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位置：首页 > IC中文资料第129页 > MJD127

MJD127晶体管资料

  • MJD127别名：MJD127三极管、MJD127晶体管、MJD127晶体三极管

  • MJD127生产厂家：韩国三星公司

  • MJD127制作材料：Darl

  • MJD127性质：低频或音频放大 （LF）

  • MJD127封装形式：贴片封装

  • MJD127极限工作电压：

  • MJD127最大电流允许值：8A

  • MJD127最大工作频率：<1MHZ或未知

  • MJD127引脚数：3

  • MJD127最大耗散功率：20W

  • MJD127放大倍数：

  • MJD127图片代号：G-127

  • MJD127vtest：0

  • MJD127htest：999900

  • MJD127atest：8

  • MJD127wtest：20

  • MJD127代换 MJD127用什么型号代替：

MJD127价格

参考价格：￥1.0028

型号：MJD127G 品牌：ON 备注：这里有MJD127多少钱，2024年最近7天走势，今日出价，今日竞价，MJD127批发/采购报价，MJD127行情走势销售排行榜，MJD127报价。
型号 功能描述 生产厂家&企业 LOGO 操作
MJD127

ComplementaryDarlingtonPowerTransistors

Features •D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications •ElectricallySimilartoPopularTIP122 •ComplementtoMJD127

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD127

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
MJD127

SILICONPOWERTRANSISTORS8AMPERES100VOLTS20WATT

Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionAvailablein16mmTapeandReel(“T4”Suffix) •Sur

MotorolaMotorola, Inc

摩托罗拉

Motorola
MJD127

PNP(D-PACKFORSURFACEMOUNTAPPLICATIONS)

D▪PACKFORSURFACEMOUNTAPPLICATIONS •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LoadFormedforSurfaceMountApplications(NoSuffix) •StrightLead(I•PACK,-1Suffix) •ElectricallySimilartoPopularTIP127

SamsungSamsung Group

三星三星半导体

Samsung
MJD127

ComplementaryDarlingtonPowerTransistors

Features •D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications •ElectricallySimilartoPopularTIP122 •ComplementtoMJD127

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJD127

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS HammerDrivers,AudioAmplifiersApplications PowerLinearandSwitchingApplications

TGS

Tiger Electronic Co.,Ltd

TGS
MJD127

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES ●HighDCCurrentGain ●ElectricallySimilartoPopularTIP127 ●Built-inaDamperDiodeatE-C

JIANGSU

Jiangsu Changjiang Electronics Technology Co., Ltd

JIANGSU
MJD127

COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS

DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications

CDIL

CDIL

CDIL
MJD127

SiliconPNPepitaxialplanerTransistors

Features •HighDCCurrentGain •Built-inaDamperDiodeatE-C •HalogenFreeAvailableUponRequestByAddingSuffix-HF •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInfor

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
MJD127

TO-252-2LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) Feature ●HighDCCurrentGain ●ElectricallySimilartoPopularTIP127 ●Built-inaDamperDiodeatE-C

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI
MJD127

iscSiliconPNPDarlingtonPowerTransistor

DESCRIPTION •LowCollector-Emittersaturationvoltage •Leadformedforsurfacemountapplications •HighDCcurrentgain •100tested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforgeneralpurposeamplifierandlowspee

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD127

D-PAKforSurfaceMountApplications

D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix) •ElectricallySimilartoPopularTIP127 •ComplementtoMJD122

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJD127

PNPSiliconDarlingtonTransistor

FEATURES •HighDCCurrentGain •ElectricallySimilartoPopularTIP127 •Built-inaDamperDiodeatE-C WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

FS

First Silicon Co., Ltd

FS
MJD127

TO-252-2LPlastic-EncapsulateTransistors

FEATURES HighDCCurrentGain ElectricallySimilartoPopularTIP127 Built-inaDamperDiodeatE-C

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
MJD127

ComplementaryDarlingtonPowerTransistor

文件：136.31 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD127

SiliconPNPepitaxialplanerTransistors

文件：373.76 Kbytes Page：3 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
MJD127

iscSiliconPNPDarlingtonPowerTransistor

文件：317.91 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD127

ComplementaryDarlingtonPowerTransistor

文件：87.53 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD127-1

COMPLEMENTARYPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
MJD127-1

COMPLEMENTARYPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
MJD127-1

SILICONPOWERTRANSISTORS8AMPERES100VOLTS20WATT

Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionAvailablein16mmTapeandReel(“T4”Suffix) •Sur

MotorolaMotorola, Inc

摩托罗拉

Motorola
MJD127PNP

COMPLEMENTARYDARLINGTONPLASTICPOWERTRANSISTORS

DesignedforGeneralPurposeAmplifierandLowSpeedSwitchingApplications

CDIL

CDIL

CDIL
MJD127T4

SILICONPOWERTRANSISTORS8AMPERES100VOLTS20WATT

Designedforgeneralpurposeamplifierandlowspeedswitchingapplications. •LeadFormedforSurfaceMountApplicationsinPlasticSleeves(NoSuffix) •StraightLeadVersioninPlasticSleeves(“–1”Suffix) •LeadFormedVersionAvailablein16mmTapeandReel(“T4”Suffix) •Sur

MotorolaMotorola, Inc

摩托罗拉

Motorola
MJD127T4

COMPLEMENTARYPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
MJD127T4

COMPLEMENTARYPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheMJD122andMJD127formcomplementaryNPN-PNPpair.TheyaremanufacturedusingEpitaxialBasetechnologyforcost-effectiveperformance. ■STMicroelectronicsPREFERREDSALESTYPES ■LOWBASE-DRIVEREQUIREMENTS ■INTEGRATEDANTIPARALLELCOLLECTOR-EMITTERDIODE ■THROUGHHOLET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体（ST）集团

STMICROELECTRONICS
MJD127TF

D-PAKforSurfaceMountApplications

D-PAKforSurfaceMountApplications •HighDCCurrentGain •Built-inaDamperDiodeatE-C •LeadFormedforSurfaceMountApplications(NoSuffix) •StraightLead(I-PAK,“-I“Suffix) •ElectricallySimilartoPopularTIP127 •ComplementtoMJD122

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
MJD127_13

SiliconPNPepitaxialplanerTransistors

文件：373.76 Kbytes Page：3 Pages

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
MJD127_17

iscSiliconPNPDarlingtonPowerTransistor

文件：317.91 Kbytes Page：2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
MJD127G

ComplementaryDarlingtonPowerTransistor

文件：87.53 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD127G

ComplementaryDarlingtonPowerTransistor

文件：136.31 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD127G

ComplementaryDarlingtonPowerTransistor

文件：106.5 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD127RLG

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：TRANS PNP DARL 100V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD127S-TP

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：卷带（TR） 描述：TRANS PNP 100V 8A DPAK 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

MCCMicro Commercial Components

美微科美微科半导体公司

MCC
MJD127T4

ComplementaryDarlingtonPowerTransistor

文件：136.31 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD127T4

ComplementaryDarlingtonPowerTransistor

文件：87.53 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD127T4G

ComplementaryDarlingtonPowerTransistor

文件：136.31 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD127T4G

ComplementaryDarlingtonPowerTransistor

文件：106.5 Kbytes Page：8 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
MJD127T4G

ComplementaryDarlingtonPowerTransistor

文件：87.53 Kbytes Page：7 Pages

ONSEMION Semiconductor

安森美半导体安森美半导体公司

ONSEMI
AC127

GERMANIUMSMALLSIGNALTRANSISTORS

[GermaniumPowerDevicesCorporation] GERMANIUMSMALLSIGNALTRANSISTORS PROELECTRONTYPES

ETC1List of Unclassifed Manufacturers

未分类制造商

ETC1
127

UltraHighFrequencyTransistorArrays

文件：298.68 Kbytes Page：13 Pages

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
127CTA-R

CRIMPTERMINAL

文件：71.3 Kbytes Page：1 Pages

ADAM-TECHAdam Technologies, Inc.

亚当科技亚当科技股份有限公司

ADAM-TECH
127SHQ-XX-TS-SMT-TR

PITCHHEADER

文件：83.22 Kbytes Page：1 Pages

ADAM-TECHAdam Technologies, Inc.

亚当科技亚当科技股份有限公司

ADAM-TECH
127Z

UltraHighFrequencyTransistorArrays

文件：298.68 Kbytes Page：13 Pages

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

MJD127产品属性

  • 类型

    描述

  • 型号

    MJD127

  • 功能描述

    达林顿晶体管 8A 100V Bipolar

  • RoHS

    否

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶体管极性

    NPN 集电极—发射极最大电压

  • VCEO

    50 V 发射极 - 基极电压

  • VEBO

    集电极—基极电压

  • 最大直流电集电极电流

    0.5 A

  • 最大工作温度

    + 150 C

  • 安装风格

    SMD/SMT

  • 封装/箱体

    SOIC-18

  • 封装

    Reel

MJD127供应商更多...

更新时间：2024-5-1 10:18:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市龙瀚电子有限公司
MJD127T4G
ON
16+/17+
TO-252
3500
原装正品现货供应56
询价
深圳市艾宇特电子科技有限公司
MJD127T4MOS()
ST/意法
21+
TO252
9852
只做原装正品假一赔十!正规渠道订货!
询价
深圳市东来宝电子科技有限公司
MJD127
CJ/长电
22+
TO-252
75000
郑重承诺只做原装进口现货
询价
深圳市汇莱威科技有限公司
MJD127
CJ/长晶
TO252
7906200
询价
中天科工半导体（深圳）有限公司
MJD127RLG
onsemi
23+
TO-252-3,DPak(2 引线 + 接片
30000
晶体管-分立半导体产品-原装正品
询价
深圳市福田区晶康业电子商行
MJD127T4G
ON
20+
SOT252
32010
全新原装,价格优势
询价
天津市博通航睿技术有限公司
MJD127T4G
Onsemi
22+
TO-252-2
8000
原装现货,有单必成
询价
深圳市讯顺达科技有限公司
MJD127T4G
ONSemi
2146
DPAK
12544
全新原装公司现货
询价
海芯未来半导体电子（深圳）有限公司
MJD127T4G
ON
1414+
DPAK
14950
询价
瀚佳科技(深圳)有限公司
MJD127T4G
ON
18+
TO-252
98500
全新原装现货/假一罚百!
询价

MJD127芯片相关品牌

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MJD127规格书下载地址

MJD127参数引脚图相关

MJD127数据表相关新闻

DdatasheetPDF页码索引

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