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位置：首页 > IC中文资料 > MJD122

MJD122晶体管资料

  • MJD122别名：MJD122三极管、MJD122晶体管、MJD122晶体三极管

  • MJD122生产厂家：韩国三星公司

  • MJD122制作材料：Darl

  • MJD122性质：低频或音频放大 （LF）

  • MJD122封装形式：贴片封装

  • MJD122极限工作电压：

  • MJD122最大电流允许值：8A

  • MJD122最大工作频率：<1MHZ或未知

  • MJD122引脚数：3

  • MJD122最大耗散功率：20W

  • MJD122放大倍数：

  • MJD122图片代号：G-127

  • MJD122vtest：0

  • MJD122htest：999900

  • MJD122atest：8

  • MJD122wtest：20

  • MJD122代换 MJD122用什么型号代替：

MJD122价格

参考价格：￥2.0956

型号：MJD122-1 品牌：STMicroelectronics 备注：这里有MJD122多少钱，2026年最近7天走势，今日出价，今日竞价，MJD122批发/采购报价，MJD122行情走势销售排行榜，MJD122报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJD122

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

MOTOROLA

摩托罗拉

MJD122

Complementary Darlington Power Transistors

Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127

ONSEMI

安森美半导体

MJD122

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICS

意法半导体

MJD122

Complementary Darlington Power Transistors

Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127

FAIRCHILD

仙童半导体

MJD122

Silicon NPN epitaxial planer Transistors

Features • High DC Current Gain • Built-in a Damper Diode at E-C • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Infor

MCC

MJD122

TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR

Description Designed for use in general purpose amplifier and low speed switching applications.

DCCOM

道全

MJD122

NPN PLASTIC ENCAPSULATE TRANSISTORS

Features: * High DC current gain * Electrically similar to popular TIP122 * Built-in a damper diode at E-C

WEITRON

MJD122

isc Silicon NPN Darlington Power Transistor

DESCRIPTION · Low Collector-Emitter saturation voltage · Lead formed for surface mount applications · High DC current gain · 100 avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for general purpose amplifier and lo

ISC

无锡固电

MJD122

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Speed Switching Applications

CDIL

MJD122

TRANSISTOR(NPN)

TRANSISTOR（NPN） FEATURES ∙ High DC Current Gain ∙ Electrically Similar to Popular TIP122 ∙ Built-in a Damper Diode at E-C

JIANGSU

长电科技

MJD122

TO-252-2L P lastic-Encapsulate Transistors

TRANSISTOR（ NPN） Feature ● High DC Current Gain ● Electrically Similar to Popular TIP122 ● Built-in a Damper Diode at E-C

HDSEMI

海德半导体

MJD122

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Hammer Drivers,Audio Amplifiers Applications Power Linear and Switching Applications

TGS

MJD122

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Hammer Drivers,Audio Amplifiers Applications Power Linear and Switching Applications

TGS

MJD122

丝印代码：D-PAK；NPN Silicon Darlington Transistor

FEATURES • High DC Current Gain • Electrically Similar to Popular TIP122 • Built-in a Damper Diode at E-C We declare that the material of product compliance with RoHS requirements.

FS

MJD122

Silicon NPN Power Transistor

DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ISC

无锡固电

MJD122

Silicon NPN Power Transistor

DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ISC

无锡固电

MJD122

互补硅功率达林顿晶体管

The devices are manufactured in planar technology with \\\"base island\\\" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. • Low collector-emitter saturation voltage \n• Integrated antiparallel collector-emitter diode;

STMICROELECTRONICS

意法半导体

MJD122

中等功率双极型晶体管

MCC

MJD122

达林顿管

JSCJ

长晶科技

MJD122

isc Silicon NPN Darlington Power Transistor

文件：315.34 Kbytes Page：2 Pages

ISC

无锡固电

MJD122

Silicon NPN epitaxial planerTransistors

文件：337.92 Kbytes Page：3 Pages

MCC

MJD122

Complementary Darlington Power Transistor

文件：106.5 Kbytes Page：8 Pages

ONSEMI

安森美半导体

MJD122

Complementary Darlington Power Transistor

文件：136.31 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD122

Low voltage power Darlington transistor

文件：232.98 Kbytes Page：9 Pages

STMICROELECTRONICS

意法半导体

MJD122

Complementary Darlington Power Transistor

文件：87.53 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD122-1

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICS

意法半导体

MJD122-1

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICS

意法半导体

MJD122-1

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

MOTOROLA

摩托罗拉

MJD122-251

Silicon NPN Power Transistor

DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ISC

无锡固电

MJD122-252

Silicon NPN Power Transistor

DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ISC

无锡固电

MJD122I

NPN Silicon Darlington Transistor

FEATURES • High DC Current Gain • Electrically Similar to Popular TIP122 • Built-in a Damper Diode at E-C We declare that the material of product compliance with RoHS requirements.

FS

MJD122NPN

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Speed Switching Applications

CDIL

MJD122T4

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICS

意法半导体

MJD122T4

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

MOTOROLA

摩托罗拉

MJD122T4

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICS

意法半导体

MJD122-TP

Silicon NPN epitaxial planer Transistors

Features • High DC Current Gain • Built-in a Damper Diode at E-C • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Infor

MCC

MJD122_05

Complementary Darlington Power Transistor

文件：87.53 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD122_07

Low voltage power Darlington transistor

文件：232.98 Kbytes Page：9 Pages

STMICROELECTRONICS

意法半导体

MJD122_09

NPN Silicon Darlington Transistor

文件：157.4 Kbytes Page：5 Pages

FAIRCHILD

仙童半导体

MJD122_11

Complementary Darlington Power Transistor

文件：136.31 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD122_16

Silicon NPN epitaxial planerTransistors

文件：337.92 Kbytes Page：3 Pages

MCC

MJD122_16

Complementary Darlington Power Transistor

文件：106.5 Kbytes Page：8 Pages

ONSEMI

安森美半导体

MJD122_17

isc Silicon NPN Darlington Power Transistor

文件：315.34 Kbytes Page：2 Pages

ISC

无锡固电

MJD122-1G

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 100V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

MJD122G

Complementary Darlington Power Transistor

文件：106.5 Kbytes Page：8 Pages

ONSEMI

安森美半导体

MJD122G

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：散装 描述：TRANS NPN DARL 100V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

MJD122G

Complementary Darlington Power Transistor

文件：136.31 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD122G

Complementary Darlington Power Transistor

文件：87.53 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD122T4

Complementary Darlington Power Transistor

文件：87.53 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD122T4

Complementary Darlington Power Transistor

文件：136.31 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD122T4G

Complementary Darlington Power Transistor

文件：136.31 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD122T4G

Complementary Darlington Power Transistor

文件：87.53 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD122T4G

Complementary Darlington Power Transistor

文件：106.5 Kbytes Page：8 Pages

ONSEMI

安森美半导体

MF122

COMPLEMENTARY SILICON POWER DARLINGTONS

Complementary Power Darlingtons For Isolated Package Applications Designed for general–purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. • Electrically Similar to the Popular TIP122 and T

MOTOROLA

摩托罗拉

TIP122

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

MOSPEC

统懋

LM122

Precision Timers

文件：281.35 Kbytes Page：14 Pages

NSC

国半

LM122H

Precision Timers

文件：281.35 Kbytes Page：14 Pages

NSC

国半

MJD122产品属性

  • 类型

    描述

  • Pb-free：

    Pb

  • AEC Qualified：

    A

  • Halide free：

    H

  • PPAP Capablee：

    P

  • Status：

    Active

  • Polarity：

    NPN

  • IC Continuous (A)：

    8

  • V(BR)CEO Min (V)：

    100

  • VCE(sat) Max (V)：

    2

  • hFE Min (k)：

    1

  • hFE Max (k)：

    12

  • fT Min (MHz)：

    4

  • Package Type：

    DPAK-3

MJD122供应商更多...

更新时间：2026-5-13 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
MJD122TF
onsemi(安森美)
24+
TO-252
2317
原厂订货渠道,支持BOM配单一站式服务
询价
深圳诚思涵科技有限公司
MJD122DTT4
ST
24+
TO252
32350
深圳存库原装现货
询价
中天科工半导体（深圳）有限公司
MJD122/MJD127
ONSEMI/安森美
25+
TO-252
45000
ONSEMI/安森美全新现货MJD122/MJD127即刻询购立享优惠#长期有排单订
询价
深圳市联世界科技有限公司
MJD122T4G
ONSEMI/安森美
24+
TO-252
5000
原装现货可持续供货
询价
深圳市科恒伟业电子有限公司
MJD122
CJ
2450+
TO252
9850
只做原装正品现货或订货假一赔十!
询价
深圳市富利微电子科技有限公司
MJD122T4G
ON/安森美
25+
TO252
33500
全新进口原装现货,假一罚十
询价
深圳市拓亿芯电子有限公司
MJD122T4G
ON/安森美
25+
TO-252
15000
全新原装现货,价格优势
询价
瀚佳科技(深圳)有限公司
MJD122T4G
ON
24+
TO252
55620
全新原装现货/假一罚百!
询价
深圳市佳鑫美电子科技有限公司
MJD122T4
ST/意法半导体
25+
TO-252
4650
绝对原装公司现货
询价
深圳市天芯威科技有限公司
MJD122T4G
ON(安森美)
23+
25900
新到现货,只有原装
询价

MJD122芯片相关品牌

MJD122规格书下载地址

MJD122参数引脚图相关

MJD122数据表相关新闻

DdatasheetPDF页码索引

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