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位置：首页 > IC中文资料第2135页 > MJD122

MJD122晶体管资料

  • MJD122别名：MJD122三极管、MJD122晶体管、MJD122晶体三极管

  • MJD122生产厂家：韩国三星公司

  • MJD122制作材料：Darl

  • MJD122性质：低频或音频放大 （LF）

  • MJD122封装形式：贴片封装

  • MJD122极限工作电压：

  • MJD122最大电流允许值：8A

  • MJD122最大工作频率：<1MHZ或未知

  • MJD122引脚数：3

  • MJD122最大耗散功率：20W

  • MJD122放大倍数：

  • MJD122图片代号：G-127

  • MJD122vtest：0

  • MJD122htest：999900

  • MJD122atest：8

  • MJD122wtest：20

  • MJD122代换 MJD122用什么型号代替：

MJD122价格

参考价格：￥2.0956

型号：MJD122-1 品牌：STMicroelectronics 备注：这里有MJD122多少钱，2025年最近7天走势，今日出价，今日竞价，MJD122批发/采购报价，MJD122行情走势销售排行榜，MJD122报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MJD122

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola
MJD122

Complementary Darlington Power Transistors

Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD122

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD122

Complementary Darlington Power Transistors

Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJD122

TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR

Description Designed for use in general purpose amplifier and low speed switching applications.

DCCOM

Dc Components

DCCOM
MJD122

NPN PLASTIC ENCAPSULATE TRANSISTORS

Features: * High DC current gain * Electrically similar to popular TIP122 * Built-in a damper diode at E-C

WEITRON

Weitron Technology

WEITRON
MJD122

Silicon NPN epitaxial planer Transistors

Features • High DC Current Gain • Built-in a Damper Diode at E-C • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Infor

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
MJD122

isc Silicon NPN Darlington Power Transistor

DESCRIPTION · Low Collector-Emitter saturation voltage · Lead formed for surface mount applications · High DC current gain · 100 avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for general purpose amplifier and lo

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD122

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Speed Switching Applications

CDIL

Continental Device India Limited

CDIL
MJD122

TRANSISTOR(NPN)

TRANSISTOR（NPN） FEATURES ∙ High DC Current Gain ∙ Electrically Similar to Popular TIP122 ∙ Built-in a Damper Diode at E-C

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
MJD122

TO-252-2L P lastic-Encapsulate Transistors

TRANSISTOR（ NPN） Feature ● High DC Current Gain ● Electrically Similar to Popular TIP122 ● Built-in a Damper Diode at E-C

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI
MJD122

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Hammer Drivers,Audio Amplifiers Applications Power Linear and Switching Applications

TGS

Tiger Electronic Co.,Ltd

TGS
MJD122

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Hammer Drivers,Audio Amplifiers Applications Power Linear and Switching Applications

TGS

Tiger Electronic Co.,Ltd

TGS
MJD122

NPN Silicon Darlington Transistor

FEATURES • High DC Current Gain • Electrically Similar to Popular TIP122 • Built-in a Damper Diode at E-C We declare that the material of product compliance with RoHS requirements.

FS

First Silicon Co., Ltd

FS
MJD122

Silicon NPN Power Transistor

DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD122

Silicon NPN Power Transistor

DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD122

isc Silicon NPN Darlington Power Transistor

文件：315.34 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD122

Silicon NPN epitaxial planerTransistors

文件：337.92 Kbytes Page：3 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
MJD122

Complementary Darlington Power Transistor

文件：106.5 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD122

Complementary Darlington Power Transistor

文件：136.31 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD122

Complementary Darlington Power Transistor

文件：87.53 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD122

Low voltage power Darlington transistor

文件：232.98 Kbytes Page：9 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD122-1

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD122-1

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD122-1

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola
MJD122-251

Silicon NPN Power Transistor

DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD122-252

Silicon NPN Power Transistor

DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD122I

NPN Silicon Darlington Transistor

FEATURES • High DC Current Gain • Electrically Similar to Popular TIP122 • Built-in a Damper Diode at E-C We declare that the material of product compliance with RoHS requirements.

FS

First Silicon Co., Ltd

FS
MJD122NPN

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Speed Switching Applications

CDIL

Continental Device India Limited

CDIL
MJD122T4

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD122T4

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD122T4

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

Motorola
MJD122-TP

Silicon NPN epitaxial planer Transistors

Features • High DC Current Gain • Built-in a Damper Diode at E-C • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Infor

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
MJD122_05

Complementary Darlington Power Transistor

文件：87.53 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD122_07

Low voltage power Darlington transistor

文件：232.98 Kbytes Page：9 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STMICROELECTRONICS
MJD122_09

NPN Silicon Darlington Transistor

文件：157.4 Kbytes Page：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJD122_11

Complementary Darlington Power Transistor

文件：136.31 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD122_16

Complementary Darlington Power Transistor

文件：106.5 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD122_16

Silicon NPN epitaxial planerTransistors

文件：337.92 Kbytes Page：3 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC
MJD122_17

isc Silicon NPN Darlington Power Transistor

文件：315.34 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD122-1G

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 100V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD122G

Complementary Darlington Power Transistor

文件：106.5 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD122G

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：散装 描述：TRANS NPN DARL 100V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD122G

Complementary Darlington Power Transistor

文件：136.31 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD122G

Complementary Darlington Power Transistor

文件：87.53 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD122T4

Complementary Darlington Power Transistor

文件：87.53 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD122T4

Complementary Darlington Power Transistor

文件：136.31 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD122T4G

Complementary Darlington Power Transistor

文件：136.31 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD122T4G

Complementary Darlington Power Transistor

文件：87.53 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD122T4G

Complementary Darlington Power Transistor

文件：106.5 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
122

1 1/16

FEATURES • Gangable up to 6 sections • Extra taps on request • Bushing or servo mount types available • Ohmic value range: 5  up to 100 k • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半导体

Vishay
122

102/122 Series Circuit Board Mount Fuse Clips for 1/4” Diameter Fuses

文件：884.55 Kbytes Page：2 Pages

Littelfuselittelfuse

力特力特公司

Littelfuse
122.SA

General Purpose Tweezers

文件：3.67611 Mbytes Page：4 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2
122C

MAGNETIC-LATCHING

文件：131.84 Kbytes Page：3 Pages

TELEDYNETeledyne Technologies Incorporated

华特力科

TELEDYNE
122JE

Carbon Composition Molded OD/OF Series (5 Tol.) OA Series (10)

文件：124.92 Kbytes Page：1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

etc2

MJD122产品属性

  • 类型

    描述

  • 型号

    MJD122

  • 功能描述

    达林顿晶体管 8A 100V Bipolar

  • RoHS

    否

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

MJD122供应商更多...

更新时间：2025-8-5 18:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市科恒伟业电子有限公司
MJD122T4G
ON/安森美
21+
TO252
9800
只做原装正品假一赔十!正规渠道订货!
询价
深圳市拓亿芯电子有限公司
MJD122T4G
ON/安森美
23+
TO-252
15000
全新原装现货,价格优势
询价
深圳市讯顺达科技有限公司
MJD122T4G
ON
20+
TO-252
50000
全新原装公司现货
询价
深圳市赛尔通科技有限公司
MJD122T4G
ON
23+
DPAK
56000
询价
瀚佳科技(深圳)有限公司
MJD122T4G
ON
24+
TO252
55620
全新原装现货/假一罚百!
询价
深圳市能创芯电子科技有限公司
MJD122T4G
ON/安森美
23+
TO-252-3
12580
进口原装现货
询价
深圳市汇莱威科技有限公司
MJD122T4
ST/意法
24+
TO-252
504582
免费送样原盒原包现货一手渠道联系
询价
深圳市富利微电子科技有限公司
MJD122T4G
ON/安森美
24+
TO252
33500
全新进口原装现货,假一罚十
询价
深圳诚思涵科技有限公司
MJD122DTT4
ST
24+
TO252
32350
深圳存库原装现货
询价
深圳市得捷芯城科技有限公司
MJD122T4
ST(意法)
24+
TO-252-2(DPAK)
12048
原厂可订货,技术支持,直接渠道。可签保供合同
询价

MJD122芯片相关品牌

  • CHENDA
  • FRANCEJOINT
  • HARWIN
  • IRF
  • Ricoh
  • SCHURTER
  • Semikron
  • Sensata
  • SICK
  • SKYWORKS
  • TDK
  • TOCOS

MJD122规格书下载地址

MJD122参数引脚图相关

MJD122数据表相关新闻

DdatasheetPDF页码索引

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