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位置：首页 > IC中文资料第2135页 > MJD122

MJD122晶体管资料

  • MJD122别名：MJD122三极管、MJD122晶体管、MJD122晶体三极管

  • MJD122生产厂家：韩国三星公司

  • MJD122制作材料：Darl

  • MJD122性质：低频或音频放大 （LF）

  • MJD122封装形式：贴片封装

  • MJD122极限工作电压：

  • MJD122最大电流允许值：8A

  • MJD122最大工作频率：<1MHZ或未知

  • MJD122引脚数：3

  • MJD122最大耗散功率：20W

  • MJD122放大倍数：

  • MJD122图片代号：G-127

  • MJD122vtest：0

  • MJD122htest：999900

  • MJD122atest：8

  • MJD122wtest：20

  • MJD122代换 MJD122用什么型号代替：

MJD122价格

参考价格：￥2.0956

型号：MJD122-1 品牌：STMicroelectronics 备注：这里有MJD122多少钱，2025年最近7天走势，今日出价，今日竞价，MJD122批发/采购报价，MJD122行情走势销售排行榜，MJD122报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJD122

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

Motorola

摩托罗拉

MJD122

Complementary Darlington Power Transistors

Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127

ONSEMI

安森美半导体

MJD122

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICS

意法半导体

MJD122

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Speed Switching Applications

CDIL

MJD122

Complementary Darlington Power Transistors

Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MJD122

Silicon NPN epitaxial planer Transistors

Features • High DC Current Gain • Built-in a Damper Diode at E-C • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Infor

MCC

MJD122

TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR

Description Designed for use in general purpose amplifier and low speed switching applications.

DCCOM

道全

MJD122

NPN PLASTIC ENCAPSULATE TRANSISTORS

Features: * High DC current gain * Electrically similar to popular TIP122 * Built-in a damper diode at E-C

WEITRON

MJD122

isc Silicon NPN Darlington Power Transistor

DESCRIPTION · Low Collector-Emitter saturation voltage · Lead formed for surface mount applications · High DC current gain · 100 avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for general purpose amplifier and lo

ISC

无锡固电

MJD122

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Hammer Drivers,Audio Amplifiers Applications Power Linear and Switching Applications

TGS

MJD122

TRANSISTOR(NPN)

TRANSISTOR（NPN） FEATURES ∙ High DC Current Gain ∙ Electrically Similar to Popular TIP122 ∙ Built-in a Damper Diode at E-C

JIANGSU

长电科技

MJD122

TO-252-2L P lastic-Encapsulate Transistors

TRANSISTOR（ NPN） Feature ● High DC Current Gain ● Electrically Similar to Popular TIP122 ● Built-in a Damper Diode at E-C

HDSEMI

海德半导体

MJD122

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Hammer Drivers,Audio Amplifiers Applications Power Linear and Switching Applications

TGS

MJD122

NPN Silicon Darlington Transistor

FEATURES • High DC Current Gain • Electrically Similar to Popular TIP122 • Built-in a Damper Diode at E-C We declare that the material of product compliance with RoHS requirements.

FS

MJD122

Silicon NPN Power Transistor

DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ISC

无锡固电

MJD122

Silicon NPN Power Transistor

DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ISC

无锡固电

MJD122

中等功率双极型晶体管

MCC

MJD122

达林顿管

JSCJ

长晶科技

MJD122

互补硅功率达林顿晶体管

STMICROELECTRONICS

意法半导体

MJD122

Silicon NPN epitaxial planerTransistors

文件：337.92 Kbytes Page：3 Pages

MCC

MJD122

isc Silicon NPN Darlington Power Transistor

文件：315.34 Kbytes Page：2 Pages

ISC

无锡固电

MJD122

Complementary Darlington Power Transistor

文件：106.5 Kbytes Page：8 Pages

ONSEMI

安森美半导体

MJD122

Complementary Darlington Power Transistor

文件：136.31 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD122

Complementary Darlington Power Transistor

文件：87.53 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD122

Low voltage power Darlington transistor

文件：232.98 Kbytes Page：9 Pages

STMICROELECTRONICS

意法半导体

MJD122-1

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICS

意法半导体

MJD122-1

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICS

意法半导体

MJD122-1

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

Motorola

摩托罗拉

MJD122-251

Silicon NPN Power Transistor

DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ISC

无锡固电

MJD122-252

Silicon NPN Power Transistor

DESCRIPTION ·High DC current gain ·Lead formed for surface mount applications ·Built-in a damper diode at E-C ·Complementary Pairs Simplifies Designs APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ISC

无锡固电

MJD122I

NPN Silicon Darlington Transistor

FEATURES • High DC Current Gain • Electrically Similar to Popular TIP122 • Built-in a Damper Diode at E-C We declare that the material of product compliance with RoHS requirements.

FS

MJD122NPN

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Speed Switching Applications

CDIL

MJD122T4

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICS

意法半导体

MJD122T4

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICS

意法半导体

MJD122T4

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

Motorola

摩托罗拉

MJD122-TP

Silicon NPN epitaxial planer Transistors

Features • High DC Current Gain • Built-in a Damper Diode at E-C • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Infor

MCC

MJD122_05

Complementary Darlington Power Transistor

文件：87.53 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD122_07

Low voltage power Darlington transistor

文件：232.98 Kbytes Page：9 Pages

STMICROELECTRONICS

意法半导体

MJD122_09

NPN Silicon Darlington Transistor

文件：157.4 Kbytes Page：5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MJD122_11

Complementary Darlington Power Transistor

文件：136.31 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD122_16

Complementary Darlington Power Transistor

文件：106.5 Kbytes Page：8 Pages

ONSEMI

安森美半导体

MJD122_16

Silicon NPN epitaxial planerTransistors

文件：337.92 Kbytes Page：3 Pages

MCC

MJD122_17

isc Silicon NPN Darlington Power Transistor

文件：315.34 Kbytes Page：2 Pages

ISC

无锡固电

MJD122-1G

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 100V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

MJD122G

Complementary Darlington Power Transistor

文件：106.5 Kbytes Page：8 Pages

ONSEMI

安森美半导体

MJD122G

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：散装 描述：TRANS NPN DARL 100V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

MJD122G

Complementary Darlington Power Transistor

文件：136.31 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD122G

Complementary Darlington Power Transistor

文件：87.53 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD122T4

Complementary Darlington Power Transistor

文件：87.53 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD122T4

Complementary Darlington Power Transistor

文件：136.31 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD122T4G

Complementary Darlington Power Transistor

文件：136.31 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD122T4G

Complementary Darlington Power Transistor

文件：87.53 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD122T4G

Complementary Darlington Power Transistor

文件：106.5 Kbytes Page：8 Pages

ONSEMI

安森美半导体

122

1 1/16

FEATURES • Gangable up to 6 sections • Extra taps on request • Bushing or servo mount types available • Ohmic value range: 5  up to 100 k • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

VishayVishay Siliconix

威世科技

122

102/122 Series Circuit Board Mount Fuse Clips for 1/4” Diameter Fuses

文件：884.55 Kbytes Page：2 Pages

Littelfuse

力特

122.SA

General Purpose Tweezers

文件：3.67611 Mbytes Page：4 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

122C

MAGNETIC-LATCHING

文件：131.84 Kbytes Page：3 Pages

TELEDYNE

华特力科

122JE

Carbon Composition Molded OD/OF Series (5 Tol.) OA Series (10)

文件：124.92 Kbytes Page：1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

MJD122产品属性

  • 类型

    描述

  • 型号

    MJD122

  • 功能描述

    达林顿晶体管 8A 100V Bipolar

  • RoHS

    否

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

MJD122供应商更多...

更新时间：2025-9-26 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
MJD122TF
onsemi(安森美)
24+
TO-252
2317
原厂订货渠道,支持BOM配单一站式服务
询价
中天科工半导体（深圳）有限公司
MJD122/MJD127
ONSEMI/安森美
25+
TO-252
45000
ONSEMI/安森美全新现货MJD122/MJD127即刻询购立享优惠#长期有排单订
询价
深圳市科恒伟业电子有限公司
MJD122T4G
ON
2430+
TO252
8540
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市宝芯创电子有限公司
MJD122
CJ(江苏长电/长晶)
22+
TO-252-2(DPAK)
10000
只做原装,公司现货,提供一站式BO
询价
深圳市拓亿芯电子有限公司
MJD122T4G
ON/安森美
23+
TO-252
15000
全新原装现货,价格优势
询价
深圳市近平电子有限公司
MJD122
ON
15
ON
6000
原装正品现货
询价
深圳市汇莱威科技有限公司
MJD122T4
ST/意法
24+
TO-252
504582
免费送样原盒原包现货一手渠道联系
询价
深圳市得捷芯城科技有限公司
MJD122T4
ST(意法)
24+
TO-252-2(DPAK)
12048
原厂可订货,技术支持,直接渠道。可签保供合同
询价
深圳市云美电子科技有限公司
MJD122
CJ/长晶
24+
TO-252
29785
只做全新原装进口现货
询价
深圳市佳鑫美电子科技有限公司
MJD122T4
ST/意法半导体
25+
TO-252
4650
绝对原装公司现货
询价

MJD122芯片相关品牌

MJD122规格书下载地址

MJD122参数引脚图相关

MJD122数据表相关新闻

DdatasheetPDF页码索引

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