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位置：首页 > IC中文资料第129页 > MJD127

MJD127晶体管资料

  • MJD127别名：MJD127三极管、MJD127晶体管、MJD127晶体三极管

  • MJD127生产厂家：韩国三星公司

  • MJD127制作材料：Darl

  • MJD127性质：低频或音频放大 （LF）

  • MJD127封装形式：贴片封装

  • MJD127极限工作电压：

  • MJD127最大电流允许值：8A

  • MJD127最大工作频率：<1MHZ或未知

  • MJD127引脚数：3

  • MJD127最大耗散功率：20W

  • MJD127放大倍数：

  • MJD127图片代号：G-127

  • MJD127vtest：0

  • MJD127htest：999900

  • MJD127atest：8

  • MJD127wtest：20

  • MJD127代换 MJD127用什么型号代替：

MJD127价格

参考价格：￥1.0028

型号：MJD127G 品牌：ON 备注：这里有MJD127多少钱，2025年最近7天走势，今日出价，今日竞价，MJD127批发/采购报价，MJD127行情走势销售排行榜，MJD127报价。
型号 功能描述 生产厂家 企业 LOGO 操作
MJD127

Complementary Darlington Power Transistors

Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MJD127

D-PAK for Surface Mount Applications

D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) • Electrically Similar to Popular TIP127 • Complement to MJD122

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MJD127

Complementary Darlington Power Transistors

Features • D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127

ONSEMI

安森美半导体

MJD127

PNP (D-PACK FOR SURFACE MOUNT APPLICATIONS)

D▪PACK FOR SURFACE MOUNT APPLICATIONS • High DC Current Gain • Built-in a Damper Diode at E-C • Load Formed for Surface Mount Applications (No Suffix) • Stright Lead (I•PACK, -1 Suffix) • Electrically Similar to Popular TIP127

Samsung

三星

MJD127

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Speed Switching Applications

CDIL

MJD127

Silicon PNP epitaxial planer Transistors

Features • High DC Current Gain • Built-in a Damper Diode at E-C • Halogen Free Available Upon Request By Adding Suffix -HF • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Infor

MCC

MJD127

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

Motorola

摩托罗拉

MJD127

Silicon PNP Power Transistor

DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ISC

无锡固电

MJD127

Silicon PNP Power Transistor

DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ISC

无锡固电

MJD127

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES ● High DC Current Gain ● Electrically Similar to Popular TIP127 ● Built-in a Damper Diode at E-C

JIANGSU

长电科技

MJD127

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Hammer Drivers,Audio Amplifiers Applications Power Linear and Switching Applications

TGS

MJD127

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Low Collector-Emitter saturation voltage • Lead formed for surface mount applications • High DC current gain • 100 tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for general purpose amplifier and low spee

ISC

无锡固电

MJD127

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICS

意法半导体

MJD127

TO-252-2L Plastic-Encapsulate Transistors

FEATURES High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C

DGNJDZ

南晶电子

MJD127

TO-252-2L P lastic-Encapsulate Transistors

TRANSISTOR (PNP) Feature ● High DC Current Gain ● Electrically Similar to Popular TIP127 ● Built-in a Damper Diode at E-C

HDSEMI

海德半导体

MJD127

PNP Silicon Darlington Transistor

FEATURES • High DC Current Gain • Electrically Similar to Popular TIP127 • Built-in a Damper Diode at E-C We declare that the material of product compliance with RoHS requirements.

FS

MJD127

D-PAK for Surface Mount Applications

• High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) • Electrically Similar to Popular TIP127 • Complement to MJD122

SYC

MJD127

isc Silicon PNP Darlington Power Transistor

文件：317.91 Kbytes Page：2 Pages

ISC

无锡固电

MJD127

中等功率双极型晶体管

MCC

MJD127

达林顿管

JSCJ

长晶科技

MJD127

8.0 A，100 V，PNP 达林顿双极功率晶体管

ONSEMI

安森美半导体

MJD127

Silicon PNP epitaxial planer Transistors

文件：373.76 Kbytes Page：3 Pages

MCC

MJD127

Complementary Darlington Power Transistor

文件：136.31 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD127

Complementary Darlington Power Transistor

文件：87.53 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD127-1

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

Motorola

摩托罗拉

MJD127-1

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICS

意法半导体

MJD127-1

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICS

意法半导体

MJD127-251

Silicon PNP Power Transistor

DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ISC

无锡固电

MJD127-252

Silicon PNP Power Transistor

DESCRIPTION ·Low Collector-Emitter saturation voltage ·Lead formed for surface mount applications ·High DC current gain APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

ISC

无锡固电

MJD127PNP

COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS

Designed for General Purpose Amplifier and Low Speed Switching Applications

CDIL

MJD127T4

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICS

意法半导体

MJD127T4

COMPLEMENTARY POWER DARLINGTON TRANSISTORS

DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epitaxial Base technology for cost-effective performance. ■ STMicroelectronics PREFERRED SALESTYPES ■ LOW BASE-DRIVE REQUIREMENTS ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE ■ THROUGH HOLE T

STMICROELECTRONICS

意法半导体

MJD127T4

SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT

Designed for general purpose amplifier and low speed switching applications. • Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“–1” Suffix) • Lead Formed Version Available in 16 mm Tape and Reel (“T4” Suffix) • Sur

Motorola

摩托罗拉

MJD127TF

D-PAK for Surface Mount Applications

D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications (No Suffix) • Straight Lead (I-PAK, “ - I “ Suffix) • Electrically Similar to Popular TIP127 • Complement to MJD122

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

MJD127_13

Silicon PNP epitaxial planer Transistors

文件：373.76 Kbytes Page：3 Pages

MCC

MJD127_17

isc Silicon PNP Darlington Power Transistor

文件：317.91 Kbytes Page：2 Pages

ISC

无锡固电

MJD127G

Complementary Darlington Power Transistor

文件：136.31 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD127G

Complementary Darlington Power Transistor

文件：87.53 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD127G

Complementary Darlington Power Transistor

文件：106.5 Kbytes Page：8 Pages

ONSEMI

安森美半导体

MJD127RLG

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：TRANS PNP DARL 100V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMI

安森美半导体

MJD127S-TP

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：TRANS PNP 100V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

MCC

MJD127T4

Complementary Darlington Power Transistor

文件：87.53 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD127T4

Complementary Darlington Power Transistor

文件：136.31 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD127T4G

Complementary Darlington Power Transistor

文件：136.31 Kbytes Page：7 Pages

ONSEMI

安森美半导体

MJD127T4G

Complementary Darlington Power Transistor

文件：106.5 Kbytes Page：8 Pages

ONSEMI

安森美半导体

MJD127T4G

Complementary Darlington Power Transistor

文件：87.53 Kbytes Page：7 Pages

ONSEMI

安森美半导体

127

Ultra High Frequency Transistor Arrays

文件：298.68 Kbytes Page：13 Pages

Intersil

127

Heavy Duty Male Blades for Range and Dryer

文件：318.74 Kbytes Page：2 Pages

HeycoHeyco.

海科

127CTA-R

CRIMP TERMINAL

文件：71.3 Kbytes Page：1 Pages

ADAM-TECH

亚当科技

127-PAD

Heavy Duty Male Blades for Range and Dryer

文件：318.74 Kbytes Page：2 Pages

HeycoHeyco.

海科

127SHQ-XX-TS-SMT-TR

PITCH HEADER

文件：83.22 Kbytes Page：1 Pages

ADAM-TECH

亚当科技

MJD127产品属性

  • 类型

    描述

  • 型号

    MJD127

  • 功能描述

    达林顿晶体管 8A 100V Bipolar

  • RoHS

    否

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

MJD127供应商更多...

更新时间：2025-9-16 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市高捷芯城科技有限公司
MJD127TF
onsemi(安森美)
24+
TO-252
2317
原厂订货渠道,支持BOM配单一站式服务
询价
深圳市粤骏腾电子科技有限公司
MJD127
24+
TO-252
110
大批量供应优势库存热卖
询价
中天科工半导体（深圳）有限公司
MJD127T4G
ONSEMI/安森美
25+
TO-252
32000
ONSEMI/安森美全新特价MJD127T4G即刻询购立享优惠#长期有货
询价
深圳市科恒伟业电子有限公司
MJD127T4G
ON/安森美
2450+
TO-252
9850
只做原装正品现货或订货假一赔十!
询价
深圳市联世界科技有限公司
MJD127
ON
24+/25+
338
原装正品现货库存价优
询价
深圳市威雅利发展有限公司
MJD127
长电
2021
TO-252
113685
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市凌旭科技有限公司
MJD127
CJ/长电
21+
TO-252
1062
只做原装正品,不止网上数量,欢迎电话微信查询!
询价
深圳市福田区绿盛电子商行
MJD127
ON
2018+
26976
代理原装现货/特价热卖!
询价
深圳市拓亿芯电子有限公司
MJD127
长电
23+
TO-252-2L
30000
代理全新原装现货,价格优势
询价
深圳市卓越微芯电子有限公司
MJD127
长电
25+
TO-252
10000
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价

MJD127芯片相关品牌

MJD127规格书下载地址

MJD127参数引脚图相关

MJD127数据表相关新闻

DdatasheetPDF页码索引

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