) •ElectricallySimilartoPopularTIP127 •ComplementtoMJD122 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
PNP Silicon Darlington Transistor FEATURES •HighDCCurrentGain •ElectricallySimilartoPopularTIP127 •Built-inaDamperDiodeatE-C WedeclarethatthematerialofproductcompliancewithRoHSrequirements. | FS First Silicon Co., Ltd | | | |
TO-252-2L Plastic-Encapsulate Transistors FEATURES HighDCCurrentGain ElectricallySimilartoPopularTIP127 Built-inaDamperDiodeatE-C | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 |  | | |
Silicon PNP Power Transistor DESCRIPTION ·LowCollector-Emittersaturationvoltage ·Leadformedforsurfacemountapplications ·HighDCcurrentgain APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Silicon PNP Power Transistor DESCRIPTION ·LowCollector-Emittersaturationvoltage ·Leadformedforsurfacemountapplications ·HighDCcurrentgain APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
D-PAK for Surface Mount Applications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix) •ElectricallySimilartoPopularTIP127 •ComplementtoMJD122 | SYC SYC Electronica |  | | |
Complementary Darlington Power Transistors Features •D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications •ElectricallySimilartoPopularTIP122 •ComplementtoMJD127 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionAvailablein16mmTapeandReel(“T4”Suffix) •Sur | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
Silicon PNP Power Transistor DESCRIPTION ·LowCollector-Emittersaturationvoltage ·Leadformedforsurfacemountapplications ·HighDCcurrentgain APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Silicon PNP Power Transistor DESCRIPTION ·LowCollector-Emittersaturationvoltage ·Leadformedforsurfacemountapplications ·HighDCcurrentgain APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications | CDIL Continental Device India Limited | | | |
SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionAvailablein16mmTapeandReel(“T4”Suffix) •Sur | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | | | |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
COMPLEMENTARY POWER DARLINGTON TRANSISTORS DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
D-PAK for Surface Mount Applications D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix) •ElectricallySimilartoPopularTIP127 •ComplementtoMJD122 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Complementary Darlington Power Transistor ComplementaryDarlingtonPowerTransistor DPAKForSurfaceMountApplications Features Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. •MonolithicConstructionWithBuilt−inBase−EmitterShuntResistors •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc • | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
isc Silicon PNP Darlington Power Transistor DESCRIPTION •HighDCCurrentGain-:hFE=1000(Min)@IC=-4A •Collector-EmitterSustainingVoltage-:VCEO(SUS)=-120V(Min) •DPAKforSurfaceMountApplications •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •Designedforgeneralpurpo | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Silicon PNP Power Transistor DESCRIPTION ·HighDCCurrentGain- :hFE=1000(Min)@IC=-4A ·Collector-EmitterSustainingVoltage- :VCEO(SUS)=-120V(Min) APPLICATIONS ·Designedforgeneralpurposeamplifier andlowspeedswitchingapplications. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Complementary Darlington Power Transistor ComplementaryDarlingtonPowerTransistor DPAKForSurfaceMountApplications Features Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. •MonolithicConstructionWithBuilt−inBase−EmitterShuntResistors •HighDCCurrentGain−hFE=2500(Typ)@IC=4.0Adc • | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Complementary Darlington Power Transistor ComplementaryDarlingtonPowerTransistor DPAKForSurfaceMountApplications Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. Features •MonolithicConstructionWithBuilt−inBase−EmitterShuntResistors •HighDCCurrentGain:hFE=2500(Typ)@IC=4.0Adc •E | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
Silicon NPN epitaxial planerTransistors 文件：337.92 Kbytes Page：3 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | | |
MJD12产品属性
- 类型
描述
- 型号
MJD12
- 功能描述
达林顿晶体管 8A 100V Bipolar
- RoHS
否
- 制造商
Texas Instruments
- 配置
Octal
- 晶体管极性
NPN 集电极—发射极最大电压
- VCEO
50 V 发射极 - 基极电压
- VEBO
集电极—基极电压
- 最大直流电集电极电流
0.5 A
- 最大工作温度
+ 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOIC-18
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
TO252 |
55620 |
全新原装现货/假一罚百! |
|||
ON/安森美 |
23+ |
TO-252 |
15000 |
全新原装现货,价格优势 |
|||
ON/安森美 |
24+ |
TO252 |
33500 |
全新进口原装现货,假一罚十 |
|||
ST(意法) |
24+ |
TO-252-2(DPAK) |
12048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ONSEMI/安森美 |
25+ |
TO-252 |
45000 |
ONSEMI/安森美全新现货MJD122/MJD127即刻询购立享优惠#长期有排单订 |
|||
ON |
23+ |
DPAK |
56000 |
||||
ON |
2025+ |
TO-252-3 |
32560 |
原装优势绝对有货 |
|||
Onsemi/安森美 |
25+ |
TO-252 |
30000 |
||||
ON |
15+ |
原厂原装 |
10275 |
进口原装现货假一赔十 |
|||
ON(安森美) |
24+ |
TO-252-2(DPAK) |
8394 |
只做原装现货假一罚十!价格最低!只卖原装现货 |
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- MJD1121
- MJD112(-1,T4)
- MJD112
- MJ-BNCJ
- MJB6491
- MJB6488
- MJB42CG
- MJB42C
- MJB41CG
- MJB41C
- MJB32C
- MJB32B
- MJB31C
- MJB3055
- MJB2955
- MJ921
- MJ920
- MJ901
- MJ9000
- MJ900
- MJ8505
- MJ8400
- MJ8101
- MJ8100
- MJ802
- MJ7201
- MJ7200
- MJ7161
- MJ7160
- MJ7000
- MJ6701
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2019-11-1
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