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MJD127晶体管资料

  • MJD127别名：MJD127三极管、MJD127晶体管、MJD127晶体三极管

  • MJD127生产厂家：韩国三星公司

  • MJD127制作材料：Darl

  • MJD127性质：低频或音频放大 （LF）

  • MJD127封装形式：贴片封装

  • MJD127极限工作电压：

  • MJD127最大电流允许值：8A

  • MJD127最大工作频率：<1MHZ或未知

  • MJD127引脚数：3

  • MJD127最大耗散功率：20W

  • MJD127放大倍数：

  • MJD127图片代号：G-127

  • MJD127vtest：0

  • MJD127htest：999900

  • MJD127atest：8

  • MJD127wtest：20

  • MJD127代换 MJD127用什么型号代替：

MJD127价格

参考价格：￥1.0028

型号：MJD127G 品牌：ON 备注：这里有MJD127多少钱，2026年最近7天走势，今日出价，今日竞价，MJD127批发/采购报价，MJD127行情走势销售排行榜，MJD127报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJD127

丝印代码：MJD127；TO-252-2L Plastic-Encapsulate Transistors

FEATURES High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C

DGNJDZ

南晶电子

MJD127

Silicon PNP Power Transistor

DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ISC

无锡固电

MJD127

Silicon PNP Power Transistor

DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ISC

无锡固电

MJD127

Silicon PNP epitaxial planer Transistors

Features • High DC Current Gain • Built-in a Damper Diode at E-C • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Infor

MCC

MJD127

D-PAK for Surface Mount Applications

• High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) • Electrically Similar to Popular TIP127 • Complement to MJD122

SYC

MJD127

8.0 A，100 V，PNP 达林顿双极功率晶体管

The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD122 (NPN) and MJD127 (PNP) are complementary devices. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)\n• Straight Lead Version in Plastic Sleeves (\"-1\" Suffix)\n• Lead Formed Version Available in 16 mm Tape and Reel (\"T4\" Suffix)\n• Surface Mount Replacements for 2N6040-2N6045 Series, TIP120-TIP122 Series, and TIP125-TIP;

ONSEMI

安森美半导体

MJD127

Complementary Darlington Power Transistors

Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127

ONSEMI

安森美半导体

MJD127

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICS

意法半导体

MJD127

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

MOTOROLA

摩托罗拉

MJD127

PNP (D-PACK FOR SURFACE MOUNT APPLICATIONS)

D▪PACK FOR SURFACE MOUNT APPLICATIONS • High DC Current Gain • Built-in a Damper Diode at E-C • Load Formed for Surface Mount Applications (No Suffix) • Stright Lead (I•PACK, -1 Suffix) • Electrically Similar to Popular TIP127

SAMSUNG

三星

MJD127

Complementary Darlington Power Transistors

Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127

FAIRCHILD

仙童半导体

MJD127

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Hammer Drivers,Audio Amplifiers Applications Power Linear and Switching Applications

TGS

MJD127

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES ● High DC Current Gain ● Electrically Similar to Popular TIP127 ● Built-in a Damper Diode at E-C

JIANGSU

长电科技

MJD127

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Speed Switching Applications

CDIL

MJD127

TO-252-2L P lastic-Encapsulate Transistors

TRANSISTOR (PNP) Feature ● High DC Current Gain ● Electrically Similar to Popular TIP127 ● Built-in a Damper Diode at E-C

HDSEMI

海德半导体

MJD127

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Low Collector-Emitter saturation voltage • Lead formed for surface mount applications • High DC current gain • 100 tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for general purpose amplifier and low spee

ISC

无锡固电

MJD127

D-PAK for Surface Mount Applications

D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) • Electrically Similar to Popular TIP127 • Complement to MJD122

FAIRCHILD

仙童半导体

MJD127

丝印代码：D-PAK；PNP Silicon Darlington Transistor

FEATURES • High DC Current Gain • Electrically Similar to Popular TIP127 • Built-in a Damper Diode at E-C We declare that the material of product compliance with RoHS requirements.

FS

MJD127

Complementary Darlington Power Transistor

文件：136.31 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD127

Complementary Darlington Power Transistor

文件：87.53 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD127

Silicon PNP epitaxial planer Transistors

文件：373.76 Kbytes Page：3 Pages

MCC

MJD127

中等功率双极型晶体管

MCC

MJD127

达林顿管

JSCJ

长晶科技

MJD127

isc Silicon PNP Darlington Power Transistor

文件：317.91 Kbytes Page：2 Pages

ISC

无锡固电

MJD127-1

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

MOTOROLA

摩托罗拉

MJD127-1

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICS

意法半导体

MJD127-1

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICS

意法半导体

MJD127-251

Silicon PNP Power Transistor

DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ISC

无锡固电

MJD127-252

Silicon PNP Power Transistor

DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ISC

无锡固电

MJD127PNP

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Speed Switching Applications

CDIL

MJD127T4

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

MOTOROLA

摩托罗拉

MJD127T4

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICS

意法半导体

MJD127T4

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICS

意法半导体

MJD127TF

D-PAK for Surface Mount Applications

D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) • Electrically Similar to Popular TIP127 • Complement to MJD122

FAIRCHILD

仙童半导体

MJD127_13

Silicon PNP epitaxial planer Transistors

文件：373.76 Kbytes Page：3 Pages

MCC

MJD127_17

isc Silicon PNP Darlington Power Transistor

文件：317.91 Kbytes Page：2 Pages

ISC

无锡固电

MJD127G

Complementary Darlington Power Transistor

文件：87.53 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD127G

Complementary Darlington Power Transistor

文件：136.31 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD127G

Complementary Darlington Power Transistor

文件：106.5 Kbytes Page：8 Pages

ONSEMI

安森美半导体

MJD127RLG

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：TRANS PNP DARL 100V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

MJD127S-TP

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：TRANS PNP 100V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

MCC

MJD127T4

Complementary Darlington Power Transistor

文件：87.53 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD127T4

Complementary Darlington Power Transistor

文件：136.31 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD127T4G

Complementary Darlington Power Transistor

文件：136.31 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD127T4G

Complementary Darlington Power Transistor

文件：106.5 Kbytes Page：8 Pages

ONSEMI

安森美半导体

MJD127T4G

Complementary Darlington Power Transistor

文件：87.53 Kbytes Page：7 Pages

ONSEMI

安森美半导体

BY127M

PLASTIC SILICON RECTIFIER(VOLTAGE - 1250 to 1600 Volts CURRENT - 1.0 Ampere)

PLASTIC SILICON RECTIFIERS VOLTAGE 1250 to 1600 Volts CURRENT 1.0 Ampere FEATURES • Low forward voltage drop • High current capability • High reliability • High surge current capability • Exceeds environmental standards of MIL-S-19500/228 • In compliance with EU RoHS 2002

PANJIT

強茂

NTE127

Germanium PNP Transistor Horizontal Output Amplifier

Germanium PNP Transistor Horizontal Output Amplifier

NTE

TIP127

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

MOTOROLA

摩托罗拉

MA127

Silicon epitaxial planar type

文件：49.21 Kbytes Page：2 Pages

PANASONIC

松下

MJD127产品属性

  • 类型

    描述

  • Marketing Status：

    Active

  • Grade：

    Industrial

  • Transistor Polarity：

    PNP

  • Collector-Emitter Voltage_max(V)：

    100

  • Collector-Base Voltage_max(V)：

    100

  • Collector Current_abs_max(A)：

    5

  • Dc Current Gain_min：

    1000

  • Dc Current Gain_max：

    12000

  • Test Condition for hFE (IC)：

    4

  • Test Condition for hFE (VCE)_spec(V)：

    4

  • VCE(sat)_max(V)：

    2

  • Test Condition for VCE(sat) - IC：

    4

  • Test Condition for VCE(sat) - IB_spec(mA)：

    16

MJD127供应商更多...

更新时间：2026-5-14 16:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳诚思涵科技有限公司
MJD127G
ON
24+
TO252
32350
深圳存库原装现货
询价
深圳市豪迈兴电子有限公司
MJD127T4G
ST(意法)
24+
5131
只做原装现货假一罚十!价格最低!只卖原装现货
询价
深圳市佳鑫美电子科技有限公司
MJD127T4
ST/意法半导体
25+
TO-252
4650
绝对原装公司现货
询价
深圳市得捷芯城科技有限公司
MJD127T4
ST(意法)
25+
TO-252-2(DPAK)
12421
原装正品现货,原厂订货,可支持含税原型号开票。
询价
深圳市盈慧通电子有限公司
MJD127T4G
ON(安森美)
2511
TO-252-2(DPAK)
5904
电子元器件采购降本 30%!公司原厂直采,砍掉中间差价
询价
深圳市鸿昌盛电子科技有限公司
MJD127
25+
100
公司现货库存
询价
瀚佳科技(深圳)有限公司
MJD127T4G
ON
24+
TO-252
98500
全新原装现货/假一罚百!
询价
深圳市赛尔通科技有限公司
MJD127T4G
ON
23+
DPAK
56000
询价
深圳市明盛嘉电子科技有限公司
MJD127T4MOS(场效应管)
ST/意法
26+
TO252
46780
全新原装现货,假一赔十,支持检测
询价
深圳市芯球通科技有限公司
MJD127G
ON(安森美)
23+
TO-252-2(DPAK)
11064
公司只做原装正品,假一赔十
询价

MJD127芯片相关品牌

MJD127规格书下载地址

MJD127参数引脚图相关

MJD127数据表相关新闻

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